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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF33N60DM6

Name: STF33N60DM6
Brand: STMicroelectronics
SKU: STF33N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF33N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF33N60DM6.pdf

Description:: MOSFET N-CH 600V 25A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF33N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 115 mΩ typ. R_DS(on) at V_GS = 10 V, 25 A continuous drain current (T_C = 25 °C), fast-recovery body diode (t_rr = 105 ns, Q_rr = 0.47 µC), and 100% avalanche tested. It is engineered for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STF33N60DM6 datasheet, STF33N60DM6 pinout, STF33N60DM6 application, or STF33N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), low gate charge (Q_g = 35 nC), C_oss,eq = 225 pF, R_thj-case = 3.6 °C/W, and Zener-protected gate.

Technical Context

This device implements ST's MDmesh DM6 superjunction architecture optimized for high-voltage switching with minimized recovery losses. Its fast-recovery body diode achieves t_rr = 105 ns and Q_rr = 0.47 µC at T_j = 25 °C, enabling reduced switching loss in hard- and soft-switching topologies.

The MOSFET delivers 100 V/ns dv/dt ruggedness under defined conditions (V_DS ≤ 480 V) and supports unclamped inductive switching with E_AS = 360 mJ. Gate drive is simplified by low input capacitance (C_iss = 1500 pF) and intrinsic gate resistance of 1.8 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in ZVS converters with margin
R_DS(on) max	128 mΩ - Ensures <1.6 W conduction loss at 25 A, TC = 25 °C
I_D cont.	25 A @ T_C = 25 °C - Supports high-current half/full-bridge legs without forced cooling
Q_g	35 nC - Enables efficient 100–300 kHz switching with standard gate drivers
t_rr	105 ns @ T_j = 25 °C - Reduces turn-on loss and EMI in synchronous rectification
R_thj-case	3.6 °C/W - Allows 9.7 W dissipation at ΔT = 35 °C case-to-heatsink rise
E_AS	360 mJ - Sustains single-pulse inductive energy without failure in UPS or PFC stages

Pinout & Package

Supplied in TO-220FP package: insulated plastic case with internal heatsink tab, 3-pin vertical mounting, creepage distance compliant for 2.5 kV RMS isolation between leads and heatsink.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	Main high-side power path; electrically connected to heatsink tab; requires isolation when mounted
G (Pin 1)	Gate	Control terminal; Zener-protected (±25 V rating); low 1.8 Ω intrinsic resistance reduces ringing
S (Pin 3)	Source	Reference node for gate drive; return path for load current and body diode conduction

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 105 ns, Q_rr = 0.47 µC enables zero-voltage switching in phase-shifted full-bridge converters
Low R_DS(on) per area	115 mΩ typ. at 600 V improves power density vs. prior MDmesh generations in same footprint
100% avalanche tested	Guarantees robustness against unclamped inductive transients in motor drives and UPS systems
Zener-protected gate	±25 V V_GS rating prevents gate oxide damage during layout parasitic coupling or ESD events
High dv/dt ruggedness	100 V/ns immunity allows reliable operation in noisy high-dV/dt environments like SiC gate driver circuits

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Half-bridge output stage in 3 kW servo amplifier driving 400 V AC induction motors.

IC Role / Device Role / Timing Role: High-side switching element handling 25 A peak load current with 100 kHz PWM and ZVS transition.

Use Value: Low Q_rr and fast t_rr reduce shoot-through risk and conduction loss during commutation.

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter for 48 V server rack power distribution.

IC Role / Device Role / Timing Role: Main power switch operating in soft-switching mode with 300 kHz fundamental frequency.

Use Value: C_oss,eq = 225 pF and low R_DS(on) minimize capacitive loss and improve light-load efficiency.

Uninterruptible Power Supplies

EV Onboard Chargers

Use Scenario: Inverter leg in 5 kVA double-conversion UPS delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in full-bridge inverter with active clamp snubber.

Use Value: 100% avalanche rating and 360 mJ E_AS withstand repetitive line surges and battery reversal transients.

Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBC converting AC grid to 450 V DC battery bus.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65–100 kHz.

Use Value: Low gate charge (35 nC) reduces driver power consumption and thermal stress on isolated gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF24NM60ND	600 V, 180 mΩ R_DS(on), 24 A ID, MDmesh II generation, higher Q_rr (1.1 µC)	Lower efficiency in ZVS topologies due to slower diode recovery and higher conduction loss	Select when cost sensitivity outweighs efficiency targets and dv/dt requirements are <50 V/ns
IPP60R190C7	600 V, 190 mΩ R_DS(on), 21 A ID, CoolMOS C7, Q_rr = 0.38 µC, no integrated Zener protection	Lacks gate Zener; requires external clamping; lower R_DS(on) per area but higher C_iss (1750 pF)	Prefer where gate drive design includes discrete protection and layout minimizes V_GS overshoot

Compared with STF24NM60ND and IPP60R190C7, STF33N60DM6 offers superior dv/dt ruggedness (100 V/ns), integrated gate Zener, and lowest R_DS(on) among 600 V TO-220FP MOSFETs-making it optimal for high-reliability, high-frequency industrial converters.

Availability

STF33N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STF33N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STF33N60DM6 belongs to the MDmesh DM6 high-voltage power MOSFET product line, developed specifically for high-efficiency, high-frequency switching in telecom PSUs, solar inverters, and industrial motor controls.

FAQ

What is the maximum safe operating temperature for STF33N60DM6?

The junction temperature must not exceed 150 °C under steady-state operation. At T_C = 100 °C, the continuous drain current is derated to 16 A. Thermal design must ensure R_thj-case = 3.6 °C/W is maintained via proper heatsink interface and mounting pressure.

Does STF33N60DM6 require external gate protection?

No-STF33N60DM6 integrates Zener protection on the gate, rated for ±25 V V_GS. This eliminates the need for external TVS diodes in most layouts, though careful PCB routing to minimize gate loop inductance remains essential for noise immunity.

How does the body diode performance compare to standard MOSFETs?

Its body diode achieves t_rr = 105 ns and Q_rr = 0.47 µC at 25 °C-over 50% lower Q_rr than legacy MDmesh II devices. This directly reduces turn-on loss and EMI in synchronous rectifier and bridge configurations.

Can STF33N60DM6 be used in avalanche mode continuously?

No-it is 100% tested for single-pulse avalanche (E_AS = 360 mJ), not rated for repetitive avalanche operation. Continuous avalanche stresses exceed SOA limits; system design must avoid unclamped inductive conditions during normal operation.

STF33N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 128mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF33N60DM6 FAQ

1.How can I place an order for STF33N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF33N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF33N60DM6 reliable?

The price and inventory of STF33N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF33N60DM6 is usually 5 days.

3.What payment methods are accepted for STF33N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF33N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF33N60DM6?

STF33N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF33N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF33N60DM6?

For technical support, including STF33N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF33N60DM6 requirements.

6.How does Aetrix verify that STF33N60DM6 is sourced from the original manufacturer or authorized distributors?

All STF33N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF33N60DM6 meets industry standards.

7.What is the process for return or replacement of STF33N60DM6?

All STF33N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STF33N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF33N60DM6 part is unused and in its original packaging.

Return procedure for STF33N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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