STMicroelectronics STF4LN80K5

Overview

STF4LN80K5 from STMicroelectronics is an N-channel 800 V, 2.1 Ω typ. (2.6 Ω max.), 3 A MDmesh K5 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters where ultra-low gate charge (3.7 nC) and rugged avalanche capability (160 mJ) are critical.

For engineers reviewing the STF4LN80K5 datasheet, STF4LN80K5 pinout, STF4LN80K5 application, or STF4LN80K5 equivalent, key selection factors include its 15 V/ns diode recovery dv/dt rating, 50 V/ns MOSFET dv/dt ruggedness, 100% avalanche-tested reliability, Zener-protected gate, and 2.5 kV insulation withstand voltage - all validated per DS11025 Rev 3.

Technical Context

This device implements ST's MDmesh K5 vertical superjunction architecture to simultaneously minimize R_DS(on) and gate charge, enabling high power density in 800 V applications. Its 122 pF input capacitance (C_iss) and 0.3 pF reverse transfer capacitance (C_rss) support fast, low-noise switching with minimal Miller effect.

The integrated body diode exhibits 230 ns reverse recovery time at 25 °C and 368 ns at 150 °C, with 1.04–1.53 µC Q_rr, making it suitable for hard-switched topologies requiring controlled diode recovery. Thermal resistance is 6.25 °C/W junction-to-case, supporting 20 W continuous dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, 3-pin through-hole outline with integral heatsink interface. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF3LN80K5 and IPP60R190C7, STF4LN80K5 uniquely delivers 800 V blocking with sub-3 nC gate charge and guaranteed avalanche performance - a combination unavailable in lower-voltage or prior-generation superjunction MOSFETs.

Availability

STF4LN80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and high-voltage DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STF4LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-voltage power conversion - specifically engineered to replace older superjunction technologies in 600–900 V SMPS, PFC, and motor drive applications with lower R_DS(on) × Q_g FoM and enhanced ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF4LN80K5 supports 1.9 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11025 Rev 3. This derating reflects thermal limitations of the TO-220FP package with R_thJC = 6.25 °C/W; actual usable current depends on heatsink design and ambient conditions.

Does the device require external gate protection?

No external gate protection is required. The STF4LN80K5 integrates a Zener diode between gate and source, rated for ±30 V, which clamps transient overvoltage during ESD events or gate driver faults - confirmed by ST's internal qualification and documented in Section 2.1 of DS11025.

Can STF4LN80K5 be used in avalanche mode for energy recycling?

Yes - every unit is 100% tested for single-pulse avalanche energy up to 160 mJ at T_J = 25 °C (E_AS). However, repetitive avalanche operation is not characterized or guaranteed; the device is intended for controlled switching, not sustained avalanche conduction.

What is the safe operating area (SOA) limitation at 10 µs pulse width?

At t_p = 10 µs, the SOA curve (Figure 1) limits V_DS to ~600 V at 3 A, constrained by R_DS(on) and peak power. This reflects the device's ability to withstand short-circuit events in PFC or inverter legs without destructive failure, provided gate drive remains active.