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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF31N65M5

Name: STF31N65M5
Brand: STMicroelectronics
SKU: STF31N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF31N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF31N65M5.pdf

Description:: MOSFET N-CH 650V 22A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF31N65M5 from STMicroelectronics is an N-channel 650 V, 148 mΩ max, 22 A Power MOSFET in TO-220FP package, based on MDmesh M5 vertical process technology. It delivers extremely low R_DS(on), high avalanche ruggedness (5 A repetitive), and low gate charge (45 nC), making it suitable for high-efficiency AC-DC power supplies and industrial SMPS.

For engineers reviewing the STF31N65M5 datasheet, STF31N65M5 pinout, STF31N65M5 application, or STF31N65M5 equivalent, key selection criteria include its 650 V V_BR(DSS), 148 mΩ R_DS(on) at 10 V_GS, 45 nC total gate charge, 150 W P_TOT (D²PAK/TO-220/TO-247) vs. 30 W (TO-220FP), and 15 V/ns diode recovery dv/dt rating.

Technical Context

This device uses ST's MDmesh M5 silicon process to achieve ultra-low conduction losses while maintaining robust switching performance. Its 124 mΩ typ. R_DS(on) and 1865 pF C_iss support high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated body diode features 336 ns trr and 5 μC Q_rr at T_j = 25 °C, enabling reliable operation in continuous conduction mode (CCM) PFC stages. The TO-220FP package provides insulated mounting with 2.5 kV RMS isolation voltage between leads and heatsink.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	650 V - Withstands DC bus voltages up to 400 V nominal with 1.6× safety margin in offline converters
R_DS(on) max	148 mΩ @ V_GS = 10 V, I_D = 11 A - Enables <1.5 W conduction loss at 22 A continuous drain current
Q_g	45 nC - Reduces gate drive power requirement and enables use with standard 1–2 A peak gate drivers
C_iss	1865 pF - Supports stable high-frequency switching with minimal Miller effect-induced oscillation risk
E_AS	410 mJ - Guarantees unclamped inductive switching survival without external snubbers in flyback or LLC resonant designs
T_j max	150 °C - Allows operation in sealed industrial enclosures with ambient temperatures up to 85 °C
I_D cont @ T_C = 100 °C	13.9 A - Defines usable current derating for thermally constrained TO-220FP heatsink layouts

Pinout & Package

STF31N65M5 is housed in a TO-220FP (Full-Pak) package with internal insulation between the drain tab and mounting surface, enabling direct heatsink attachment without insulating washers. The plastic body isolates the drain (Tab), gate (Pin 1), and source (Pin 3) terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≤±25 V gate-source voltage; low 2.8 Ω intrinsic gate resistance minimizes ringing
Pin 2 (D / Tab)	Drain	Main high-voltage power path; electrically isolated metal tab allows direct heatsink mounting with 2.5 kV RMS withstand
Pin 3 (S)	Source	Reference node for gate drive and current sensing; connects to primary-side ground in flyback/forward topologies

Key Features

Feature	Design Value
100% avalanche tested	Ensures guaranteed single-pulse and repetitive avalanche capability (I_AR = 5 A, E_AS = 410 mJ) without design margin uncertainty
Extremely low R_DS(on)	124 mΩ typ. reduces conduction losses by >35% versus legacy 650 V superjunction MOSFETs in 22 A applications
Low gate charge & C_iss	45 nC Q_g and 1865 pF C_iss enable efficient 100 kHz+ operation with minimal driver stress and EMI generation
High dv/dt ruggedness	50 V/ns rated MOSFET dv/dt ensures noise immunity during fast switching transitions in high-noise industrial environments

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switch in 500–1000 W telecom rectifiers operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, synchronized to PWM controller with 50 ns voltage delay time.

Use Value: 148 mΩ R_DS(on) limits conduction loss to <1.2 W at full load, improving system efficiency by 0.8% over comparable 600 V devices.

Use Scenario: Main switch in redundant 1+1 80 PLUS Titanium server PSUs using LLC resonant conversion.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) capable MOSFET with 336 ns body diode trr supporting soft-recovery at 300 kHz.

Use Value: Low Q_rr (5 μC) and fast trr reduce dead-time losses and improve light-load efficiency by 1.1% versus standard superjunction parts.

EV Charger OBC

Industrial Motor Drive

Use Scenario: Boost PFC stage in 6.6 kW on-board chargers converting 230 V AC to 400 V DC bus.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) switch with 15 V/ns diode recovery dv/dt rating ensuring stability under high di/dt conditions.

Use Value: 100% avalanche-tested construction eliminates need for external clamping circuits, reducing BOM count and board area by 12%.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW industrial VFDs driving induction motors at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement delivering lower switching losses and higher thermal margin at 100 °C case temperature.

Use Value: 13.9 A continuous current rating at T_C = 100 °C supports sustained 100% torque output without derating in enclosed cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP31N65M5	Same die, TO-220 package with non-isolated drain tab; R_thJC = 0.83 °C/W vs. 4.17 °C/W for TO-220FP	Requires insulating pad for heatsink mounting; better thermal performance but no built-in isolation	Select when thermal budget is critical and mechanical isolation is handled externally
STW31N65M5	Same die, TO-247 package; R_thJC = 0.83 °C/W, P_TOT = 150 W, no internal isolation	Higher power handling and lower thermal resistance; used in >1 kW industrial inverters	Select for systems demanding >100 W dissipation or forced-air cooling with direct-tab mounting

Compared with STF31N65M5, STP31N65M5 offers superior thermal resistance but requires external insulation, while STW31N65M5 enables higher power density in open-frame designs-making STF31N65M5 optimal for space-constrained, insulated-mount applications like enclosed server PSUs.

Availability

STF31N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, EV on-board chargers, and motor drives requiring stable component supply across multi-year production cycles.

Supply support for STF31N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STF31N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems where low R_DS(on) and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for STF31N65M5 at 100 °C case temperature?

The maximum continuous drain current is 13.9 A at T_C = 100 °C, as specified in Table 1 of DS8912 Rev 5. This value is limited by junction temperature (T_j ≤ 150 °C) and package thermal resistance (R_thJC = 4.17 °C/W), not by bondwire or die current density.

Does STF31N65M5 require a gate resistor for safe operation in hard-switched topologies?

Yes-a minimum gate resistor of 4.7 Ω is recommended per Figure 18 test circuit in DS8912. This value controls dV/dt during turn-on, prevents parasitic oscillation due to 2.8 Ω intrinsic gate resistance, and ensures td(v) = 46 ns and tr(v) = 8 ns remain within safe SOA limits.

Can STF31N65M5 replace STP31N65M5 in an existing TO-220 footprint?

No-STF31N65M5 uses TO-220FP with different pin assignment (G-D-S vs. G-S-D) and insulated drain tab, requiring PCB layout revision. Mechanical dimensions differ: TO-220FP has L3 = 28.6–30.6 mm and L4 = 9.8–10.6 mm, while TO-220 has L30 = 28.9 mm and L20 = 16.4 mm per Tables 10 and 11.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C junction temperature?

The typical Q_rr is 6 μC at T_j = 150 °C, ISD = 22 A, di/dt = 100 A/μs, and VDD = 100 V, as listed in Table 7. This represents a 20% increase over the 25 °C value (5 μC), directly impacting boost PFC efficiency and EMI in high-temperature operation.

STF31N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 148mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 816 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF31N65M5 FAQ

1.How can I place an order for STF31N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF31N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF31N65M5 reliable?

The price and inventory of STF31N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF31N65M5 is usually 5 days.

3.What payment methods are accepted for STF31N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF31N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF31N65M5?

STF31N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF31N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF31N65M5?

For technical support, including STF31N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF31N65M5 requirements.

6.How does Aetrix verify that STF31N65M5 is sourced from the original manufacturer or authorized distributors?

All STF31N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF31N65M5 meets industry standards.

7.What is the process for return or replacement of STF31N65M5?

All STF31N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF31N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF31N65M5 part is unused and in its original packaging.

Return procedure for STF31N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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