STMicroelectronics STF35N60DM2

Overview

STF35N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET with 600 V V_DS, 0.094 Ω typ. R_DS(on), 28 A continuous drain current, and fast-recovery body diode (t_rr = 120 ns at T_j = 25 °C). It is engineered for ZVS phase-shift converters and full-bridge topologies in industrial SMPS.

For engineers reviewing the STF35N60DM2 datasheet, STF35N60DM2 pinout, STF35N60DM2 application, or STF35N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 650 mJ), dv/dt immunity (50 V/ns), gate charge (Q_g = 54 nC), and Zener-protected gate-source junction (±30 V).

Technical Context

This MDmesh™ DM2 device integrates a fast-recovery body diode with low Q_rr (572 nC) and t_rr, enabling reduced switching losses in hard- and soft-switching topologies. Its low C_iss (2400 pF) and C_rss (2.8 pF) support high-frequency operation up to 200 kHz.

The MOSFET features intrinsic Zener protection on the gate-source terminals (V_(BR)GSO = ±30 V) and is 100% avalanche tested. Thermal resistance is R_thj-case = 3.1 °C/W, supporting 40 W total dissipation at T_case = 25 °C in TO-220FP package.

Key Specifications

Pinout & Package

TO-220FP package: insulated tab, single-row 3-pin through-hole mounting, creepage distance ≥4 mm, rated for 2.5 kV_RMS insulation between leads and heat sink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW35N60DM2 and IPP60R099C7, STF35N60DM2 uniquely combines insulated TO-220FP packaging, integrated gate Zener, and MDmesh™ DM2 diode performance-making it optimal for cost-sensitive, medium-power industrial SMPS where safety isolation and component count reduction are critical.

Availability

STF35N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, phase-shifted full-bridge converters, motor drive inverters, and high-voltage PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for STF35N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ DM2 series targets high-efficiency, high-frequency power conversion, specifically optimizing for low Q_rr, low R_DS(on), and robust avalanche capability in 500–650 V applications.

FAQ

Is STF35N60DM2 suitable for synchronous rectification?

No. While its body diode has fast recovery (t_rr = 120 ns), STF35N60DM2 is not optimized for synchronous rectifier operation due to lack of dedicated low-threshold gate drive compatibility and absence of dual-die or logic-level variants. It functions primarily as a primary-side switch in hard- or soft-switched topologies.

What is the maximum continuous case temperature for reliable operation?

The maximum continuous case temperature is 100 °C, at which the rated continuous drain current drops to 17 A (per Table 2). Operation above this requires derating per the SOA curve (Figure 2), and thermal design must maintain T_case ≤ 100 °C to avoid exceeding T_j = 150 °C limit.

Does the TO-220FP package require electrical isolation from the heatsink?

Yes. The TO-220FP package features an insulated tab rated for 2.5 kV_RMS isolation. Direct mounting to a grounded heatsink is permitted only if the drain (tab) is electrically referenced to system ground; otherwise, insulating pads or shoulder washers must be used to preserve isolation integrity.

Can STF35N60DM2 replace STF20NM60ND in existing designs?

Not directly. STF20NM60ND is a 600 V, 20 A SuperMESH™ device with higher R_DS(on) (0.22 Ω) and slower diode (t_rr ≈ 250 ns). STF35N60DM2 offers 40% lower R_DS(on) and 52% faster t_rr, but gate charge increases from 37 nC to 54 nC-requiring verification of gate driver strength and layout parasitics before substitution.