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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF4N52K3

Name: STF4N52K3
Brand: STMicroelectronics
SKU: STF4N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF4N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF4N52K3.pdf

Description:: MOSFET N-CH 525V 2.5A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:1,834

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Product details

Overview

STF4N52K3 from STMicroelectronics is an N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features Zener-protected gate, 100% avalanche tested operation, and extremely high dv/dt capability up to 12 V/ns.

For engineers reviewing the STF4N52K3 datasheet, STF4N52K3 pinout, STF4N52K3 application, or STF4N52K3 equivalent, this device is evaluated for high-reliability flyback converters, resonant LLC topologies, and ESD-sensitive high-side switch designs requiring low Coss (28 pF) and fast diode recovery (trr = 173 ns at 25 °C).

Technical Context

This MDmesh™ K3 MOSFET employs a vertically optimized silicon structure delivering 2.1 Ω typical RDS(on) at VGS = 10 V and ID = 1.25 A, with intrinsic gate resistance of 4 Ω enabling precise gate drive control. Its Zener-protected gate-source junction (V(BR)GSO = 30 V) eliminates need for external clamping in transient-prone environments.

The device integrates a fast-recovery source-drain diode with Qrr = 778 nC and IRRM = 9 A under standard test conditions (ISD = 2.5 A, di/dt = 100 A/µs), and achieves single-pulse avalanche energy EAS = 110 mJ at Tj = 25 °C - critical for unclamped inductive switching robustness.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	525 V - supports full mains input range (85–265 VAC) with margin for surge and ringing in offline converters
RDS(on) max	2.6 Ω - ensures ≤1.6 W conduction loss at 2.5 A continuous drain current, enabling compact thermal design
ID (TC = 25 °C)	2.5 A - defines safe continuous current handling with derating to 2 A at TC = 100 °C
Coss	28 pF - reduces capacitive turn-off losses and improves light-load efficiency in hard-switched topologies
dv/dt capability	12 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in bridge-leg configurations
EAS	110 mJ - enables reliable operation in unclamped inductive switching without external snubbers
trr	173 ns - minimizes reverse recovery charge-induced switching loss and EMI in synchronous rectification

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for enhanced thermal dissipation; thermally efficient layout compatible with 1-inch² FR-4 PCB (Rthj-pcb = 50 °C/W). Standard 3-pin configuration with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab / Pin 2)	Drain terminal	Exposed metal tab electrically connected to drain; primary thermal path to PCB copper pour or heatsink
G (Pin 1)	Gate terminal	Control input requiring <±30 V rating; integrated Zener protection limits gate overvoltage to 30 V
S (Pin 3)	Source terminal	Reference node for gate drive; connects to power ground or floating return in high-side configurations

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 110 mJ performance across production lot - no screening waivers
Extremely high dv/dt capability	12 V/ns rating validated per JEDEC JESD24-11 - suppresses false triggering in half-bridge leg commutation
Very low intrinsic capacitance	Ciss = 334 pF, Coss = 28 pF - reduces gate drive power and improves switching speed in high-frequency PFC
Zener-protected gate	V(BR)GSO = 30 V - replaces external TVS in gate drive loop, reducing BOM count and layout area
Improved diode reverse recovery	Qrr = 778 nC, trr = 173 ns - cuts diode-related switching loss by >30% vs legacy K2 devices in same package

Applications

Industrial Flyback Converter

Active PFC Stage

Use Scenario: 65 W universal-input offline flyback converter for industrial HMIs with 150 °C ambient requirement.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with 525 V blocking capability and avalanche-rated stress margin.

Use Value: 2.6 Ω RDS(on) limits conduction loss to 1.6 W; 110 mJ EAS withstands output short-circuit events without failure.

Use Scenario: 300 W boost-type active PFC front-end in DIN-rail power supply for factory automation.

IC Role / Device Role / Timing Role: Boost switch handling 2.5 A RMS current with 12 V/ns dv/dt immunity during zero-crossing transitions.

Use Value: Low Coss (28 pF) and fast trr (173 ns) reduce switching loss by 22% vs comparable 600 V MOSFETs at 100 kHz.

Resonant LLC Half-Bridge

High-Side Motor Drive Switch

Use Scenario: 150 W resonant LLC transformer driver for LED streetlight power supplies with high-efficiency target (>92%).

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; subjected to high dv/dt during ZVS transitions.

Use Value: 12 V/ns dv/dt rating prevents parasitic turn-on; Zener-protected gate eliminates need for discrete clamping diodes.

Use Scenario: High-side 24 V DC motor control in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO; requires robust ESD immunity and fast turn-off.

Use Value: Integrated 30 V gate Zener withstands IEC 61000-4-2 contact discharge; 14 ns fall time enables precise PWM timing control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STD4N52K3	Identical electrical specs; DPAK package with type A footprint (A = 2.20–2.40 mm, b = 0.64–0.90 mm)	Same thermal performance (Rthj-case = 2.78 °C/W); optimized for automated reflow on standard SMT lines	Select when board space allows standard DPAK land pattern and tape-and-reel logistics are preferred.
STP4N52K3	Identical RDS(on), VDS, and avalanche rating; TO-220 package with higher Rthj-amb (100 °C/W) but direct heatsink mounting	Better thermal management in forced-air or heatsink-mounted industrial enclosures; larger board footprint required	Select for prototyping, low-volume builds, or applications requiring mechanical robustness and field-serviceable replacement.

Compared with STD4N52K3, STF4N52K3 offers identical silicon but distinct DPAK variant mechanical dimensions (type E outline per DS7026 Rev 3), while STP4N52K3 trades surface-mount convenience for superior heatsinking - choice depends on thermal path priority versus assembly automation requirements.

Availability

STF4N52K3 is available at Aetrix Electronics and suitable for industrial flyback converters, active PFC stages, and resonant LLC half-bridge designs requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STF4N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and industrial microcontrollers.

STF4N52K3 belongs to the MDmesh™ K3 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications demanding low RDS(on), fast recovery, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for STF4N52K3 at 100 °C case temperature?

The maximum continuous drain current ID at TC = 100 °C is 2 A, as specified in Table 1 of DS7026 Rev 3. This derating from 2.5 A (at TC = 25 °C) reflects thermal limitations of the DPAK package under sustained high-temperature operation, and must be applied in thermal design calculations.

Does STF4N52K3 include integrated gate protection?

Yes - STF4N52K3 integrates back-to-back Zener diodes between gate and source, with a specified breakdown voltage V(BR)GSO of 30 V at IGS = ±1 mA. This eliminates the need for external gate clamping components in most industrial switching applications.

How does the diode recovery performance compare to previous MDmesh generations?

STF4N52K3 delivers improved diode recovery with trr = 173 ns and Qrr = 778 nC at 25 °C, representing a 15–20% reduction in Qrr versus MDmesh K2 equivalents. This directly lowers switching loss and EMI in hard-switched and quasi-resonant topologies.

Is STF4N52K3 suitable for use in high-humidity industrial environments?

Yes - STF4N52K3 is qualified per industrial temperature range (−55 to 150 °C) and offered in ECOPACK®-compliant DPAK packages with moisture sensitivity level (MSL) rated per JEDEC J-STD-020. Proper PCB conformal coating and assembly handling ensure reliability in humid conditions.

STF4N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 334 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF4N52K3 FAQ

1.How can I place an order for STF4N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF4N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF4N52K3 reliable?

The price and inventory of STF4N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF4N52K3 is usually 5 days.

3.What payment methods are accepted for STF4N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF4N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF4N52K3?

STF4N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF4N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF4N52K3?

For technical support, including STF4N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF4N52K3 requirements.

6.How does Aetrix verify that STF4N52K3 is sourced from the original manufacturer or authorized distributors?

All STF4N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF4N52K3 meets industry standards.

7.What is the process for return or replacement of STF4N52K3?

All STF4N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF4N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF4N52K3 part is unused and in its original packaging.

Return procedure for STF4N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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