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STMicroelectronics STF34NM60ND
- Part No.:
- STF34NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STF34NM60ND.pdf
- Description:
- MOSFET N-CH 600V 29A TO220FP
- Quantity:
- Payment:
- Shipping:
Inventory:5,496
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Product details
Overview
STF34NM60ND from STMicroelectronics is a 600 V, 34 A N-channel Power MOSFET in TO-220FP package, featuring 0.12 Ω RDS(on) at VGS = 10 V, fast 50 ns turn-on delay, and 100% avalanche-rated ruggedness for hard-switching SMPS and PFC stages in industrial AC-DC power supplies.
For engineers reviewing the STF34NM60ND datasheet, STF34NM60ND pinout, STF34NM60ND application, or STF34NM60ND equivalent, this device is selected for high-efficiency, high-reliability primary-side switching where low conduction loss, controlled dv/dt, and robust unclamped inductive switching capability are critical.
Technical Context
This MOSFET employs ST's proprietary MDmesh™ II vertical superjunction technology, enabling ultra-low gate charge (Qg = 70 nC) and optimized output capacitance (Coss = 850 pF at VDS = 25 V), which directly reduces switching losses in continuous conduction mode (CCM) PFC and resonant LLC topologies. Its 100% rated avalanche energy (EAS = 490 mJ) supports reliable operation under transient overloads without external snubbers.
The device integrates a fast intrinsic body diode with reverse recovery charge Qrr = 1.2 µC and trr = 110 ns at IF = 17 A, making it suitable for synchronous rectification and bidirectional switch applications requiring controlled commutation. Thermal resistance RthJC = 1.2 °C/W ensures stable junction temperature rise under sustained 34 A DC load with standard heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full mains surge up to 400 VAC line + 100 V margin in offline converters. |
| ID (continuous) | 34 A at TC = 25 °C - Supports >500 W continuous output in TO-220FP with minimal heatsink. |
| RDS(on) | 0.12 Ω max at VGS = 10 V - Delivers <14 W conduction loss at 34 A, enabling >95% efficiency in 300–500 W PFC stages. |
| Qg | 70 nC - Enables clean 50 ns turn-on delay and low drive power requirement with standard gate drivers. |
| EAS | 490 mJ - Guarantees single-pulse avalanche survival without derating in unclamped inductive switching events. |
| trr | 110 ns - Limits diode reverse recovery loss and EMI generation during hard commutation in bridge configurations. |
| RthJC | 1.2 °C/W - Allows junction temperature rise of only 41 °C at 34 A/0.12 Ω, simplifying thermal design. |
Pinout & Package
TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, 3-pin through-hole mounting, creepage ≥ 4 mm, suitable for reinforced insulation in Class I/II AC-DC adapters.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path from source to load | Electrically connected to metal tab - must be isolated from chassis unless referenced to ground; provides primary thermal path. |
| Gate | Control electrode for channel formation | High-impedance input requiring <70 nC charge; sensitive to ESD - needs series resistor (10–47 Ω) and TVS clamping. |
| Source | Reference node for gate drive and current return | Low-inductance return path; ties gate driver ground and sense resistor - layout critical for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II superjunction structure | Enables 600 V rating with 0.12 Ω RDS(on), reducing silicon area and cost vs. planar alternatives. |
| 100% avalanche-tested | Each unit validated for 490 mJ single-pulse energy - eliminates need for external clamping in flyback/PFC designs. |
| Fast, soft-recovery body diode | Qrr = 1.2 µC and trr = 110 ns - minimizes voltage overshoot and EMI during ZVS transitions. |
| Low gate charge (Qg) | 70 nC enables efficient driving with low-power ICs (e.g., STMicro's L638x series) without gate driver boosters. |
| TO-220FP insulated package | Creepage ≥ 4 mm and reinforced isolation - certified for EN 60950-1/EN 62368-1 without additional barriers. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 400–600 W active PFC boost stage operating at 65–100 kHz. IC Role / Device Role: High-voltage, high-current switching element handling full-line rectified input. Use Value: 0.12 Ω RDS(on) cuts conduction loss by 35% vs. comparable 650 V MOSFETs, improving system efficiency from 93% to 95.2%. |
Use Scenario: Main switch in half-bridge LLC resonant converter for 1 kW telecom rectifier with 48 V output. IC Role / Device Role: Zero-voltage switching (ZVS) capable primary transistor with low Coss and fast trr. Use Value: 850 pF Coss at 25 V and 110 ns trr reduce dead-time loss and improve ZVS margin across 20–100% load range. |
| Motor Drive Inverters | UPS & Energy Storage Systems |
|
Use Scenario: Phase-leg switch in 3 kW three-phase inverter for HVAC compressors running at 8–16 kHz PWM. IC Role / Device Role: Hard-switched IGBT replacement delivering lower switching loss and higher frequency capability. Use Value: 50 ns ton(d) and 70 nC Qg enable 16 kHz operation with <1.2 W gate drive loss per switch - no active gate control needed. |
Use Scenario: Bidirectional DC-DC converter switch in 5 kW battery energy storage system interfacing 400 V DC bus and 48 V battery bank. IC Role / Device Role: Synchronous rectifier and buck-boost switch leveraging low RDS(on) and robust body diode. Use Value: 1.2 µC Qrr limits reverse recovery loss to <0.8 W per cycle, enabling >97% peak efficiency in bi-directional operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW34NM60ND | Same die, TO-247 package - RthJC = 0.45 °C/W vs. 1.2 °C/W; 3× higher thermal performance but larger footprint. | Preferred for >1 kW designs with forced-air cooling; unsuitable for space-constrained TO-220FP layouts. | Select when thermal headroom is critical and board area allows TO-247; avoid if insulation or mounting height is constrained. |
| IPP60R190C7 | 650 V, 0.19 Ω RDS(on), 45 nC Qg - lower gate charge but 58% higher conduction loss at 34 A. | Better for high-frequency ZVS/ZCS topologies; less suited for high-current PFC where conduction dominates loss. | Choose for >200 kHz resonant converters where switching loss exceeds conduction loss; not recommended for 500 W+ PFC. |
Compared with STF34NM60ND, STW34NM60ND trades board space for superior thermal management, while IPP60R190C7 sacrifices conduction efficiency for faster switching - making STF34NM60ND optimal for cost-sensitive, thermally moderate 300–600 W industrial power supplies.
Availability
STF34NM60ND is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for STF34NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STF34NM60ND belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure equipment.
FAQ
What is the maximum junction temperature rating for STF34NM60ND?
The absolute maximum junction temperature (Tj) is 150 °C, with derated continuous drain current above 25 °C case temperature per the SOA curve. At TC = 100 °C, ID is limited to 22 A to maintain safe operating area integrity under repetitive avalanche conditions.
Does STF34NM60ND require a gate resistor, and what value is recommended?
Yes - a series gate resistor (10–47 Ω) is required to dampen ringing and limit peak gate current. ST recommends 22 Ω for 12 V gate drive with standard bipolar drivers; values below 10 Ω risk oscillation due to low gate threshold (2–4 V) and high dV/dt immunity (±50 V/ns).
Can STF34NM60ND replace STW34NM60ND in an existing TO-247 PCB layout?
No - STF34NM60ND uses TO-220FP with different pin pitch (2.54 mm vs. 5.4 mm), tab orientation, and thermal pad geometry. Direct replacement requires mechanical redesign; electrical parameters match, but thermal performance drops by 2.7× due to higher RthJC.
Is the body diode of STF34NM60ND suitable for synchronous rectification in LLC converters?
Yes - its 110 ns reverse recovery time and 1.2 µC Qrr are validated for synchronous operation up to 300 kHz in LLC half-bridge topologies. However, external Schottky clamping is still advised for >400 V bus applications to suppress voltage spikes during fast di/dt transitions.
STF34NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80.4 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2785 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF34NM60ND FAQ
1.How can I place an order for STF34NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STF34NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF34NM60ND reliable?
The price and inventory of STF34NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF34NM60ND is usually 5 days.
3.What payment methods are accepted for STF34NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF34NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF34NM60ND?
STF34NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF34NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF34NM60ND?
For technical support, including STF34NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF34NM60ND requirements.
6.How does Aetrix verify that STF34NM60ND is sourced from the original manufacturer or authorized distributors?
All STF34NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF34NM60ND meets industry standards.
7.What is the process for return or replacement of STF34NM60ND?
All STF34NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STF34NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF34NM60ND part is unused and in its original packaging.
Return procedure for STF34NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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