STMicroelectronics STF3N80K5

Overview

STF3N80K5 from STMicroelectronics is an 800 V, 2.5 A N-channel power MOSFET in IPAK (TO-251) package, fabricated with MDmesh K5 vertical structure technology. It delivers 2.8 Ω typ. R_DS(on), 9.5 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage flyback and PFC stages in industrial SMPS.

For engineers reviewing the STF3N80K5 datasheet, STF3N80K5 pinout, STF3N80K5 application, or STF3N80K5 equivalent, key selection criteria include its ultra-low Q_g/R_DS(on) figure of merit, Zener-protected gate, 50 V/ns dv/dt ruggedness, and 65 mJ single-pulse avalanche energy - critical for reliable operation in unclamped inductive switching.

Technical Context

This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to achieve industry-leading R_DS(on) × area efficiency and FoM. Its 2.8 Ω typical on-resistance at V_GS = 10 V and 1 A, combined with 1.5 nC Q_gs and 7.5 nC Q_gd, enables fast, low-loss switching in 400–640 V DC-link topologies.

The integrated Zener-protected gate withstands ±30 V transient stress, while 100% UIS testing ensures robustness under repetitive avalanche conditions. Its 2.08 °C/W R_thJC and 150 °C max junction temperature support thermally constrained board layouts in enclosed power supplies.

Key Specifications

Pinout & Package

IPAK (TO-251) package with exposed drain tab for thermal and electrical connection; 3-pin single-ended leaded outline, RoHS-compliant ECOPACK2 grade.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP3N80K5 and FDPF3N80T, STF3N80K5 offers superior thermal performance via IPAK's low R_thJC, tighter R_DS(on) tolerance, and built-in gate protection - making it optimal for high-density, high-reliability SMT power stages where board area and long-term field stability are critical.

Availability

STF3N80K5 is available at Aetrix Electronics and suitable for industrial flyback SMPS, active PFC stages, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for STF3N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STF3N80K5 belongs to the MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF3N80K5 supports 1.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9824 Rev 5. This derating reflects thermal limitations of the IPAK package and ensures safe operation within the SOA boundary defined in Figure 1, even under sustained high-temperature ambient conditions.

Does STF3N80K5 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, rated for ±30 V, as confirmed in the "Features" section and validated by gate leakage current (I_GSS) specification of ±10 µA at ±20 V. This eliminates the need for external gate clamping in most industrial applications.

Can STF3N80K5 replace STU3N80K5 in existing designs?

No - STU3N80K5 uses IPAK (TO-251) but has different marking and minor parametric differences: STU3N80K5 specifies 2.8 Ω typ. R_DS(on) at 1 A, while STF3N80K5 is characterized identically per DS9824 Rev 5. However, STF3N80K5 is a distinct orderable part with verified production status and full qualification; direct substitution requires validation of layout and thermal interface.

What is the reverse recovery charge (Q_rr) of the body diode at 150 °C?

At T_J = 150 °C, the body diode exhibits Q_rr = 1.9 µC under test conditions of I_SD = 2.5 A, di/dt = 100 A/µs, and V_DD = 60 V, as documented in Table 7 of DS9824 Rev 5. This value is 58% higher than at 25 °C (1.2 µC), reflecting increased minority-carrier lifetime at elevated temperature.