STMicroelectronics STF4N90K5
- Part No.:
- STF4N90K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STF4N90K5.pdf
- Description:
- MOSFET N-CH 900V 4A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:824
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STF4N90K5 from STMicroelectronics is a 900 V, 4 A N-channel Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.90 Ω typical RDS(on), 5.3 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in industrial SMPS and PFC stages.
For engineers reviewing the STF4N90K5 datasheet, STF4N90K5 pinout, STF4N90K5 application, or STF4N90K5 equivalent, key selection criteria include ultra-low FoM (RDS(on) × Qg = 10.1 nΩ·F), Zener-protected gate, 2.5 kV insulation rating, and di/dt ruggedness up to 50 V/ns - critical for flyback, resonant, and hard-switched HV converters.
Technical Context
This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to minimize both conduction loss and switching loss simultaneously. Its low Ciss (173 pF) and ultra-low Qgd/Qgs ratio (2.8 nC / 1.45 nC) enable fast, controllable turn-on/turn-off with reduced Miller-induced shoot-through risk.
The integrated body diode exhibits 289 ns trr at 25 °C and 494 ns at 150 °C, with 1.56 µC Qrr, supporting moderate-frequency inductive switching. The 6.25 °C/W RthJC and 100% unclamped inductive avalanche rating (EAS = 160 mJ) support robust operation under transient overloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 900 V - supports DC bus voltages up to 650 V RMS in AC-DC front-ends with margin |
| RDS(on) max | 2.10 Ω - limits conduction loss to ≤3.36 W at 4 A continuous drain current |
| Qg | 5.3 nC - enables efficient gate drive with <100 mW driver power at 100 kHz |
| EAS | 160 mJ - sustains single-pulse inductive energy without failure at TJ = 25 °C |
| Viso | 2.5 kV RMS - ensures reinforced insulation between leads and heatsink in isolated topologies |
| dv/dt ruggedness | 50 V/ns - prevents spurious turn-on during high-slew-rate voltage transients |
| tr/tf | 11.8 ns / 25.5 ns - supports >500 kHz switching with controlled EMI profile |
Pinout & Package
TO-220FP (Type B) package: insulated tab, vertical mounting, 3-pin through-hole outline with integral heatsink interface. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate control terminal | Low-impedance input requiring <10 V threshold; Zener-protected to ±30 V |
| Pin 2 (D) | Drain connection | High-voltage node tied to primary-side DC bus; electrically isolated from tab |
| Pin 3 (S) | Source reference | Return path for load current; referenced to PCB ground plane or floating node |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | Qg = 5.3 nC enables minimal gate drive loss and fast switching in high-frequency SMPS |
| Zener-protected gate | Integrated ±30 V gate-source clamp eliminates need for external TVS in most layouts |
| 100% avalanche tested | Each unit validated for single-pulse EAS = 160 mJ - guarantees ruggedness in unclamped inductive loads |
| MDmesh K5 technology | Vertical superjunction structure achieves 1.90 Ω RDS(on) at 900 V - 30% lower than prior K3 generation |
Applications
| Industrial Switch-Mode Power Supplies | Active PFC Front-Ends |
|---|---|
Use Scenario: 300–500 W offline flyback or forward converter operating at 65–130 kHz with universal AC input. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling full DC link voltage and peak currents up to 4 A. Use Value: Low RDS(on) and Qg reduce conduction + switching losses by ≥12% vs. legacy 900 V MOSFETs, improving efficiency to >89% at full load. | Use Scenario: Boost-type active PFC stage in 1–2 kW server PSUs or industrial motor drives. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology, switching at 65–100 kHz. Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during line-voltage zero-crossing transients, ensuring stable regulation. |
| High-Voltage DC-DC Converters | Lighting Ballasts & LED Drivers |
Use Scenario: Isolated 400–800 V input DC-DC module for telecom or railway auxiliary power. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or LLC resonant converter. Use Value: 2.5 kV isolation rating allows direct mounting to heatsink without insulating pad, simplifying thermal design and reducing parasitic inductance. | Use Scenario: High-bay LED driver with 300–600 V DC input from rectified AC or PV string. IC Role / Device Role / Timing Role: Buck or buck-boost switch controlling constant-current LED string output. Use Value: Avalanche-rated operation tolerates LED open-circuit transients without external snubber, lowering BOM cost and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STF3N90K5 | 3 A rating, 2.7 Ω RDS(on) max, same K5 process and package | Lower current capability suits <200 W designs; reduced thermal margin at full load | Select when peak ID ≤ 2.5 A and footprint compatibility is required |
| IPP60R099C7 | 650 V rating, 0.099 Ω RDS(on), TO-220FP, CoolMOS C7 | Not rated for 900 V systems; requires derating or topology change for 400 VAC+ inputs | Prefer only in 380–450 V DC bus applications where lower RDS(on) justifies voltage trade-off |
Compared with STF3N90K5 and IPP60R099C7, STF4N90K5 uniquely balances 900 V blocking, 4 A current, and 5.3 nC gate charge - making it optimal for 300–500 W universal-input SMPS where voltage margin, avalanche safety, and thermal headroom are non-negotiable.
Availability
STF4N90K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and high-voltage DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for STF4N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
The MDmesh K5 Power MOSFET product line targets high-efficiency, high-reliability high-voltage switching applications - specifically engineered to replace older superjunction technologies in 600–900 V SMPS, PFC, and industrial inverters.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STF4N90K5 supports 2.5 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS11906 Rev 3. This derating reflects thermal limitations of the TO-220FP package with RthJC = 6.25 °C/W; proper heatsinking is required to sustain this current without exceeding TJ = 150 °C.
Does the STF4N90K5 include an integrated body diode, and what are its recovery characteristics?
Yes, it features a monolithic source-drain diode with trr = 289 ns and Qrr = 1.56 µC at TJ = 25 °C (ISD = 3 A, di/dt = 100 A/µs). At 150 °C, trr increases to 494 ns and Qrr to 2.45 µC. These values are measured per Figure 15 test circuit and support moderate-frequency hard-switched operation.
Can STF4N90K5 be used in avalanche mode for clamping protection?
Yes - every unit undergoes 100% single-pulse avalanche testing at IAR = 1 A and EAS = 160 mJ (TJ = 25 °C). While not intended for repetitive avalanche, it provides reliable overvoltage protection during inductive switching faults, eliminating need for external clamping circuits in many designs.
Is the TO-220FP package electrically insulated, and what is its isolation voltage rating?
Yes - the TO-220FP (Type B) package has an insulated metal tab rated for 2.5 kV RMS insulation withstand voltage between all three leads and external heatsink (t = 1 s, TC = 25 °C), per Table 1. This allows direct mounting to grounded heatsinks without thermal pads or insulators in isolated topologies.
STF4N90K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ K5
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.1Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.3 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 173 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STF4N90K5 FAQ
1.How can I place an order for STF4N90K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STF4N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STF4N90K5 reliable?
The price and inventory of STF4N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF4N90K5 is usually 5 days.
3.What payment methods are accepted for STF4N90K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF4N90K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STF4N90K5?
STF4N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STF4N90K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STF4N90K5?
For technical support, including STF4N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF4N90K5 requirements.
6.How does Aetrix verify that STF4N90K5 is sourced from the original manufacturer or authorized distributors?
All STF4N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF4N90K5 meets industry standards.
7.What is the process for return or replacement of STF4N90K5?
All STF4N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF4N90K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STF4N90K5 part is unused and in its original packaging.
Return procedure for STF4N90K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STF4N90K5 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

