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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF5N95K3

Name: STF5N95K3
Brand: STMicroelectronics
SKU: STF5N95K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF5N95K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF5N95K3.pdf

Description:: MOSFET N-CH 950V 4A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF5N95K3 from STMicroelectronics is an N-channel 950 V, 3.5 Ω (max), 4 A MDmesh K3 Power MOSFET in DPAK (TO-252) package, featuring 100% avalanche tested operation, 5 V/ns dv/dt capability, and Zener-protected gate. It delivers low R_DS(on), high E_AS (100 mJ), and fast diode recovery (t_rr = 410 ns), making it suitable for high-voltage flyback and resonant SMPS primary-side switching.

For engineers reviewing the STF5N95K3 datasheet, STF5N95K3 pinout, STF5N95K3 application, or STF5N95K3 equivalent, key selection criteria include breakdown voltage margin, avalanche energy rating, gate charge (Q_g = 19 nC), output capacitance (C_oss = 38 pF), and thermal resistance (R_thJC = 1.39 °C/W).

Technical Context

This device employs ST's MDmesh K3 vertical superjunction architecture optimized for high-voltage switching with minimized conduction and switching losses. Its Zener-protected gate structure enables robust ESD immunity without external clamping, while the integrated body diode exhibits improved reverse recovery (Q_rr = 3.5 µC, I_RRM = 17 A) versus legacy K2 devices.

The MOSFET operates with V_GS(th) of 3–5 V and supports gate drive at ±30 V. Its safe operating area (SOA) is defined up to 100 µs pulse width at T_C = 25 °C, and its junction-to-case thermal path is engineered for direct heatsink mounting via the exposed drain tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - Withstands DC bus voltages up to 650 V AC mains-derived systems with ≥45% safety margin.
R_DS(on) max	3.5 Ω @ V_GS = 10 V, I_D = 2 A - Enables <14 W conduction loss at 4 A continuous drain current.
E_AS	100 mJ - Supports unclamped inductive switching events without failure under typical flyback transformer leakage energy.
t_rr	410 ns @ I_SD = 4 A, di/dt = 100 A/µs - Reduces switching loss and EMI during hard-commutated transitions.
Q_g	19 nC - Matches standard 10 V gate drivers; enables <1 µs turn-on with 20 Ω gate resistor.
R_thJC	1.39 °C/W - Allows 65 °C temperature rise at 90 W dissipation when mounted on heatsink.
C_oss	38 pF - Low output capacitance minimizes turn-off loss and improves zero-voltage switching (ZVS) feasibility.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; thermally enhanced plastic surface-mount housing rated for 150 °C junction operation.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts ±30 V gate-source voltage; requires 19 nC total charge for full enhancement.
2 (D, TAB)	Drain / Exposed Tab	Main high-voltage power terminal; electrically and thermally connected to PCB copper pour or heatsink.
3 (S)	Source	Power return and reference node; forms common source configuration with gate drive referenced to this node.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness to 100 mJ at T_J = 25 °C - eliminates need for external snubbers in clamp-free topologies.
Extremely high dv/dt capability	5 V/ns - suppresses false turn-on during high-slew-rate transients in bridge-leg or multi-phase configurations.
Improved diode reverse recovery	t_rr = 410 ns, Q_rr = 3.5 µC - reduces cross-conduction loss and EMI in synchronous rectification and LLC resonant converters.
Zener-protected gate	Integrated 30 V gate-body Zener - prevents gate oxide rupture during hot-plug or layout-induced overshoot without external TVS.
Low intrinsic capacitance	C_iss = 460 pF, C_rss = 1 pF - enables high-frequency operation (>100 kHz) with minimal Miller effect and driver stress.

Applications

Industrial Flyback SMPS

AC-DC Adapter Primary Switch

Use Scenario: 65–100 W offline flyback converter powering industrial control logic with universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: Primary-side high-voltage switch; operates in discontinuous conduction mode (DCM) at 65 kHz with peak drain voltage ≤ 750 V.

Use Value: 950 V V_DS provides 25% overvoltage margin against reflected transients; 100 mJ E_AS absorbs leakage inductance spikes without clamping circuitry.

Use Scenario: Compact 36 W USB-C PD adapter with active clamp flyback topology and 30 kHz–130 kHz variable frequency control.

IC Role / Device Role / Timing Role: Main power switch handling 4 A pulsed drain current; synchronized to controller's gate drive signal with 17 ns t_d(on).

Use Value: 3.5 Ω R_DS(on) limits conduction loss to <1.4 W at full load; low Q_g (19 nC) ensures efficient 10 V gate driving with minimal driver IC power draw.

LED Driver for High-Bay Lighting

Capacitor Discharge Ignition (CDI)

Use Scenario: Constant-current LED driver for 150 W high-bay fixtures using quasi-resonant buck-boost topology with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer into LED string; subjected to repetitive 500 V transient spikes.

Use Value: 5 V/ns dv/dt rating prevents spurious turn-on during rapid bus collapse; Zener-protected gate withstands repeated 30 V gate transients without degradation.

Use Scenario: Solid-state ignition module for small gasoline engines, discharging 100 µF capacitor through primary coil at 200–400 V.

IC Role / Device Role / Timing Role: Fast-switching discharge switch triggered by microcontroller; must survive 16 A pulsed current and 100 mJ single-event avalanche.

Use Value: 16 A I_DM and 100 mJ E_AS enable reliable spark generation over 10,000 cycles; 410 ns t_rr ensures clean turn-off before next firing event.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N95K3	TO-220 package; identical electrical specs but higher R_thJA (60 °C/W vs 50 °C/W) and no exposed tab for direct heatsinking.	Better suited for through-hole prototyping or lower-power designs where board space allows larger footprint and forced-air cooling.	Select when mechanical mounting constraints favor through-hole or when thermal interface to heatsink is less critical than PCB area.
STU5N95K3	IPAK (TO-251) package; same die but smaller outline; R_thJC = 1.55 °C/W (vs 1.39 °C/W); slightly higher C_iss (480 pF).	Ideal for space-constrained consumer adapters where DPAK footprint is prohibitive but thermal performance remains acceptable.	Choose when PCB real estate is premium and thermal budget permits ~12% higher junction temperature rise at full load.

Compared with STP5N95K3 and STU5N95K3, STF5N95K3 offers the lowest thermal resistance and largest copper-tab area for passive heatsinking in surface-mount high-reliability industrial power stages.

Availability

STF5N95K3 is available at Aetrix Electronics and suitable for industrial flyback SMPS, AC-DC adapter primary switching, and LED driver high-side control requiring stable component supply and long-term lifecycle assurance.

Supply support for STF5N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The MDmesh K3 product line targets high-efficiency, high-reliability high-voltage power conversion - specifically engineered for 650–950 V SMPS, lighting ballasts, and motor drives demanding avalanche ruggedness and fast switching.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF5N95K3 supports 3 A continuous drain current at T_C = 100 °C, derated from 4 A at 25 °C per the SOA curve. This reflects thermal limitation rather than electrical saturation, and operation above this requires active heatsinking or reduced duty cycle to maintain T_J ≤ 150 °C.

Does STF5N95K3 require an external gate Zener diode?

No. The device integrates a monolithic Zener diode between gate and source, rated for ±30 V, eliminating the need for external gate protection in standard 10 V gate drive applications. External clamping is only required if gate drive exceeds ±30 V or in ultra-high-noise environments exceeding datasheet immunity limits.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 410 ns and Q_rr = 3.5 µC at 4 A - approximately 40% faster and 30% lower charge than legacy 950 V planar MOSFETs. This reduces reverse recovery loss and EMI in hard-switched topologies, though it is not optimized for synchronous rectification like dedicated FRDs.

Can STF5N95K3 be used in zero-voltage switching (ZVS) circuits?

Yes. With C_oss = 38 pF and low C_rss = 1 pF, it supports ZVS in resonant LLC and phase-shifted full-bridge converters operating up to 300 kHz. Successful implementation requires matching resonant tank design to ensure V_DS falls to near-zero before gate turn-on, leveraging its fast, predictable output capacitance behavior.

STF5N95K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF5N95K3 FAQ

1.How can I place an order for STF5N95K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF5N95K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF5N95K3 reliable?

The price and inventory of STF5N95K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF5N95K3 is usually 5 days.

3.What payment methods are accepted for STF5N95K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF5N95K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF5N95K3?

STF5N95K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF5N95K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF5N95K3?

For technical support, including STF5N95K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF5N95K3 requirements.

6.How does Aetrix verify that STF5N95K3 is sourced from the original manufacturer or authorized distributors?

All STF5N95K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF5N95K3 meets industry standards.

7.What is the process for return or replacement of STF5N95K3?

All STF5N95K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF5N95K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF5N95K3 part is unused and in its original packaging.

Return procedure for STF5N95K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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