STMicroelectronics STF30NM60ND

Overview

STF30NM60ND from STMicroelectronics is an N-channel 600 V, 0.11 Ω (typ), 25 A FDmesh™ II Power MOSFET with integrated fast-recovery body diode in TO-220FP package. It delivers high dv/dt immunity (48 V/ns), 100% avalanche tested ruggedness (EAS = 900 mJ), and low gate charge (Qg = 100 nC), enabling robust ZVS phase-shift converter topologies in industrial SMPS.

For engineers reviewing the STF30NM60ND datasheet, STF30NM60ND pinout, STF30NM60ND application, or STF30NM60ND equivalent, key selection criteria include R_DS(on) stability over temperature, diode reverse recovery performance (trr = 170 ns @ 25 °C), safe operating area at TC = 100 °C (ID = 15.8 A), and thermal resistance (R_thj-case = 3.1 °C/W) for heatsink-limited designs.

Technical Context

This FDmesh™ II device uses a vertical strip layout combining reduced on-resistance with intrinsic fast diode behavior-enabling simultaneous high voltage blocking (V_DSS = 600 V), low conduction loss (R_DS(on) max = 0.13 Ω), and controlled reverse recovery (Q_rr = 1.2 µC, I_RRM = 15 A).

Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers, while low input capacitance (C_iss = 2800 pF) and gate input resistance (R_g = 3.0 Ω) support high-frequency switching up to 100 kHz in hard-switched PFC stages without excessive driver loss.

Key Specifications

Pinout & Package

STF30NM60ND is housed in a TO-220FP (Full-Pak) package: insulated plastic case with internal isolation between drain tab and mounting surface, rated for 2500 V_RMS insulation withstand voltage. The package features three leads in linear 1–2–3 configuration, with lead 1 (Source), lead 2 (Gate), and lead 3 (Drain) aligned vertically on the front side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP30NM60ND, STF30NM60ND trades 0.66 → 3.1 °C/W thermal resistance for built-in isolation-critical for grounded-chassis systems-while IPP60R099C6 offers lower conduction loss but lacks the integrated fast diode needed for ZVS bridge operation.

Availability

STF30NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, uninterruptible power systems, motor drive inverters, and ZVS phase-shift converters requiring stable component supply across multi-year production cycles.

Supply support for STF30NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

STF30NM60ND belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure where avalanche ruggedness and fast diode performance are mandatory.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STF30NM60ND supports 15.8 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This value is limited by junction temperature (T_J ≤ 150 °C) and thermal resistance (R_thj-case = 3.1 °C/W), not by package current rating alone.

Does STF30NM60ND require an external flyback diode in bridge configurations?

No. STF30NM60ND integrates a fast-recovery body diode with trr = 170 ns and Q_rr = 1.2 µC, validated for use in half-bridge and full-bridge topologies without external anti-parallel diodes. Its diode performance meets ZVS commutation requirements in phase-shifted converters.

How is the TO-220FP package different from standard TO-220 in terms of mounting?

The TO-220FP package features full electrical isolation between the drain-connected metal tab and all three leads, rated for 2500 V_RMS insulation. Unlike standard TO-220, it eliminates the need for insulating washers or silicone pads when mounted directly to a grounded heatsink, simplifying thermal design and reducing thermal resistance by ~0.3 °C/W.

What gate drive voltage is recommended for reliable turn-on?

A minimum gate drive voltage of 10 V is required to fully enhance the STF30NM60ND, as its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V. Driving at 12–15 V improves R_DS(on) margin and noise immunity but must stay within the ±25 V absolute maximum gate-source rating.