STMicroelectronics STF34NM60N

Overview

STF34NM60N from STMicroelectronics is an N-channel 600 V, 0.092 Ω typ. R_DS(on), 31.5 A MDmesh™ II Power MOSFET in TO-220FP package. It delivers low gate charge (84 nC), high avalanche ruggedness (345 mJ), and 250 W total dissipation at T_C = 25 °C, serving as a primary switching device in high-efficiency AC-DC and DC-DC converters.

For engineers reviewing the STF34NM60N datasheet, STF34NM60N pinout, STF34NM60N application, or STF34NM60N equivalent, key selection criteria include its 600 V V_DS, 0.092 Ω R_DS(on) at 10 V_GS, 84 nC Q_g, 15 V/ns diode recovery dv/dt ruggedness, and TO-220FP thermal resistance of 3.1 °C/W.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 2722 pF C_iss, 173 pF C_oss, and 1.75 pF C_rss enable fast, controlled switching with low EMI generation in hard-switched topologies.

The integrated source-drain diode exhibits 412 ns trr and 8 µC Q_rr at 31.5 A, supporting moderate-frequency synchronous rectification and flyback snubberless operation. The device is rated for 150 °C junction temperature and features 2500 V RMS insulation between leads and heat sink.

Key Specifications

Pinout & Package

TO-220FP package: insulated flange, single-row 3-pin through-hole mounting, 3.1 °C/W thermal resistance, 2500 V RMS isolation rating, and footprint compatible with standard TO-220 heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7, STF34NM60N provides certified isolation and identical R_DS(on)/Q_g, simplifying safety-compliant design; versus STW34NM60ND, it trades diode softness and surge rating for lower cost and TO-220FP board space savings.

Availability

STF34NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for STF34NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and industrial motor control inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF34NM60N supports 20 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FP package and ensures safe operation within the 150 °C maximum junction temperature limit under realistic heatsink conditions.

Does this MOSFET require a gate resistor for stability?

Yes - due to its 2.9 Ω intrinsic gate resistance and low C_rss, a series gate resistor (typically 5–22 Ω) is required to dampen ringing and prevent spurious turn-on during high dv/dt transitions. Layout parasitics and driver strength must be co-optimized with this resistor value per Figure 18 waveforms.

Can STF34NM60N replace STP34NF60 in existing designs?

No - although both are 600 V N-channel MOSFETs in TO-220 packages, STF34NM60N uses MDmesh™ II technology (0.092 Ω, 84 nC), while STP34NF60 uses older planar technology (0.11 Ω, 110 nC). Pinout is identical, but gate drive requirements and switching behavior differ significantly; redesign validation is mandatory.

Is the TO-220FP flange electrically isolated from all pins?

Yes - the TO-220FP package features full electrical isolation between the metal flange (drain-connected) and the molded plastic body. The 2500 V RMS insulation rating (Table 2, V_ISO) confirms isolation from all three leads to external heatsink, enabling direct mounting without insulating hardware in grounded-drain configurations.