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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF38N65M5

Name: STF38N65M5
Brand: STMicroelectronics
SKU: STF38N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF38N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF38N65M5.pdf

Description:: MOSFET N-CH 650V 30A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF38N65M5 from STMicroelectronics is an N-channel 650 V, 30 A Power MOSFET based on MDmesh M5 vertical process technology in TO-220FP package, featuring 73 mΩ typical R_DS(on), 15 V/ns diode recovery dv/dt capability, and 100% avalanche tested for ruggedness - used as primary switch in high-efficiency 1 kW+ AC-DC SMPS and PFC stages.

For engineers reviewing the STF38N65M5 datasheet, STF38N65M5 pinout, STF38N65M5 application, or STF38N65M5 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, unclamped inductive switching robustness (E_AS = 660 mJ), thermal resistance (R_thJC = 3.6 °C/W), and fast reverse recovery (Q_rr = 6.6 µC at 25 °C).

Technical Context

This device implements a high-voltage superjunction MOSFET architecture with optimized charge balancing in the drift region, enabling low conduction loss without sacrificing switching speed. Its MDmesh M5 structure delivers <73 mΩ R_DS(on) at 650 V rating while maintaining 50 V/ns MOSFET dv/dt ruggedness under hard-switching conditions.

The integrated body diode exhibits soft reverse recovery (trr = 382 ns, Qrr = 6.6 µC) and supports ZVS-capable topologies. Gate threshold voltage is tightly distributed (3–5 V), and intrinsic gate resistance is 2.4 Ω - critical for EMI-controlled turn-on/turn-off timing in high-frequency resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 400 VAC input rectified systems with ≥20% margin against line surges and transient overvoltage.
R_DS(on) typ.	73 mΩ at V_GS = 10 V, I_D = 15 A - Enables <2.2 W conduction loss at 20 A, reducing heatsink requirements in 1 kW PFC designs.
E_AS	660 mJ (single-pulse, T_J = 25 °C) - Withstands unclamped inductive energy during startup/fault without failure, eliminating need for external snubbers.
Q_gd	30 nC - Low gate-drain charge minimizes Miller plateau duration, enabling clean 100 kHz+ hard-switching with 4.7 Ω gate resistor.
trr / Q_rr	382 ns / 6.6 µC at 25 °C - Reduces diode recovery losses and EMI in totem-pole PFC; soft recovery avoids current spikes.
R_thJC	3.6 °C/W - Allows 35 W continuous dissipation at T_C = 25 °C; enables compact heatsinking in enclosed industrial power supplies.
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during bridge-leg commutation without spurious turn-on or latch-up.

Pinout & Package

TO-220FP package: insulated case, single-row 3-pin vertical mounting with tab-drain configuration. Designed for PCB through-hole mounting with direct heatsink contact via isolated tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; 2.4 Ω intrinsic gate resistance limits ringing and simplifies RC damping.
2 (D, TAB)	Drain (exposed metal tab)	Main high-side power node; electrically connected to package tab; must be isolated from heatsink using insulating washer or pad.
3 (S)	Source	Power return path and reference for gate drive; low-inductance layout critical to minimize V_GS noise during switching.

Key Features

Feature	Design Value
MDmesh M5 superjunction structure	Delivers 73 mΩ R_DS(on) at 650 V - 25% lower on-resistance than prior-generation 650 V MOSFETs, directly improving full-load efficiency.
100% unclamped inductive avalanche tested	Guarantees E_AS ≥ 660 mJ per unit - eliminates need for design margining or derating in flyback or LLC resonant converter primary switches.
Soft-recovery body diode	Q_rr = 6.6 µC, trr = 382 ns - Reduces diode-induced switching loss by >40% vs standard silicon diodes in totem-pole PFC, lowering temperature rise.
High dv/dt immunity	50 V/ns MOSFET ruggedness - Prevents false triggering during fast bus transitions in half-bridge inverters operating above 50 kHz.
ECOPACK® compliant packaging	Meets RoHS and halogen-free requirements without performance trade-offs - suitable for industrial and medical power supply certifications.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1.2 kW active clamp forward or LLC resonant converter powering telecom shelf systems.

IC Role / Device Role / Timing Role: High-voltage main switch handling 400 VDC bus; operates at 100–300 kHz with zero-voltage switching.

Use Value: 73 mΩ R_DS(on) reduces conduction loss by 1.8 W vs comparable 95 mΩ devices, enabling 0.5°C lower MOSFET junction temperature at full load.

Use Scenario: Boost PFC stage in 2 kW server PSU with digital control and interleaved topology.

IC Role / Device Role / Timing Role: Fast-switching boost switch requiring low Q_gd and soft diode recovery to minimize dead-time losses.

Use Value: 30 nC Q_gd and 6.6 µC Q_rr cut total switching energy by 22% compared to legacy 600 V MOSFETs, improving light-load efficiency.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Upper-leg IGBT replacement in 3-phase 7.5 kW HVAC inverter driving permanent magnet motors.

IC Role / Device Role / Timing Role: High-side switching element in 650 V DC-link inverter; handles 30 A RMS phase current.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during shoot-through events, increasing system reliability without added gate clamping.

Use Scenario: DC-DC isolation stage in 3 kW solar microinverter interfacing PV string to 400 V battery bank.

IC Role / Device Role / Timing Role: Primary switch in high-frequency dual-active-bridge (DAB) converter operating at 200 kHz.

Use Value: 3.6 °C/W R_thJC allows 35 W dissipation with minimal heatsink volume, supporting compact, fanless enclosure design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF36N60DM6	600 V rating, 65 mΩ R_DS(on), same TO-220FP package, but MDmesh DM6 process - lower voltage headroom, higher capacitance (C_iss = 3.5 nF vs 3.0 nF).	Not suitable for 400 VAC + surge environments exceeding 600 V peak; better for cost-sensitive 600 V designs with relaxed dv/dt demands.	Select when system max V_DS stays below 550 V and lowest possible R_DS(on) is prioritized over surge margin.
IPW65R095C7	650 V, 95 mΩ R_DS(on), TO-247 package, CoolMOS C7 - higher R_DS(on), larger footprint, but superior E_AS (820 mJ) and lower Q_g (62 nC).	Preferred in space-constrained but thermally relaxed layouts where gate drive simplicity outweighs conduction loss.	Choose when board real estate permits TO-247 and gate driver output current is limited (<1 A peak), favoring lower Q_g over R_DS(on).

Compared with STF36N60DM6, STF38N65M5 provides essential 650 V surge margin for global mains operation; versus IPW65R095C7, it delivers 22% lower conduction loss in TO-220FP form factor - critical for compact, convection-cooled industrial PSUs.

Availability

STF38N65M5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF38N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating at 650 V with demanding thermal and reliability requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF38N65M5 supports 19 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10297 Rev 3. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the SOA boundary up to 1 ms pulse width.

Does this MOSFET require negative gate drive for reliable turn-off?

No - STF38N65M5 has a gate threshold voltage range of 3–5 V and is fully enhanced at V_GS = 10 V. Negative gate drive is not required; however, a –5 V to 0 V turn-off bias improves noise immunity in high-dv/dt environments and is recommended for industrial motor drives.

Can STF38N65M5 replace STF24NM60ND in existing designs?

Yes, with caveats: both are TO-220FP N-channel 600–650 V MOSFETs, but STF38N65M5 offers 650 V rating (vs 600 V), 73 mΩ R_DS(on) (vs 110 mΩ), and superior dv/dt ruggedness (50 V/ns vs 35 V/ns). Layout review is needed due to different gate charge profile (Q_g = 71 nC vs 45 nC).

Is the TO-220FP package electrically insulated?

Yes - the TO-220FP package features an insulated tab (V_ISO = 2.5 kV RMS, t = 1 s), allowing direct mounting to grounded heatsinks without additional isolation hardware. This simplifies thermal design and reduces bill-of-materials cost in high-voltage power stages.

STF38N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF38N65M5 FAQ

1.How can I place an order for STF38N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF38N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF38N65M5 reliable?

The price and inventory of STF38N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF38N65M5 is usually 5 days.

3.What payment methods are accepted for STF38N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF38N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF38N65M5?

STF38N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF38N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF38N65M5?

For technical support, including STF38N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF38N65M5 requirements.

6.How does Aetrix verify that STF38N65M5 is sourced from the original manufacturer or authorized distributors?

All STF38N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF38N65M5 meets industry standards.

7.What is the process for return or replacement of STF38N65M5?

All STF38N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STF38N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF38N65M5 part is unused and in its original packaging.

Return procedure for STF38N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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