STMicroelectronics STF30N65M5

Overview

STF30N65M5 from STMicroelectronics is an N-channel 650 V, 125 mΩ typ. (139 mΩ max), 22 A Power MOSFET based on MDmesh M5 vertical process technology in TO-247 package. It delivers extremely low R_DS(on), high dv/dt capability (15 V/ns), and 100% avalanche tested ruggedness for high-efficiency switching in industrial SMPS and PFC stages.

For engineers reviewing the STF30N65M5 datasheet, STF30N65M5 pinout, STF30N65M5 application, or STF30N65M5 equivalent, key selection criteria include its 650 V V_DS, 125 mΩ typical on-resistance at V_GS = 10 V, 88 A pulsed drain current, 140 W power dissipation at T_C = 25 °C, and 500 mJ single-pulse avalanche energy - all critical for hard-switched high-voltage converters.

Technical Context

This MOSFET employs ST's MDmesh M5 superjunction architecture to achieve superior conduction and switching trade-offs: R_DS(on) × Q_g figure-of-merit is optimized for 65–100 kHz industrial power supplies. Its gate threshold voltage (3–5 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility.

The integrated body diode exhibits 336 ns reverse recovery time (T_J = 25 °C) and 6 µC Q_rr, supporting moderate-frequency synchronous rectification and ZVS-assisted topologies. Thermal resistance R_thJC is 0.83 °C/W, enabling high-power operation with minimal heatsink mass when mounted in TO-247 configuration.

Key Specifications

Pinout & Package

STF30N65M5 is supplied in TO-247 package (standard 3-lead variant), with tab connected to drain for optimal thermal and electrical performance in high-current switching nodes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF30N65M5, STW30N65M5 offers identical electrical performance with minor mechanical variation, while IPW65R090CFD7 trades higher avalanche ruggedness for lower on-resistance - making STF30N65M5 optimal for cost-sensitive, reliability-critical industrial SMPS where surge immunity is non-negotiable.

Availability

STF30N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF30N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

STF30N65M5 belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V switching in industrial power conversion systems where thermal performance and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current for STF30N65M5 at 100 °C case temperature?

The maximum continuous drain current is 13 A at T_C = 100 °C, as specified in Table 1 of DS6070 Rev 4. This rating accounts for thermal derating beyond 25 °C and ensures safe operation within the SOA limits defined in Figure 3 for TO-247 package.

Does STF30N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, it features an integrated source-drain diode with 336 ns reverse recovery time (t_rr) and 6 µC reverse recovery charge (Q_rr) at T_J = 25 °C, ISD = 22 A, and di/dt = 100 A/µs. These values are measured under standardized inductive load test conditions per Figure 18 in the datasheet.

Can STF30N65M5 replace STP30N65M5 in a TO-220-based design?

No - STF30N65M5 is packaged exclusively in TO-247, not TO-220. STP30N65M5 uses TO-220 and has higher R_thJA (62.5 °C/W vs. 50 °C/W for TO-247), so direct substitution would require PCB redesign, heatsink revalidation, and thermal performance reassessment.

Is STF30N65M5 suitable for use in hard-switched PFC boost stages?

Yes - its 650 V V_DS, 139 mΩ R_DS(on), 15 V/ns dv/dt rating, and 500 mJ E_AS make it well-suited for continuous-conduction-mode (CCM) PFC boost switches up to 3 kW. The low Q_gd also helps suppress parasitic oscillation during turn-off.