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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF33N60M6

Name: STF33N60M6
Brand: STMicroelectronics
SKU: STF33N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF33N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF33N60M6.pdf

Description:: MOSFET N-CH 600V 25A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,872

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Product details

Overview

STF33N60M6 from STMicroelectronics is an N-channel 600 V, 105 mΩ typ., 25 A MDmesh™ M6 superjunction power MOSFET in TO-220FP package, optimized for high-efficiency switching in LLC and boost PFC converters with 100% avalanche tested ruggedness and Zener-protected gate.

For engineers reviewing the STF33N60M6 datasheet, STF33N60M6 pinout, STF33N60M6 application, or STF33N60M6 equivalent, key selection criteria include R_DS(on) of 125 mΩ max at 10 V, 33.4 nC total gate charge, 15 V/ns diode recovery dv/dt capability, and 2.5 kV insulation withstand voltage for isolated heatsink mounting.

Technical Context

This MOSFET employs ST's MDmesh™ M6 silicon technology, delivering improved R_DS(on)/area over prior generations while maintaining low gate input resistance (1.5 Ω) and enhanced switching behavior-evidenced by 19.5 ns turn-on delay and 7.5 ns fall time under 4.7 Ω gate drive.

Its integrated source-drain diode exhibits 1.6 V forward voltage at 25 A and 265 ns reverse recovery time at 25 A/100 A/µs, enabling robust operation in hard-switched and resonant topologies without external snubbing in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus applications with margin for transient overvoltage
R_DS(on) max	125 mΩ at V_GS = 10 V, I_D = 12.5 A - enables low conduction loss at 25 A continuous drain current
Q_g	33.4 nC - determines gate drive power requirement and influences switching speed with standard 4.7 Ω resistor
E_AS	500 mJ - quantifies single-pulse avalanche energy handling for unclamped inductive switching reliability
R_thj-case	3.6 °C/W - allows 35 W dissipation at 25 °C case temperature, supporting thermally constrained PCB-mount designs
V_ISO	2.5 kV RMS - permits direct mounting to insulated heatsinks without additional isolation hardware

Pinout & Package

TO-220FP package: insulated tab, vertical lead orientation, single-row 3-pin configuration with integral heatsink interface. Mounting hole diameter 3.0–3.2 mm; outline complies with JEDEC TO-220FP standard.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 2)	Drain	High-voltage power terminal connected to internal die backside; electrically tied to insulated metal tab
G (Pin 1)	Gate	Control input requiring ≤ ±25 V drive; low 1.5 Ω intrinsic resistance minimizes gate loop oscillation risk
S (Pin 3)	Source	Power return path and reference for gate drive; forms common node with body diode cathode

Key Features

Feature	Design Value
Reduced switching losses	Low Q_gd/Q_g ratio (16.3/33.4 nC) and fast 7.5 ns fall time minimize overlap loss in hard-switched SMPS
Lower R_DS(on) per area vs previous generation	105 mΩ typ. at 600 V - improves power density and thermal performance over MDmesh™ M5 equivalents
Low gate input resistance	1.5 Ω intrinsic gate resistance - reduces need for external gate damping and stabilizes high-frequency gate waveforms
100% avalanche tested	Guaranteed 4 A repetitive avalanche current and 500 mJ single-pulse energy - ensures robustness in inductive load transients
Zener-protected gate	±25 V absolute maximum V_GS with integrated protection - prevents ESD-induced gate oxide failure during handling and layout

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 300–500 W server PSU LLC half-bridge with 300–400 V DC input.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 100–300 kHz with zero-voltage switching (ZVS) capability.

Use Value: Low C_oss (128 pF) and 269 pF C_oss,eq enable reliable ZVS across wide load range; 15 V/ns diode dv/dt rating sustains clean turn-off under resonant stress.

Use Scenario: Active switch in continuous conduction mode (CCM) boost PFC front-end for industrial AC-DC supplies.

IC Role / Device Role / Timing Role: Main power switch modulated at line frequency harmonics (20–100 kHz) to shape input current.

Use Value: 125 mΩ R_DS(on) limits conduction loss at 25 A peak; 100% avalanche test ensures survival during AC line surges and startup inrush.

Industrial Motor Drive Inverter

Telecom Rectifier Module

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter stage for HVAC compressor drives (2–5 kW).

IC Role / Device Role / Timing Role: High-voltage switching element in 600 V DC link topology with freewheeling via internal body diode.

Use Value: 1.6 V V_SD at 25 A and 265 ns t_rr reduce diode conduction loss and commutation spikes; TO-220FP insulation supports direct heatsink mounting.

Use Scenario: Primary switch in 48 V telecom rectifier with universal AC input and active hold-up capability.

IC Role / Device Role / Timing Role: Fast-switching device in dual-active-bridge or phase-shifted full-bridge architecture.

Use Value: 50 V/ns MOSFET dv/dt ruggedness prevents false turn-on during high dV/dt transitions; 2.5 kV V_ISO meets reinforced insulation requirements for telecom safety standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF24N60M2	600 V, 180 mΩ max, 24 A, MDmesh™ M2 - higher R_DS(on), lower Q_g (22 nC), no Zener gate protection	Less efficient at high current; suitable only where thermal margin exists and gate drive is highly controlled	Select when cost sensitivity outweighs efficiency targets and avalanche stress is minimal
IPP60R190C7	600 V, 190 mΩ max, 21 A, CoolMOS™ C7 - higher R_DS(on), lower C_iss (1350 pF), no insulation rating	Requires external isolation for heatsink mounting; less rugged under unclamped inductive loads	Prefer where ultra-low input capacitance is critical and system-level isolation is already implemented

Compared with STF24N60M2 and IPP60R190C7, STF33N60M6 delivers superior conduction efficiency at 25 A, guaranteed avalanche robustness, and built-in isolation-making it optimal for space-constrained, high-reliability industrial and telecom power stages where thermal and transient margins are tight.

Availability

STF33N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF33N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STF33N60M6 belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in server PSUs, industrial power supplies, and renewable energy inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF33N60M6 supports 15.8 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12636 Rev 2. This derating reflects thermal limitations imposed by the 3.6 °C/W junction-to-case resistance and maximum 150 °C junction temperature.

Does the TO-220FP package provide electrical isolation between the drain and heatsink?

Yes-the TO-220FP package features an insulated metal tab rated for 2.5 kV RMS insulation withstand voltage between all three leads and the external heatsink (per Table 1). This eliminates the need for insulating pads or sleeves in most industrial mounting configurations.

How does the Zener-protected gate improve reliability in real-world designs?

The integrated Zener protection clamps gate-source voltage to ±25 V, preventing oxide breakdown during ESD events, gate driver overshoot, or layout-induced ringing. This eliminates field failures linked to gate stress without requiring external TVS diodes in typical 12–15 V gate drive systems.

Can STF33N60M6 replace STF22NM60N in an existing design?

No-STF22NM60N is an older MDmesh™ N-channel MOSFET with 22 A rating, 220 mΩ R_DS(on), and no Zener gate protection. While pin-compatible, STF33N60M6 offers 14% lower R_DS(on), higher current, and enhanced ruggedness, but requires verification of gate drive strength due to its higher 33.4 nC Q_g.

STF33N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.4 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1515 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF33N60M6 FAQ

1.How can I place an order for STF33N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF33N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF33N60M6 reliable?

The price and inventory of STF33N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF33N60M6 is usually 5 days.

3.What payment methods are accepted for STF33N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF33N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF33N60M6?

STF33N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF33N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF33N60M6?

For technical support, including STF33N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF33N60M6 requirements.

6.How does Aetrix verify that STF33N60M6 is sourced from the original manufacturer or authorized distributors?

All STF33N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF33N60M6 meets industry standards.

7.What is the process for return or replacement of STF33N60M6?

All STF33N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STF33N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF33N60M6 part is unused and in its original packaging.

Return procedure for STF33N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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