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STMicroelectronics STF2N80K5
- Part No.:
- STF2N80K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF2N80K5.pdf
- Description:
- MOSFET N-CH 800V 2A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:846
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Product details
Overview
STF2N80K5 from STMicroelectronics is an N-channel 800 V, 4.5 Ω (max) power MOSFET in TO-220FP package, featuring ultra-low gate charge (5 nC), 100% avalanche tested operation, and Zener-protected gate. It delivers high-voltage switching capability with industry-leading RDS(on) × area and FoM for compact, high-efficiency SMPS and industrial converters.
For engineers reviewing the STF2N80K5 datasheet, STF2N80K5 pinout, STF2N80K5 application, or STF2N80K5 equivalent, key selection criteria include its 800 V VDS, 2 A continuous drain current at 25 °C, 6.25 °C/W RthJC, 60.5 mJ EAS, and dv/dt ruggedness up to 50 V/ns - critical for flyback, PFC, and HV DC-DC designs.
Technical Context
This MDmesh K5 device uses a proprietary vertical structure to minimize conduction and switching losses simultaneously. Its 3.5 Ω typical RDS(on) at VGS = 10 V and low Ciss (105 pF) enable high-frequency operation while maintaining robust unclamped inductive switching performance.
The integrated source-drain diode exhibits 255 ns trr at 25 °C and 285 ns at 150 °C, with 1 µC Qrr, supporting efficient quasi-resonant and hard-switched topologies. Insulation withstand voltage of 2.5 kV RMS ensures safe isolation between leads and heatsink in grounded-chassis systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports primary-side switching in universal-input offline SMPS up to 400 V AC mains with margin |
| RDS(on) max | 4.5 Ω - defines conduction loss at 1 A; enables <1 W I²R loss in 25 °C ambient with minimal heatsinking |
| Qg | 5 nC - reduces gate drive power and enables use of low-current drivers in high-frequency (>100 kHz) converters |
| EAS | 60.5 mJ - guarantees single-pulse avalanche survival under worst-case turn-off overvoltage in inductive loads |
| dv/dt ruggedness | 50 V/ns - prevents spurious turn-on during fast voltage transients in bridge-leg or phase-leg configurations |
| RthJC | 6.25 °C/W - allows 20 W dissipation with ≤125 °C junction rise above case, suitable for forced-air or moderate heatsink use |
| VGS(th) | 3–5 V - ensures reliable enhancement-mode turn-on with standard 5 V or 10 V logic-level gate drivers |
Pinout & Package
TO-220FP (Type B) package: insulated tab, vertical mounting, single-row 3-pin outline with integral heatsink interface. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Tab is electrically connected to Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate control terminal | Receives 10 V drive to fully enhance; requires <5 nC charge for full transition; Zener-protected against ±30 V transients |
| Pin 2 (D) | Drain (high-side switch node) | Connected to insulated metal tab; rated for 800 V blocking; carries full load current and avalanche energy during fault |
| Pin 3 (S) | Source (power return path) | Reference for gate drive; forms common node with internal body diode cathode; ties to PCB ground plane or low-side switch |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh K5 vertical structure | Reduces RDS(on) × die area by >30% vs prior K3/K4 generations, enabling smaller footprint in HV converters |
| Ultra-low gate charge | 5 nC total charge minimizes driver loss and EMI during switching transitions in 65–300 kHz applications |
| 100% avalanche tested | Every unit validated for 0.5 A repetitive avalanche current and 60.5 mJ single-pulse energy per DS14533 |
| Zener-protected gate | Integrated gate oxide protection clamps VGS to ±30 V, eliminating need for external gate Zener in most designs |
| High dv/dt ruggedness | 50 V/ns rating ensures immunity to false triggering in half-bridge or LLC resonant converter high-side operation |
Applications
| Industrial Flyback Converters | AC-DC Adapters (Universal Input) |
|---|---|
|
Use Scenario: Primary-side switch in 30–65 W offline flyback converters for industrial HMIs and PLC power supplies. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC link; operates at 65–130 kHz with zero-voltage switching assist. Use Value: 800 V rating provides 2× safety margin over 400 V DC bus; 60.5 mJ EAS sustains repeated line surges without failure. |
Use Scenario: Main switch in compact 24 W universal-input (90–264 V AC) wall adapters for medical and test equipment. IC Role / Device Role / Timing Role: Energy-transfer switch in discontinuous conduction mode (DCM); gate driven by PWM controller with 5 nC Qg compatibility. Use Value: 4.5 Ω RDS(on) limits conduction loss to <0.5 W at full load; TO-220FP insulation enables direct heatsink mounting without isolation pads. |
| Active PFC Boost Stages | High-Voltage DC-DC Isolated Converters |
|
Use Scenario: Switching element in continuous conduction mode (CCM) boost PFC stage for 110–250 V AC input, 380 V DC output. IC Role / Device Role / Timing Role: Fast-turning high-side switch synchronized to line frequency; handles 2 A average current with 8 A pulsed peak. Use Value: 255 ns trr and 1 µC Qrr reduce diode recovery loss and EMI; 50 V/ns dv/dt rating prevents shoot-through in interleaved designs. |
Use Scenario: Primary switch in 400 V input, 24 V isolated DC-DC converters for railway signaling and telecom rectifiers. IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward or push-pull topology; rated for 2.5 kV RMS insulation to chassis ground. Use Value: 2.5 kV isolation withstand eliminates need for additional creepage/clearance barriers; RthJC = 6.25 °C/W supports 20 W continuous dissipation with passive cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2N80K5 | Same die, TO-220 (non-insulated) package; no isolation barrier; RthJC = 5.0 °C/W | Requires external insulator for heatsink mounting; higher thermal efficiency but unsafe in grounded-tab layouts | Select when mechanical mounting permits direct tab grounding and isolation is handled externally |
| IPP60R099C7 | 650 V rating, 99 mΩ RDS(on), 7th-gen CoolMOS; lower Qg (3.8 nC), no avalanche rating | Not suitable for 800 V bus designs; lacks 100% avalanche test; better for 380 V DC-link PFC | Prefer only in 650 V systems where reduced switching loss outweighs missing avalanche robustness |
Compared with STP2N80K5, STF2N80K5 trades 1.25 °C/W higher thermal resistance for 2.5 kV isolation - essential for safety-certified AC-DC systems. Versus IPP60R099C7, it sacrifices low-RDS(on) for guaranteed 800 V operation and avalanche survivability in uncontrolled fault conditions.
Availability
STF2N80K5 is available at Aetrix Electronics and suitable for industrial flyback converters, universal-input AC-DC adapters, and active PFC boost stages requiring stable component supply, long-term lifecycle support, and certified high-voltage isolation.
Supply support for STF2N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STF2N80K5 belongs to the MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, space-constrained offline power conversion where 800 V blocking, avalanche robustness, and low gate charge are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF2N80K5 supports 1.3 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS14533 Rev 1. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the SOA boundary at elevated temperatures.
Does STF2N80K5 have an integrated body diode, and what are its recovery characteristics?
Yes, it includes a monolithic source-drain diode with 255 ns reverse recovery time (trr) and 1 µC reverse recovery charge (Qrr) at TJ = 25 °C, per Table 7. These values increase to 285 ns and 1.45 µC at 150 °C, confirming suitability for quasi-resonant and soft-switching topologies.
Can STF2N80K5 be used in place of STP2N80K5 without layout changes?
No - STF2N80K5 uses TO-220FP (insulated tab), while STP2N80K5 uses standard TO-220 (conductive tab). Mounting the STF2N80K5 on a grounded heatsink requires no insulator, but its tab-to-case capacitance and thermal resistance differ, necessitating thermal and safety review before substitution.
What is the significance of "100% avalanche tested" in production?
Each STF2N80K5 undergoes individual unclamped inductive switching (UIS) stress test per JEDEC JESD22-A109, verifying minimum 60.5 mJ single-pulse avalanche energy at TJ = 25 °C. This ensures field reliability under transient overvoltage events like transformer leakage spikes or load dump.
STF2N80K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH5™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3 nC @ 10 V
- Vgs (Max):
- 30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 95 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF2N80K5 FAQ
1.How can I place an order for STF2N80K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STF2N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF2N80K5 reliable?
The price and inventory of STF2N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF2N80K5 is usually 5 days.
3.What payment methods are accepted for STF2N80K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF2N80K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF2N80K5?
STF2N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF2N80K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF2N80K5?
For technical support, including STF2N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF2N80K5 requirements.
6.How does Aetrix verify that STF2N80K5 is sourced from the original manufacturer or authorized distributors?
All STF2N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF2N80K5 meets industry standards.
7.What is the process for return or replacement of STF2N80K5?
All STF2N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF2N80K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF2N80K5 part is unused and in its original packaging.
Return procedure for STF2N80K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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