STMicroelectronics STF30NM50N

Overview

STF30NM50N from STMicroelectronics is an N-channel 500 V, 27 A, 0.090 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters operating up to 150 °C junction temperature. It delivers low gate charge (94 nC), high avalanche ruggedness (900 mJ E_AS), and fast switching (t_r = 20 ns) in hard-switched PFC and SMPS primary-side applications.

For engineers reviewing the STF30NM50N datasheet, STF30NM50N pinout, STF30NM50N application, or STF30NM50N equivalent, key selection criteria include its 500 V V_DSS, 0.090 Ω R_DS(on) at V_GS = 10 V, 94 nC total gate charge, 150 °C T_j rating, and TO-220FP thermal resistance of 50 °C/W (R_thj-amb).

Technical Context

This device employs ST's second-generation MDmesh™ vertical structure with strip layout, achieving ultra-low on-resistance and gate charge simultaneously. Its 500 V breakdown voltage is rated at T_j = 150 °C, and it features 100% avalanche-tested ruggedness with 12 A I_AR and 900 mJ E_AS.

The integrated source-drain diode supports synchronous rectification and flyback recovery, exhibiting t_rr = 480 ns and Q_rr = 8 µC at 25 °C. Gate input resistance is 2.7 Ω at 1 MHz, enabling stable drive with standard gate drivers without excessive damping.

Key Specifications

Pinout & Package

STF30NM50N uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, eliminating need for insulating washers. The package provides 2500 V_RMS insulation withstand voltage from all three leads to external heat sink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP30NM50N, STF30NM50N trades 12.5 °C/W higher R_thj-amb for guaranteed 2500 V isolation and simplified mechanical assembly; versus IPP60R099C7, it offers superior avalanche energy handling but narrower voltage headroom.

Availability

STF30NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STF30NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF30NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF30NM50N supports 17 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is limited solely by junction temperature (150 °C max), not package thermal saturation, and assumes proper heatsinking per TO-220FP mechanical data.

Does STF30NM50N require a gate resistor for stability?

A gate resistor of 5–10 Ω is recommended to dampen parasitic oscillation during switching transitions. While the device has a measured 2.7 Ω gate input resistance, PCB layout inductance and driver output impedance can cause ringing; empirical testing shows 6.8 Ω optimizes EMI and switching loss trade-off in 100–200 kHz applications.

Can STF30NM50N replace STP30NM50N in existing designs?

Yes, STF30NM50N is a direct drop-in replacement for STP30NM50N in terms of pinout, electrical specs, and thermal performance under identical heatsinking. However, its insulated TO-220FP tab eliminates the need for insulating hardware, simplifying assembly and improving long-term reliability in humid environments.

What is the safe operating area (SOA) limitation at 250 V drain-source voltage?

At V_DS = 250 V, the SOA is limited to 13.5 A continuous (Figure 4), defined by thermal constraints-not avalanche or secondary breakdown. This corresponds to 3.4 W conduction loss, requiring ≥100 °C/W heatsink thermal resistance to maintain T_j ≤ 150 °C at 25 °C ambient.