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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF33N60DM2

Name: STF33N60DM2
Brand: STMicroelectronics
SKU: STF33N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF33N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF33N60DM2.pdf

Description:: MOSFET N-CH 650V 24A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,643

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Product details

Overview

STF33N60DM2 from STMicroelectronics is a high-voltage N-channel MDmesh DM2 Power MOSFET in TO-220FP package, rated 600 V V_DS, 110 mΩ typ. R_DS(on), and 24 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with 120 ns trr (T_J = 25 °C) and 2.85 µC Q_rr (T_J = 150 °C), enabling high-efficiency ZVS phase-shift and bridge-topology converters.

For engineers reviewing the STF33N60DM2 datasheet, STF33N60DM2 pinout, STF33N60DM2 application, or STF33N60DM2 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 43 nC total gate charge, 1870 pF C_iss, 100% avalanche tested rating (5.5 A I_AR, 570 mJ E_AS), and Zener-protected gate.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon technology optimized for high-voltage switching with minimized recovery losses. Its low Q_rr (0.53–2.85 µC) and fast trr (120–316 ns) reduce turn-off stress in hard-switched and resonant topologies, while ultra-low C_iss (1870 pF) and C_oss (87 pF) enable high-frequency operation with minimal switching loss.

The device features intrinsic Zener gate protection, 100 V/ns MOSFET dv/dt ruggedness under V_DD ≤ 480 V, and 1000 A/µs diode di/dt capability. Its R_thJC of 3.6 °C/W supports thermally demanding industrial power supplies without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V DC bus and 3-phase rectified applications
R_DS(on) max	130 mΩ - Enables <1.5 W conduction loss at 24 A, reducing heatsink requirements
Q_g	43 nC - Low gate drive energy allows use with standard 1-A gate drivers at >100 kHz
trr / Q_rr	120 ns / 0.53 µC (25 °C); 316 ns / 2.85 µC (150 °C) - Minimizes commutation loss in LLC and phase-shift full-bridge
dv/dt ruggedness	100 V/ns - Ensures reliable operation during fast voltage transients in high-dV/dt environments
E_AS	570 mJ - Withstands single-pulse inductive energy without failure, enhancing system robustness
V_ISO	2.5 kV RMS - Provides reinforced insulation between leads and heatsink for safety-critical AC-DC designs

Pinout & Package

TO-220FP (Type B) package with insulated tab: compact through-hole mounting, integrated thermal isolation, and creepage/clearance compliant with IEC 60950-1.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±30 V dynamic swing; Zener-protected against overvoltage
2 (D)	Drain	High-side switching node; connected to heat sink via insulated tab; rated for 600 V blocking
3 (S)	Source	Power return path and gate reference; low-inductance layout critical for fast switching stability

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 120 ns (25 °C), Q_rr = 0.53 µC - Reduces reverse recovery loss by >60% vs. standard superjunction MOSFETs
Extremely low gate charge	Q_g = 43 nC - Cuts gate driver power consumption and enables higher PWM frequencies
100% avalanche tested	I_AR = 5.5 A, E_AS = 570 mJ - Guarantees ruggedness in unclamped inductive switching events
Zener-protected gate	V_GS(max) = ±30 V (dynamic) - Eliminates need for external gate clamping in noisy industrial environments
High dv/dt immunity	100 V/ns - Prevents false turn-on during rapid voltage transitions in multi-kW inverters

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 3–5 kW telecom rectifier modules operating at 100–300 kHz with active clamp forward or phase-shift full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage power switch with integrated fast-recovery diode used for synchronous rectification and ZVS transition.

Use Value: 2.85 µC Q_rr at 150 °C reduces diode-induced turn-off loss by 42% versus STF24NM60ND, improving efficiency at full load.

Use Scenario: High-density 1U server PSU using interleaved PFC + LLC resonant converter with 48 V output.

IC Role / Device Role / Timing Role: Upper-leg switch in asymmetric half-bridge LLC primary, leveraging low C_oss (87 pF) for precise zero-voltage switching timing.

Use Value: 1870 pF C_iss and 4.5 Ω R_g enable clean 200 kHz gate drive with <10 ns propagation delay mismatch across paralleled devices.

Solar Microinverters

EV On-Board Chargers

Use Scenario: DC-AC H-bridge stage in single-phase 300–600 V input microinverter with transformerless topology.

IC Role / Device Role / Timing Role: High-side N-channel switch managing bidirectional energy flow; body diode conducts freewheeling current during dead-time.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during fast AC line polarity reversal, eliminating shoot-through risk.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 400 V HV auxiliary rail.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in dual-active-bridge (DAB) converter, operating at 250 kHz with soft-switching.

Use Value: 1.6 V V_SD at 24 A and low R_DS(on) cut conduction loss by 35% vs. discrete SiC Schottky + MOSFET solution at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF24NM60ND	R_DS(on) = 160 mΩ, Q_rr = 1.1 µC (25 °C), no Zener gate protection	Higher conduction and recovery loss; unsuitable for >150 kHz or high-di/dt ZVS	Select when cost sensitivity outweighs efficiency and ruggedness requirements in <2 kW designs
IPW60R099P7	R_DS(on) = 99 mΩ, Q_rr = 0.42 µC (25 °C), TO-247 package, no insulated tab	Lower R_DS(on) but requires external isolation; higher C_iss (2250 pF) increases gate drive demand	Select when maximum efficiency at 100–120 kHz is prioritized and heatsink isolation is handled externally

Compared with STF24NM60ND and IPW60R099P7, STF33N60DM2 uniquely balances low Q_rr, Zener gate protection, and insulated TO-220FP packaging-making it optimal for space-constrained, safety-critical 2–5 kW industrial and EV charging systems where reliability trumps marginal R_DS(on) gain.

Availability

STF33N60DM2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server & telecom rectifiers, solar microinverters, and EV on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF33N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, power transistors, and microcontrollers for industrial, automotive, and consumer markets.

STF33N60DM2 belongs to the MDmesh DM2 series-a family of high-voltage superjunction MOSFETs engineered specifically for high-efficiency, high-frequency switched-mode power conversion in industrial and renewable energy systems.

FAQ

What is the maximum safe operating temperature for STF33N60DM2?

The STF33N60DM2 has an operating junction temperature range of –55 °C to 150 °C. Its R_thJC is 3.6 °C/W, so with a case temperature of 100 °C and 24 A continuous current, junction temperature remains within limits if power dissipation stays below 35 W. Derating is required above T_C = 25 °C per the datasheet SOA curve.

Does STF33N60DM2 require an external gate resistor for stability?

Yes-ST recommends a gate resistor of 4.7 Ω (as used in the datasheet switching time test circuit) to dampen ringing and control dV/dt during turn-on/off. Lower values increase switching speed but risk oscillation; higher values reduce EMI but raise switching losses. Layout parasitics must also be minimized due to its 43 nC Q_g and 1870 pF C_iss.

Can STF33N60DM2 replace STF24NM60ND in existing designs?

Yes, with verification: both are TO-220FP, share identical pinout (G-D-S), and have same V_DS rating. However, STF33N60DM2 has lower R_DS(on) (130 mΩ vs. 160 mΩ), faster trr (120 ns vs. 220 ns), and Zener gate protection-requiring review of gate drive strength and PCB thermal relief. No layout change is needed.

Is the body diode suitable for synchronous rectification?

No-the body diode is optimized for fast recovery in hard-switched freewheeling, not synchronous rectification. Its V_SD is 1.6 V at 24 A, significantly higher than Schottky or GaN FETs. For synchronous rectification, external low-V_F diodes or dedicated SR controllers with logic-level MOSFETs are recommended.

STF33N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF33N60DM2 FAQ

1.How can I place an order for STF33N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF33N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF33N60DM2 reliable?

The price and inventory of STF33N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF33N60DM2 is usually 5 days.

3.What payment methods are accepted for STF33N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF33N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF33N60DM2?

STF33N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF33N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF33N60DM2?

For technical support, including STF33N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF33N60DM2 requirements.

6.How does Aetrix verify that STF33N60DM2 is sourced from the original manufacturer or authorized distributors?

All STF33N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF33N60DM2 meets industry standards.

7.What is the process for return or replacement of STF33N60DM2?

All STF33N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STF33N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF33N60DM2 part is unused and in its original packaging.

Return procedure for STF33N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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