STMicroelectronics STF33N60M2

Overview

STF33N60M2 from STMicroelectronics is an N-channel 600 V, 125 mΩ (max), 26 A Power MOSFET in TO-220FP package, built on MDmesh M2 technology for high-efficiency switching converters. It features 45.5 nC total gate charge, 85 pF output capacitance, and 100% avalanche tested ruggedness-optimized for LLC resonant converters operating at high frequency and high voltage.

For engineers reviewing the STF33N60M2 datasheet, STF33N60M2 pinout, STF33N60M2 application, or STF33N60M2 equivalent, key selection criteria include R_DS(on) stability over temperature, C_oss profile under 480 V bias, Zener-protected gate robustness, and SOA compliance up to 104 A pulsed drain current.

Technical Context

This device employs a strip-layout MDmesh M2 vertical structure to minimize conduction loss while maintaining low C_oss (85 pF typ.) and optimized C_oss,eq (135 pF) across 0–480 V, enabling efficient soft-switching in resonant topologies. Its 50 V/ns dv/dt ruggedness and 15 V/ns diode recovery dv/dt rating ensure reliable operation in fast-switching inductive loads.

The integrated Zener-protected gate withstands ±25 V V_GS, and its 2–4 V gate threshold (V_GS(th)) supports standard 10 V gate drive. The 3.6 °C/W R_thJC thermal resistance in TO-220FP enables high-power density designs with external heatsink mounting via the insulated tab.

Key Specifications

Pinout & Package

STF33N60M2 is housed in a TO-220FP (Type B) package with insulated tab, enabling direct mounting to heatsinks without electrical isolation hardware. The plastic body provides creepage/clearance compliant with 2.5 kV RMS insulation rating between leads and heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP33N60M2 and STW33N60M2, STF33N60M2 trades thermal performance for intrinsic isolation and compact footprint-making it optimal for space-constrained, safety-critical 300–800 W AC-DC supplies where board-level isolation must be minimized.

Availability

STF33N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial AC-DC power supplies, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF33N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF33N60M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in server PSUs, telecom infrastructure, and EV charging systems.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STF33N60M2 supports 16 A continuous drain current when the case temperature (T_C) is maintained at 100 °C, as specified in Table 1 of DS9497 Rev 4. This rating accounts for thermal derating due to junction-to-case thermal resistance (3.6 °C/W) and maximum junction temperature limit of 150 °C.

Does STF33N60M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STF33N60M2 includes a monolithic source-drain body diode rated for 26 A continuous and 104 A pulsed current. Key recovery specs include t_rr = 375 ns, Q_rr = 5.6 µC, and I_RRM = 30 A at T_J = 25 °C, with degradation to t_rr = 478 ns and Q_rr = 7.7 µC at T_J = 150 °C per Table 7.

Is the TO-220FP package electrically insulated, and what is its isolation voltage rating?

Yes, the TO-220FP (Type B) package features an insulated metal tab rated for 2.5 kV RMS insulation withstand voltage between all three leads and an external heatsink for 1 second at T_C = 25 °C (Table 1, V_ISO). This eliminates need for insulating pads in many safety-compliant designs.

How does the MDmesh M2 technology improve performance over standard planar MOSFETs?

MDmesh M2 uses a high-density strip layout and optimized vertical charge-balancing structure to achieve 108 mΩ typical R_DS(on) at 600 V-~30% lower than comparable planar devices-while maintaining low C_oss (85 pF) and high dv/dt ruggedness (50 V/ns), directly enabling higher efficiency and power density in resonant converters.