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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF5N95K5

Name: STF5N95K5
Brand: STMicroelectronics
SKU: STF5N95K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF5N95K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF5N95K5.pdf

Description:: MOSFET N-CH 950V 3.5A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF5N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 950 V V_DS, 2.5 Ω max R_DS(on) at 10 V V_GS, and 3.5 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (12.5 nC), 100% avalanche tested performance, and Zener-protected gate, targeting high-efficiency flyback and resonant converters in industrial power supplies.

For engineers reviewing the STF5N95K5 datasheet, STF5N95K5 pinout, STF5N95K5 application, or STF5N95K5 equivalent, key selection criteria include its 950 V breakdown voltage, 2.0 Ω typical R_DS(on), 12.5 nC total gate charge, 70 mJ single-pulse avalanche energy, and DPAK (TO-252) thermal resistance of 1.47 °C/W junction-to-case.

Technical Context

This device employs ST's proprietary vertical MDmesh K5 structure to minimize conduction and switching losses simultaneously. Its 950 V V_(BR)DSS and 50 V/ns MOSFET dv/dt ruggedness enable robust operation in high-voltage hard-switched topologies without snubbers.

The integrated source-drain diode exhibits 330 ns reverse recovery time at 150 °C and 2.2 µC Q_rr, supporting quasi-resonant and LLC designs where diode recovery behavior directly impacts EMI and efficiency. Gate threshold voltage is tightly specified (3–5 V) and stable across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	950 V - Withstands 950 V drain-source blocking voltage before avalanche onset, enabling use in 400 V AC input systems with >2× safety margin.
R_DS(on) max	2.5 Ω @ V_GS = 10 V, I_D = 1.5 A - Low conduction loss supports <1.5 W static dissipation at full load in compact heatsink designs.
Q_g	12.5 nC - Enables fast switching with low drive power; reduces gate driver stress in 100–500 kHz SMPS applications.
E_AS	70 mJ - Rated single-pulse avalanche energy ensures reliable unclamped inductive switching in PFC and flyback circuits.
R_thJC	1.47 °C/W - Allows ~48 W continuous power dissipation at T_J = 150 °C with modest heatsinking (T_C ≤ 80 °C).
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during turn-off without spurious turn-on, critical for high-frequency hard-switched converters.
I_SD	3.5 A continuous source-drain current - Supports synchronous rectification or bootstrap supply paths without external diode.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standard 3-pin surface-mount outline optimized for PCB heat spreading and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Pin 2)	Drain	Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper pour for thermal management.
Pin 1	Gate	High-impedance control terminal; requires low-inductance gate drive path to exploit 12.5 nC Q_g and prevent oscillation.
Pin 3	Source	Reference node for gate drive and current sensing; connects to power ground plane with minimal trace inductance.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × area by >30% vs prior-generation 950 V MOSFETs, enabling smaller PCB footprints in space-constrained power modules.
Zener-protected gate	Integrated gate-body Zener clamps V_GS to ±30 V, eliminating need for external gate protection in noisy industrial environments.
100% avalanche tested	Every unit undergoes unclamped inductive switching test at rated I_AR = 1 A, ensuring production-level ruggedness for mission-critical power stages.
Ultra-low C_oss (17 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies operating above 200 kHz.
Low Q_gd/Q_gs ratio	Q_gd = 10 nC, Q_gs = 2 nC - Provides strong Miller immunity and clean voltage-controlled switching behavior under high dv/dt.

Applications

Industrial Flyback SMPS

AC-DC Adapter Primary Switch

Use Scenario: 65–100 W offline flyback converter for factory automation controllers with universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: Main high-side switching element handling primary-side energy transfer and voltage regulation feedback via optocoupler.

Use Value: 950 V rating accommodates 2× line surge peaks (e.g., 300 V_DC + 200 V transient) while maintaining >150 °C junction temperature margin at full load.

Use Scenario: Compact 36 W USB-C PD adapter with active clamp flyback topology and 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side power switch synchronized to controller IC timing; operates in discontinuous conduction mode (DCM) with zero-voltage switching assist.

Use Value: 12.5 nC Q_g and 330 ns diode t_rr reduce switching loss by 22% versus legacy 900 V MOSFETs, improving average efficiency to >90% at 230 V_AC.

LED Driver for High-Bay Lighting

Telecom DC-DC Front-End Converter

Use Scenario: 150 W constant-current LED driver for warehouse high-bay fixtures using quasi-resonant flyback with analog dimming.

IC Role / Device Role / Timing Role: Primary-side HV switch controlling energy storage in transformer primary; withstands 1000 V surge events per IEC 61000-4-5 Level 4.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during lightning-induced transients, eliminating need for RC snubber networks and reducing BOM count.

Use Scenario: -48 V telecom rectifier front-end with active OR-ing and hold-up capacitor charging circuit.

IC Role / Device Role / Timing Role: High-side switch managing bulk capacitor pre-charge and hot-swap sequencing; operates in linear mode during inrush limiting.

Use Value: 2.0 Ω typical R_DS(on) limits inrush power dissipation to <2.5 W during 10 ms soft-start, avoiding thermal runaway in confined chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5N95K5	TO-220 package; identical electrical specs but higher R_thJA (60 °C/W vs 50 °C/W) and no exposed drain tab.	Suitable for through-hole prototyping or lower-power (<50 W) designs where manual assembly and larger heatsinks are acceptable.	Select when mechanical mounting flexibility outweighs PCB space constraints and thermal performance requirements.
IPP50R950CE	950 V, 0.95 Ω R_DS(on), 50 A rating; CoolMOS™ CE platform with higher capacitance (C_iss = 1250 pF) and Q_g = 42 nC.	Better suited for high-current, lower-frequency (≤100 kHz) PFC stages rather than high-frequency flyback due to higher switching loss.	Prefer for continuous conduction mode (CCM) PFC where conduction loss dominates; avoid in DCM flyback above 65 kHz.

Compared with STP5N95K5, STF5N95K5 offers superior thermal performance in surface-mount layouts and tighter board-level integration; versus IPP50R950CE, it trades higher current capability for significantly lower gate drive demand and better high-frequency efficiency in flyback topologies.

Availability

STF5N95K5 is available at Aetrix Electronics and suitable for industrial flyback SMPS, AC-DC adapters, and LED driver designs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STF5N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF5N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in industrial and lighting applications demanding 900+ V blocking capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF5N95K5 supports 2.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9663 Rev 5. This derating reflects thermal limitations of the DPAK package and must be validated against actual PCB layout and ambient conditions using the 1.47 °C/W R_thJC value.

Does STF5N95K5 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external gate protection components in most industrial applications, as confirmed in the "Features" section and Section 4.1 of the datasheet.

Can STF5N95K5 replace STD5N95K5 in existing designs?

No - STF5N95K5 and STD5N95K5 share identical electrical specifications and DPAK packaging but differ in internal construction and qualification. ST explicitly split them into separate datasheets (DS9663 Rev 5 notes), indicating distinct process revisions and reliability profiles; direct substitution requires revalidation.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_C = 25 °C, the SOA is limited by R_DS(on) to approximately 3.5 A at 100 V V_DS, per Figure 1 in DS9663 Rev 5. Operation beyond this boundary risks thermal runaway due to localized heating in the silicon die.

STF5N95K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 220 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF5N95K5 FAQ

1.How can I place an order for STF5N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF5N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF5N95K5 reliable?

The price and inventory of STF5N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF5N95K5 is usually 5 days.

3.What payment methods are accepted for STF5N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF5N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF5N95K5?

STF5N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF5N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF5N95K5?

For technical support, including STF5N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF5N95K5 requirements.

6.How does Aetrix verify that STF5N95K5 is sourced from the original manufacturer or authorized distributors?

All STF5N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF5N95K5 meets industry standards.

7.What is the process for return or replacement of STF5N95K5?

All STF5N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF5N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF5N95K5 part is unused and in its original packaging.

Return procedure for STF5N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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