STMicroelectronics STF30NM60N

Overview

STF30NM60N from STMicroelectronics is an N-channel 600 V, 0.13 Ω (max), 25 A (continuous at T_C = 25 °C), 40 W TO-220FP Power MOSFET based on MDmesh™ II technology. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives where low conduction loss and fast switching are critical.

For engineers reviewing the STF30NM60N datasheet, STF30NM60N pinout, STF30NM60N application, or STF30NM60N equivalent, key selection criteria include its 0.13 Ω R_DS(on) at V_GS = 10 V, 91 nC total gate charge, 15 V/ns dv/dt ruggedness, and TO-220FP package's 3.1 °C/W junction-to-case thermal resistance for thermally constrained designs.

Technical Context

This device employs ST's second-generation MDmesh™ II vertical structure with strip layout, delivering ultra-low R_DS(on) × Q_g figure-of-merit (11.83 Ω·nC) for high-efficiency hard-switched converters. Its 150 °C maximum junction temperature and 100% avalanche-tested construction support robust operation under transient overvoltage conditions.

The integrated body diode exhibits 540 ns reverse recovery time (T_j = 25 °C) and 10 µC Q_rr, enabling reliable freewheeling in bridge topologies. Gate threshold voltage is tightly specified at 2–4 V, ensuring stable turn-on across temperature and minimizing spurious conduction in noisy environments.

Key Specifications

Pinout & Package

STF30NM60N uses the TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, eliminating need for insulating washers. Package height is 15.85 mm, lead pitch is 2.54 mm, and drain tab is electrically connected to Pin 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP30NM60N, STF30NM60N trades thermal performance for electrical isolation and compact mounting; versus IPP60R099C6, it offers proven ruggedness and lower system cost in <200 kHz industrial SMPS where avalanche immunity is prioritized over peak efficiency.

Availability

STF30NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for STF30NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF30NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V industrial power conversion systems.

FAQ

What is the maximum continuous drain current for STF30NM60N at 100 °C case temperature?

The maximum continuous drain current is 15.8 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the TO-220FP package, not silicon capability-pulse current remains 100 A per absolute maximum ratings.

Does STF30NM60N require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 2–4 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V suffices for turn-off; applying –5 V is unnecessary and not recommended, as V_GS minimum is ±30 V but negative bias adds no reliability benefit for this part.

Can STF30NM60N replace STP30NM60N in an existing PCB layout?

No direct footprint replacement is possible: STF30NM60N uses TO-220FP (full-pack) with insulated tab and different lead spacing, while STP30NM60N uses standard TO-220. Mechanical redesign is required to accommodate the insulated mounting and altered pin pitch (2.54 mm vs. 2.54 mm but different tab clearance).

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C junction temperature?

At T_j = 150 °C, Q_rr is 12 µC (Table 8, second row), measured under ISD = 25 A, di/dt = 100 A/µs, VDD = 100 V. This represents a 20% increase over the 25 °C value (10 µC), consistent with silicon physics and confirmed in Figure 23 of the datasheet.