STMicroelectronics STF5N80K5

Overview

STF5N80K5 from STMicroelectronics is an N-channel 800 V, 4 A Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.50 Ω typical R_DS(on), 5 nC total gate charge, and 165 mJ single-pulse avalanche energy - enabling high-efficiency, high-density switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STF5N80K5 datasheet, STF5N80K5 pinout, STF5N80K5 application, or STF5N80K5 equivalent, key selection criteria include its 2.5 kV insulation withstand voltage, 50 V/ns MOSFET dv/dt ruggedness, 100% avalanche-tested reliability, and Zener-protected gate - critical for robust high-voltage flyback and PFC stage design.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize both conduction loss (via ultra-low R_DS(on)) and switching loss (via low C_iss = 177 pF and Q_g = 5 nC). Its integrated body diode features 265 ns reverse recovery time at 25 °C and 386 ns at 150 °C, supporting hard-switched inductive loads.

The TO-220FP package provides insulated mounting (2.5 kV RMS isolation between leads and heat sink) and 6.25 °C/W junction-to-case thermal resistance. Gate threshold voltage is tightly specified at 3–5 V (V_GS(th)), ensuring stable turn-on across temperature with minimal drive circuit complexity.

Key Specifications

Pinout & Package

STF5N80K5 uses the TO-220FP (Type B) package - a full-molded, insulated variant of TO-220 with integral plastic barrier providing 2.5 kV RMS isolation between all three leads and the heatsink mounting surface. The package has 3 terminals and is designed for vertical PCB mounting with screw-down heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP5N80K5 and FQP5N80, STF5N80K5 uniquely combines certified avalanche robustness, gate Zener protection, and reinforced isolation - making it the only choice for safety-certified industrial power stages where reliability under transient stress is mandatory.

Availability

STF5N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver front-end switching, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for STF5N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh K5 series targets high-efficiency, high-power-density offline power conversion - specifically engineered for 65–300 kHz SMPS topologies where low R_DS(on) × Q_g FoM directly improves system efficiency and thermal performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF5N80K5 supports 2.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11340 Rev 4. This derating reflects thermal limits of the TO-220FP package (R_thJC = 6.25 °C/W) and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does STF5N80K5 include an integrated body diode, and what are its key recovery characteristics?

Yes - it features a monolithic source-drain diode with 265 ns reverse recovery time (t_rr) and 1.59 µC reverse recovery charge (Q_rr) at T_J = 25 °C, per Table 7. At 150 °C, t_rr increases to 386 ns. These values are measured under standardized inductive-load conditions (I_SD = 4 A, di/dt = 100 A/µs, V_DD = 60 V).

Can STF5N80K5 be used in place of STP5N80K5 without board-level changes?

No - although electrically identical, STF5N80K5 uses the insulated TO-220FP package versus the standard TO-220 of STP5N80K5. The insulated tab requires no thermal pad but alters mechanical mounting and creepage/clearance layout. PCB footprint and heatsink interface must be verified for compatibility.

What is the significance of the "K5" suffix in STF5N80K5?

The "K5" denotes ST's fifth-generation MDmesh superjunction technology - optimized for 800 V rating with reduced specific on-resistance and gate charge versus earlier K3/K4 variants. It reflects process enhancements including refined pillar doping, improved oxide quality, and tighter parametric control for higher power density in compact packages.