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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF33N65M2

Name: STF33N65M2
Brand: STMicroelectronics
SKU: STF33N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF33N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF33N65M2.pdf

Description:: MOSFET N-CH 650V 24A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:180

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Product details

Overview

STF33N65M2 from STMicroelectronics is an N-channel 650 V, 117 mΩ typ., 24 A MDmesh™ M2 Power MOSFET in TO-220FP package, designed for high-efficiency switching converters. It delivers low gate charge (41.5 nC), optimized Coss profile (75 pF), 100% avalanche tested performance, and Zener-protected gate, enabling robust operation in hard-switched PFC and LLC resonant stages.

For engineers reviewing the STF33N65M2 datasheet, STF33N65M2 pinout, STF33N65M2 application, or STF33N65M2 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (RthJC = 3.68 °C/W) in TO-220FP mounting configurations.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its low Crss (2 pF) and controlled Coss eq. (380 pF) minimize Miller effect and enable clean turn-off in high-frequency topologies.

The integrated source-drain diode features fast reverse recovery (trr = 426 ns at TJ = 25 °C) and low Qrr (7 µC), supporting quasi-resonant and zero-voltage switching designs. Gate threshold voltage (VGS(th) = 2–4 V) ensures reliable enhancement-mode control with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with 50% safety margin.
RDS(on) max	140 mΩ - Limits conduction loss to ≤ 80 W at ID = 24 A, TC = 25 °C; enables compact heatsink design.
Qg	41.5 nC - Reduces gate drive power requirement and allows use of lower-cost 1-A peak gate drivers.
Coss	75 pF - Low output capacitance minimizes turn-on energy loss (EOSS = 14 µJ at VDS = 400 V).
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during hard switching without false turn-on or latch-up.
EAS	780 mJ - Supports single-pulse unclamped inductive switching events without junction failure.
RthJC	3.68 °C/W - Enables 190 W power dissipation at TC = 25 °C; critical for thermally constrained TO-220FP layouts.

Pinout & Package

STF33N65M2 uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heat sink tab, no metal mounting screw hole, intended for PCB surface-mounting with thermal pad soldering. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S); Drain connected internally to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 10 V drive for full RDS(on) specification; Zener-protected against ±25 V transients.
Pin 2 (D)	Drain terminal / Heat sink tab	Main high-side switching node; electrically connected to insulated metal tab; must be isolated from chassis ground unless system design permits.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current (24 A continuous); forms return path for internal body diode conduction.

Key Features

Feature	Design Value
MDmesh M2 technology	Combines ultra-low RDS(on) × area with high-voltage blocking, achieving 117 mΩ @ 650 V in TO-220FP footprint.
Extremely low gate charge	41.5 nC total charge enables <500 kHz operation with minimal driver losses and reduced EMI generation.
Optimized Coss profile	75 pF Coss + 380 pF Coss eq. ensures predictable turn-on timing and low capacitive switching loss across 0–520 V range.
100% avalanche tested	Each unit passes single-pulse EAS = 780 mJ test at TJ = 25 °C, guaranteeing ruggedness in overvoltage fault conditions.
Zener-protected gate	Integrated gate oxide protection clamps transient VGS to ±25 V, eliminating need for external gate Zener in most SMPS designs.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Active clamp forward or LLC resonant converter in 1–3 kW telecom rectifier modules.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus with 100–300 kHz switching frequency.

Use Value: Low Coss and 50 V/ns dv/dt ruggedness prevent spurious turn-on during transformer reset, improving reliability under line surge.

Use Scenario: High-density 80 PLUS Titanium server PSU with digital PFC + LLC stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC operating at 65–100 kHz.

Use Value: 117 mΩ RDS(on) typ. reduces conduction loss by 18% vs. legacy 600 V MOSFETs, directly improving full-load efficiency.

Solar Microinverters

EV Onboard Chargers

Use Scenario: H-bridge inverter stage converting 40–60 V PV input to 230 V AC grid interface.

IC Role / Device Role / Timing Role: High-side switch in bidirectional half-bridge topology with synchronous rectification.

Use Value: Fast body diode (trr = 426 ns) and low Qrr (7 µC) minimize dead-time losses and reduce thermal stress during freewheeling.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC converting 400 V battery to 14 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge (PSFB) topology operating at 100–200 kHz.

Use Value: 3.68 °C/W RthJC allows direct PCB thermal pad mounting without mechanical fasteners-reducing assembly cost and improving thermal repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB33N65M2	D²PAK package; RthJC = 0.66 °C/W; higher thermal performance but requires surface-mount reflow process.	Better suited for automated SMT production lines and space-constrained board layouts where thermal pad area is available.	Select when PCB assembly supports D²PAK reflow and thermal management prioritizes junction-to-case transfer over mechanical mounting simplicity.
STI33N65M2	I²PAK package; RthJC = 0.66 °C/W; identical die but different leadframe geometry and creepage/clearance dimensions.	Preferred for through-hole wave-soldered industrial controls requiring higher isolation voltage margins (e.g., >3 kV RMS).	Choose when legacy through-hole manufacturing is required and insulation withstand voltage (VISO = 2.5 kV) must be maintained with larger creepage distances.

Compared with STB33N65M2 and STI33N65M2, STF33N65M2 trades off thermal performance (RthJC = 3.68 °C/W) for mechanical simplicity and insulation integrity in TO-220FP-making it optimal for prototyping, low-volume industrial SMPS, and designs where manual mounting and chassis isolation are priorities.

Availability

STF33N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and EV onboard chargers requiring stable component supply with guaranteed long-term sourcing.

Supply support for STF33N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with over 45 years of analog and power device innovation.

STF33N65M2 belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching converters in industrial, computing, and renewable energy applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF33N65M2 supports 15 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS10776 Rev 2. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does STF33N65M2 require external gate protection?

No external gate Zener is required-the device integrates Zener protection between gate and source, rated for ±25 V transient clamping per absolute maximum ratings. This eliminates discrete protection components in most 10 V gate-drive applications.

How does its body diode performance compare to standard 650 V MOSFETs?

STF33N65M2 exhibits trr = 426 ns and Qrr = 7 µC at TJ = 25 °C-up to 40% lower Qrr than non-optimized 650 V devices-due to tailored drift region doping in MDmesh M2. This reduces switching loss and EMI in hard-commutated freewheeling paths.

Can STF33N65M2 be used in avalanche-mode operation?

Yes-every unit undergoes 100% single-pulse avalanche testing at EAS = 780 mJ (TJ = 25 °C). Repetitive avalanche is not characterized, but the device supports controlled unclamped inductive switching events typical in flyback and active clamp circuits.

STF33N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1790 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF33N65M2 FAQ

1.How can I place an order for STF33N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF33N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF33N65M2 reliable?

The price and inventory of STF33N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF33N65M2 is usually 5 days.

3.What payment methods are accepted for STF33N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF33N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF33N65M2?

STF33N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF33N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF33N65M2?

For technical support, including STF33N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF33N65M2 requirements.

6.How does Aetrix verify that STF33N65M2 is sourced from the original manufacturer or authorized distributors?

All STF33N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF33N65M2 meets industry standards.

7.What is the process for return or replacement of STF33N65M2?

All STF33N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF33N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF33N65M2 part is unused and in its original packaging.

Return procedure for STF33N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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