STMicroelectronics STF5N62K3

Overview

STF5N62K3 from STMicroelectronics is an N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STF5N62K3 datasheet, STF5N62K3 pinout, STF5N62K3 application, or STF5N62K3 equivalent, key selection criteria include its 620 V V_DS, 1.28 Ω R_DS(on) at V_GS = 10 V, 25 W total dissipation at T_C = 25 °C, built-in Zener-protected gate, and 12 V/ns diode recovery dv/dt rating.

Technical Context

This device employs ST's MDmesh™ K3 vertical superjunction architecture to achieve low R_DS(on) × Q_g figure-of-merit while maintaining high voltage blocking. Its optimized structure delivers improved diode reverse recovery (t_rr = 290 ns at T_j = 25 °C) and low intrinsic capacitance (C_iss = 680 pF, C_oss = 50 pF).

The TO-220FP package provides isolated mounting with 2.5 kV RMS insulation withstand voltage between leads and heat sink. Thermal resistance junction-to-case is 5 °C/W, enabling stable operation up to 150 °C junction temperature under controlled heatsinking.

Key Specifications

Pinout & Package

STF5N62K3 uses the TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to a common heatsink without electrical isolation hardware. The package features three leads: Drain (Tab), Gate (Pin 1), Source (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP5N62K3, STF5N62K3 trades 3.2× higher thermal resistance for electrical isolation convenience; versus FDPF5N62WT, it delivers lower conduction loss, superior dv/dt immunity, and integrated gate protection-justifying use in mission-critical industrial power stages.

Availability

STF5N62K3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for STF5N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

The MDmesh™ K3 product line targets high-efficiency, high-reliability power conversion in 500 W–5 kW systems, emphasizing avalanche ruggedness, low switching loss, and ease of thermal integration in space-constrained designs.

FAQ

What is the maximum continuous drain current for STF5N62K3 at 100 °C case temperature?

The maximum continuous drain current is 3 A at T_C = 100 °C, as specified in Table 1 of DS6792 Rev 3. This derating reflects thermal limits of the TO-220FP package (R_thj-case = 5 °C/W) and ensures junction temperature remains ≤150 °C under sustained load.

Does STF5N62K3 require external gate protection components?

No. STF5N62K3 integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage, providing inherent ESD protection and eliminating the need for external gate clamps in typical industrial applications.

How does the TO-220FP package differ electrically from standard TO-220 in STF5N62K3?

The TO-220FP variant features an electrically insulated metal tab rated for 2.5 kV RMS isolation from all three leads, enabling direct mounting to a common heatsink without insulating hardware-unlike standard TO-220 which requires a mica washer or sil-pad for isolation.

Can STF5N62K3 be used in zero-voltage switching (ZVS) circuits?

Yes. Its low C_oss (50 pF) and C_oss eq. (16.6 pF), combined with fast diode recovery (290 ns), support reliable ZVS operation in LLC resonant converters and phase-shifted full-bridge topologies up to 300 kHz switching frequency.