STMicroelectronics STF3NK100Z

Overview

STF3NK100Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in DPAK (TO-252) package, rated for 1000 V drain-source voltage, 6.0 Ω max R_DS(on) at V_GS = 10 V, and 2.5 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche-tested ruggedness (E_AS = 110 mJ), and low gate charge (Q_g = 18 nC), enabling reliable high-voltage switching in offline SMPS and AC-DC adapters.

For engineers reviewing the STF3NK100Z datasheet, STF3NK100Z pinout, STF3NK100Z application, or STF3NK100Z equivalent, key selection criteria include verified avalanche energy rating, Zener-protected gate robustness, DPAK thermal resistance (R_thJC = 1.39 °C/W), and confirmed 1000 V breakdown voltage under production test conditions.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high-voltage integrity and fast switching. Its Zener-protected gate structure withstands ±30 V transient stress, and its low C_iss (601 pF) and C_rss (12 pF) support efficient high-frequency operation in hard-switched topologies.

The MOSFET integrates a source-drain diode with 2.5 A continuous rating, 584 ns reverse recovery time (T_J = 25 °C), and 2.3 µC Q_rr, enabling self-commutated flyback and resonant converter designs without external diode supplementation.

Key Specifications

Pinout & Package

STF3NK100Z uses the DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection. The package features standardized footprint per ST's FP_0068772_34 layout, supporting 1.39 °C/W junction-to-case thermal resistance when mounted on ≥1-inch² 2 oz copper PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP3NK100Z and FQP10N100C, STF3NK100Z provides superior thermal performance in SMT layouts, guaranteed gate protection, and higher avalanche ruggedness - making it the preferred choice for certified industrial and medical power supplies requiring long-term reliability.

Availability

STF3NK100Z is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial SMPS, and high-voltage LED drivers requiring stable component supply, long-lifecycle assurance, and traceable sourcing for safety-critical deployments.

Supply support for STF3NK100Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STF3NK100Z belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-reliability, high-voltage switching in offline power conversion systems where avalanche robustness and gate protection are mandatory.

FAQ

What is the maximum gate-source voltage rating for STF3NK100Z?

The absolute maximum V_GS is ±30 V, enforced by integrated bidirectional Zener diodes across gate and source terminals. This protection is production-tested and guarantees immunity to ESD events up to 3 kV (HBM) and transient gate spikes during board-level operation.

Does STF3NK100Z require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω to 22 Ω) is required to dampen ringing caused by gate loop inductance and C_iss/C_rss interaction. The datasheet specifies switching times (e.g., t_d(on) = 15 ns, t_f = 32 ns) using R_G = 4.7 Ω, confirming optimal drive strength for 100–500 kHz operation.

Can STF3NK100Z replace STP3NK100Z in existing designs?

Yes, with PCB layout modification: STF3NK100Z uses DPAK (TO-252) while STP3NK100Z uses TO-220. Pinout is identical (G-D-S), but the DPAK drain tab must be routed to high-voltage net and thermally anchored to copper area. Thermal performance improves (R_thJC drops from 2.5 °C/W to 1.39 °C/W), allowing higher power density.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 1.57 A (per Table 1), and pulse current (I_DM) remains 10 A only for pulse widths limited by SOA boundaries - typically <100 µs at V_DS = 800 V. Full SOA curves are provided in Figure 1 of DS5252 Rev 5.