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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF32N65M5

Name: STF32N65M5
Brand: STMicroelectronics
SKU: STF32N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF32N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF32N65M5.pdf

Description:: MOSFET N-CH 650V 24A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:8,038

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Product details

Overview

STF32N65M5 from STMicroelectronics is an N-channel 650 V, 24 A Power MOSFET in D²PAK (TO-263) package, featuring 95 mΩ typ. R_DS(on), 72 nC total gate charge, and 100% avalanche-tested ruggedness. It employs MDmesh M5 vertical process technology for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF32N65M5 datasheet, STF32N65M5 pinout, STF32N65M5 application, or STF32N65M5 equivalent, key selection criteria include its 650 V V_(BR)DSS, low 1.5 V diode forward voltage at 24 A, 375 ns reverse recovery time, and thermal resistance of 0.83 °C/W junction-to-case - critical for high-power, thermally constrained designs.

Technical Context

This MOSFET integrates ST's MDmesh M5 silicon with PowerMESH layout to achieve ultra-low R_DS(on) while maintaining robust 650 V blocking capability and fast switching dynamics. Its 3320 pF input capacitance and 29 nC gate-drain charge enable efficient hard-switching up to several hundred kHz.

The integrated body diode delivers 24 A continuous source-drain current with 6 µC reverse recovery charge and 33 A peak I_RRM, supporting synchronous rectification and inductive load commutation without external freewheeling diodes in many topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Enables direct use in 400 V AC mains-fed converters without voltage derating concerns.
R_DS(on) max	119 mΩ @ V_GS = 10 V, I_D = 12 A - Limits conduction loss to ≤28.6 W at 24 A, enabling compact heatsink design.
Q_g	72 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
E_AS	650 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching reliability.
R_thJC	0.83 °C/W - Enables 150 W dissipation with ≤125 °C junction rise above case, critical for high-power density layouts.
t_rr	375 ns @ T_J = 25 °C - Reduces switching loss and EMI during diode recovery in bridge configurations.
C_iss	3320 pF @ V_DS = 100 V - Sets Miller plateau duration and influences dv/dt immunity in high-side operation.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline compliant with JEDEC TO-263-3 standard.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain terminal / thermal pad	Primary high-voltage node; soldered to PCB copper pour for heat extraction and low-inductance return path.
G (Pin 1)	Gate control input	High-impedance MOS control node requiring <100 nA leakage; sensitive to ESD and ringing.
S (Pin 3)	Source reference / return path	Low-side switching reference point; carries full load current and must be routed with minimal inductance.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness under unclamped inductive switching stress up to 8 A repetitive avalanche current.
MDmesh M5 silicon process	Delivers 95 mΩ typ. R_DS(on) at 650 V - 30% lower on-resistance than prior-generation 650 V superjunction MOSFETs.
Low Q_gd/Q_g ratio	29/72 = 0.40 - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk.
Integrated fast-recovery body diode	375 ns t_rr, 6 µC Q_rr - Enables quasi-resonant and LLC primary-side synchronous rectification without external diode.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade A2 specification.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 24 A DC link current with 650 V blocking duty cycle.

Use Value: 95 mΩ R_DS(on) reduces conduction loss by 1.8 W vs. legacy 650 V MOSFETs, improving full-load efficiency from 95.2% to 95.7%.

Use Scenario: 7.5 kW three-phase VFD driving induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz PWM inverter leg with integrated diode commutation.

Use Value: 375 ns t_rr and 1.5 V V_SD cut diode recovery loss by 42% versus standard 650 V MOSFETs, lowering heatsink temperature by 11 °C.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: 3 kW telecom rectifier with continuous conduction mode (CCM) boost PFC stage.

IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz with 24 A peak inductor current.

Use Value: 72 nC Q_g enables clean gate drive with IR2110-based driver, reducing gate loss to 0.32 W at 65 kHz.

Use Scenario: 6.6 kW single-phase OBC using interleaved totem-pole PFC with SiC diode co-packaging.

IC Role / Device Role / Timing Role: Low-side switch in bidirectional totem-pole configuration with zero-voltage switching assist.

Use Value: 15 V/ns dv/dt rating ensures reliable turn-off during fast voltage transitions, preventing false triggering in high-dv/dt environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP32N65M5	Same die, TO-220FP package; R_thJA = 40 °C/W vs. 30 °C/W for D²PAK; no exposed drain tab.	Limited to lower-power (<100 W) or forced-air-cooled applications due to higher thermal resistance.	Select when mechanical mounting constraints prohibit surface-mount or when through-hole assembly is required.
IPP65R099C7	Infineon CoolMOS C7; 99 mΩ R_DS(on), 650 V, but 52 nC Q_g; lower gate charge but higher on-resistance.	Better suited for >200 kHz ZVS/ZCS topologies where gate loss dominates; less optimal for 50–150 kHz hard-switched PFC.	Prefer for resonant converters prioritizing switching loss over conduction loss; verify dv/dt immunity (12 V/ns rated).

Compared with STP32N65M5 and IPP65R099C7, STF32N65M5 offers superior thermal performance via D²PAK mounting and balanced R_DS(on)/Q_g for 50–150 kHz hard-switched applications - making it optimal for high-power density offline SMPS where both conduction and thermal management are critical.

Availability

STF32N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for STF32N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF32N65M5 belongs to the MDmesh™ M5 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems demanding low R_DS(on), rugged avalanche capability, and fast body diode recovery.

FAQ

Is STF32N65M5 pin-compatible with STB32N65M5?

Yes - STF32N65M5 and STB32N65M5 share identical D²PAK (TO-263) pinout (G-D-S), same electrical specifications, and identical MDmesh M5 die. The only difference is packaging: STF denotes tape-and-reel, STB denotes bulk. Both are electrically and mechanically interchangeable in PCB layout.

What is the maximum recommended gate resistor for hard-switching at 100 kHz?

A 4.7 Ω gate resistor is validated per datasheet Figure 15 and Table 6, delivering 53 ns turn-off delay and 16 ns fall time at V_DD = 400 V, I_D = 15 A. For 100 kHz operation, this value balances switching speed against gate ringing and EMI; values below 3.3 Ω increase dv/dt stress without meaningful efficiency gain.

Does STF32N65M5 require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage of 3–5 V and is fully enhanced at V_GS = 10 V. While −5 V to −10 V improves noise immunity in high-dv/dt environments, the datasheet confirms stable turn-off down to V_GS = 0 V, and no negative bias is required for standard operation.

Can STF32N65M5 replace IGBTs in 600 V motor drive inverters?

Yes - its 24 A continuous current, 96 A pulsed rating, and 375 ns body diode recovery support IGBT replacement in 7.5 kW motor drives up to 16 kHz. However, gate drive must deliver ≥2 A peak (vs. typical IGBT 1 A) due to 72 nC Q_g, and layout must minimize source inductance to avoid Miller-induced turn-on.

STF32N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 119mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF32N65M5 FAQ

1.How can I place an order for STF32N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF32N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF32N65M5 reliable?

The price and inventory of STF32N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF32N65M5 is usually 5 days.

3.What payment methods are accepted for STF32N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF32N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF32N65M5?

STF32N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF32N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF32N65M5?

For technical support, including STF32N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF32N65M5 requirements.

6.How does Aetrix verify that STF32N65M5 is sourced from the original manufacturer or authorized distributors?

All STF32N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF32N65M5 meets industry standards.

7.What is the process for return or replacement of STF32N65M5?

All STF32N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF32N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF32N65M5 part is unused and in its original packaging.

Return procedure for STF32N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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