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STMicroelectronics STF32NM50N
- Part No.:
- STF32NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF32NM50N.pdf
- Description:
- MOSFET N CH 500V 22A TO-220FP
- Quantity:
- Payment:
- Shipping:
Inventory:177
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Product details
Overview
STF32NM50N from STMicroelectronics is an N-channel 500 V, 100 mΩ typ. (130 mΩ max.), 22 A MDmesh II Power MOSFET in D²PAK package, optimized for high-efficiency switching converters requiring low gate charge (62.5 nC) and robust avalanche capability (340 mJ). It serves as a primary high-side switch in industrial SMPS and PFC stages.
For engineers reviewing the STF32NM50N datasheet, STF32NM50N pinout, STF32NM50N application, or STF32NM50N equivalent, key selection criteria include its 500 V VDS, 130 mΩ RDS(on) at 10 VGS, 15 V/ns dv/dt ruggedness, and 100% avalanche-tested reliability under unclamped inductive switching.
Technical Context
This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its low Ciss (1973 pF), Coss (179 pF), and Crss (9.7 pF) enable fast, efficient hard-switching up to several hundred kHz.
The integrated body diode exhibits 328 ns reverse recovery time (TJ = 25 °C) and 5 µC Qrr, supporting synchronous rectification and ZVS-assisted topologies. Thermal resistance RthJC is 0.66 °C/W, enabling high-power operation with minimal heatsink mass.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25% margin for voltage transients |
| RDS(on) max | 130 mΩ @ VGS = 10 V, ID = 11 A - enables <1.5 W conduction loss at 11 A continuous current |
| Qg | 62.5 nC - reduces gate drive power and allows use of smaller, lower-cost drivers |
| EAS | 340 mJ - ensures reliable operation under unclamped inductive switching without external snubbers |
| dv/dt rating | 15 V/ns - prevents spurious turn-on in high-noise bridge configurations |
| TJ max | 150 °C - supports extended thermal derating in sealed industrial enclosures |
| Coss eq. | 325 pF - defines energy stored in output capacitance (Eoss ≈ 3.3 µJ at 400 V), critical for soft-switching design |
Pinout & Package
D²PAK (TO-263) package: surface-mount, single-ended heat dissipation via exposed drain tab (Pin 2/TAB); requires thermal pad connection to PCB copper pour for optimal RthJA (30 °C/W on 1 in² 2-oz FR-4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; 3.8 Ω intrinsic gate resistance limits ringing; requires <10 Ω external series resistor for stable switching |
| 2 (TAB/D) | Drain | Main power output node; electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to system ground |
| 3 (S) | Source | Power return and gate reference; ties to low-side driver ground; carries full load current and diode recovery current |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh II vertical strip structure | Delivers world-class RDS(on) × Qg figure-of-merit (130 mΩ × 62.5 nC = 8.1 nΩ·F) for ultra-high efficiency |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 340 mJ across production lot - eliminates need for external clamping in flyback/PFC |
| Low Ciss/Coss ratio | Ciss/Coss ≈ 11:1 enables predictable Miller plateau timing and clean turn-off in half-bridge configurations |
| Enhanced diode dV/dt immunity | 15 V/ns rated dv/dt withstand supports >100 kHz operation in LLC resonant converters without false triggering |
Applications
| Industrial Switched-Mode Power Supply | Server & Telecom Rectification |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW AC/DC front-end with active PFC + LLC stage. IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched power switch handling 400 V DC bus and 22 A peak currents. Use Value: Low RDS(on) and Qg reduce conduction and switching losses by >12% vs. legacy Superjunction MOSFETs, improving full-load efficiency to >96%. |
Use Scenario: Output synchronous rectifier in 48 V intermediate bus converter for AI accelerators. IC Role / Device Role / Timing Role: Low-side switch managing bidirectional current flow during ZVS transitions with tight dead-time control. Use Value: Fast 328 ns trr and low Qrr minimize reverse recovery losses and EMI generation during commutation. |
| Solar Microinverter DC/AC Stage | EV On-Board Charger (OBC) PFC |
|
Use Scenario: Bridge-leg switch in three-phase inverter driving transformerless PV string outputs. IC Role / Device Role / Timing Role: High-reliability 500 V switch subjected to repeated partial discharge and grid fault transients. Use Value: 150 °C TJ rating and 100% avalanche testing ensure field longevity under solar irradiance cycling and lightning surge stress. |
Use Scenario: Boost switch in 6.6 kW bidirectional OBC operating in continuous conduction mode (CCM). IC Role / Device Role / Timing Role: Main energy transfer element handling 22 A RMS current and 500 V blocking with minimal thermal rise. Use Value: 0.66 °C/W RthJC allows direct mounting to cold plate, reducing thermal interface layers and system size by 18%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW32NM50N | Same die, TO-247 package; RthJC = 0.66 °C/W identical, but RthJA = 50 °C/W (vs. 30 °C/W for D²PAK) | Better mechanical robustness and higher pulse current handling (IDM = 88 A), suited for through-hole prototyping and high-reliability industrial drives | Select when board-level thermal management is constrained and forced-air cooling or large heatsinks are available |
| IPP60R190C7 | 650 V, 190 mΩ, 15.5 A; CoolMOS C7 technology; Qg = 43 nC - lower gate charge but higher RDS(on) and VDS | Optimized for 600 V systems (e.g., 400 V nominal with wide input range); less suitable for strict 500 V-rated designs due to tighter margin | Choose only if system requires 650 V rating or significantly lower gate drive loss outweighs conduction penalty |
Compared with STW32NM50N, STF32NM50N offers superior PCB thermal performance and automated assembly compatibility; versus IPP60R190C7, it delivers 30% lower conduction loss at 400 V bus but requires stricter gate drive layout due to higher Qg.
Availability
STF32NM50N is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, server rectification modules, solar microinverters, and EV on-board chargers requiring stable component supply and long-term manufacturability.
Supply support for STF32NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications where low RDS(on) × Qg and rugged avalanche performance are critical.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF32NM50N supports 13.86 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9167 Rev 2. This derating reflects thermal limitations of the D²PAK package and ensures safe operation within the SOA boundary at elevated ambient temperatures.
Does STF32NM50N have an integrated ESD protection diode on the gate?
No - the device has no integrated gate ESD protection. Gate-source voltage must be limited to ±25 V per absolute maximum ratings, and external TVS or RC filtering is required in systems exposed to handling or system-level ESD events per IEC 61000-4-2.
Can STF32NM50N replace STB32NM50N in existing designs?
Yes - STF32NM50N and STB32NM50N share identical electrical specifications, thermal characteristics, and D²PAK packaging. The STF variant uses tape-and-reel packaging for automated assembly, while STB is supplied in tubes; both use the same die and marking "32NM50N".
What is the recommended gate resistor value for 200 kHz hard-switching operation?
A 4.7 Ω gate resistor is validated per Figure 15 and Table 6 in DS9167 for 250 V VDD, 11 A ID, yielding td(on) = 21.5 ns and tf = 23.6 ns. For 200 kHz operation, this value balances switching speed against gate drive loss and EMI; values below 3.3 Ω increase ringing risk without meaningful efficiency gain.
STF32NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1973 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF32NM50N FAQ
1.How can I place an order for STF32NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STF32NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF32NM50N reliable?
The price and inventory of STF32NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF32NM50N is usually 5 days.
3.What payment methods are accepted for STF32NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF32NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF32NM50N?
STF32NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF32NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF32NM50N?
For technical support, including STF32NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF32NM50N requirements.
6.How does Aetrix verify that STF32NM50N is sourced from the original manufacturer or authorized distributors?
All STF32NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF32NM50N meets industry standards.
7.What is the process for return or replacement of STF32NM50N?
All STF32NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STF32NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF32NM50N part is unused and in its original packaging.
Return procedure for STF32NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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