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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF60N55F3

Name: STF60N55F3
Brand: STMicroelectronics
SKU: STF60N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF60N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF60N55F3.pdf

Description:: MOSFET N-CH 55V 42A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:7,664

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Product details

Overview

STF60N55F3 from STMicroelectronics is an N-channel 55 V, 6.5 mΩ (typ), 42 A continuous drain current, TO-220FP packaged Power MOSFET using STripFET™ III technology. It delivers low conduction loss and fast switching in high-current DC-DC converters, motor drive half-bridges, and industrial power supplies operating up to 175 °C junction temperature.

For engineers reviewing the STF60N55F3 datasheet, STF60N55F3 pinout, STF60N55F3 application, or STF60N55F3 equivalent, this device is selected for medium-power switching where thermal performance under forced-air cooling, avalanche ruggedness, and gate-drive compatibility with standard 10 V logic are critical design constraints.

Technical Context

This MOSFET employs STripFET™ III trench-gate process to achieve R_DS(on) ≤ 8.5 mΩ at V_GS = 10 V and I_D = 32 A, with total gate charge Q_g = 33.5 nC (typ) and gate-drain charge Q_gd = 9.5 nC (typ). Its 390 mJ single-pulse avalanche energy rating supports unclamped inductive load robustness.

Thermal resistance R_th(j-case) is 5 °C/W (max), enabling 30 W continuous dissipation at T_C = 25 °C. The source-drain diode exhibits t_rr = 47 ns (typ) and Q_rr = 87 nC (typ) under I_SD = 65 A, V_DD = 30 V, di/dt = 100 A/µs, T_j = 150 °C conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side switch or synchronous rectifier configurations.
R_DS(on)	6.5 mΩ (typ) at V_GS = 10 V, I_D = 32 A - Enables <1.3 W conduction loss at 42 A, reducing heatsink requirements.
I_D (cont)	42 A at T_C = 25 °C - Supports medium-power motor drives and SMPS outputs without parallel devices.
P_TOT	30 W at T_C = 25 °C - Defines maximum steady-state power handling before thermal derating applies.
Q_g	33.5 nC (typ) - Determines gate driver current demand and switching transition time in hard-switched topologies.
E_AS	390 mJ - Specifies energy-handling capability during inductive turn-off events without failure.
t_rr	47 ns (typ) - Limits reverse recovery losses and EMI generation when used as freewheeling diode.

Pinout & Package

STF60N55F3 uses TO-220FP package: insulated flange, vertical mounting, 3-pin through-hole configuration with integral heat sink tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level drive; threshold voltage V_GS(th) = 2–4 V ensures reliable turn-on with standard microcontroller outputs.
2 (Drain)	High-side power node	Connected to main power rail; electrically tied to metal tab for direct heatsinking-requires isolation washer if mounted to grounded chassis.
3 (Source)	Return path / reference	Serves as local ground reference for gate drive; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
STripFET™ III trench process	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs. prior-generation MOSFETs, improving efficiency in 100–500 kHz SMPS.
100% avalanche tested	Guarantees minimum 390 mJ single-pulse energy withstand without parameter shift-critical for relay/snubberless inductive loads.
Standard threshold drive	V_GS(th) range (2–4 V) allows direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
TO-220FP insulated package	Enables safe mounting to grounded heat sinks without electrical isolation hardware-reducing BOM cost and assembly steps.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 11.5 ns typ) minimizing shoot-through risk during PWM commutation.

Use Value: 6.5 mΩ R_DS(on) reduces conduction loss by ~35% vs. legacy 10 mΩ MOSFETs at 30 A, extending thermal margin in sealed enclosures.

Use Scenario: Synchronous rectifier in isolated 48 V → 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes; body diode recovery (t_rr = 47 ns) minimizes reverse recovery spikes.

Use Value: Q_rr = 87 nC enables lower EMI and reduced snubber losses compared to discrete diode solutions at 200 kHz switching.

Power Supplies

Lighting Ballasts

Use Scenario: Primary-side switch in 300 W AC-DC flyback or forward converters for industrial control panels.

IC Role / Device Role / Timing Role: High-voltage switching transistor with 55 V V_DS rating suitable for clamp-regulated topologies with reflected output voltage ≤ 45 V.

Use Value: 30 W P_TOT and 5 °C/W R_th(j-case) allow operation at 75 °C case temperature with passive cooling-eliminating fan dependency.

Use Scenario: Dimmable LED driver stage controlling constant-current output via PWM-modulated buck topology.

IC Role / Device Role / Timing Role: Main power switch toggling at 1–10 kHz; low Q_gd/Q_g ratio (0.28) ensures stable gate drive under variable duty cycle.

Use Value: Standard threshold enables direct PWM signal drive from MCU GPIO pins-removing need for dedicated gate drivers in cost-sensitive lighting designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V, I_D = 49 A, TO-220 package (non-insulated tab)	Higher conduction loss; requires insulating pad for grounded heatsinks; lower avalanche rating (E_AS = 120 mJ)	Choose only if gate drive voltage ≥ 12 V and mechanical isolation is acceptable.
STP60N55F3	Identical die, TO-220 (non-FP) package with conductive tab; R_th(j-case) = 1.36 °C/W, P_TOT = 110 W	Higher power handling but mandates electrical isolation hardware; unsuitable where chassis grounding is required.	Select when maximum thermal performance is prioritized and isolation components are acceptable in BOM.

Compared with IRFZ44NPBF, STF60N55F3 offers 4.3× lower R_DS(on) and certified avalanche ruggedness-critical for reliability in motor control. Versus STP60N55F3, it trades 3.7× higher thermal resistance for simplified mechanical integration in grounded-chassis systems.

Availability

STF60N55F3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and power supplies requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for STF60N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

STF60N55F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for STF60N55F3 at 100°C case temperature?

The maximum continuous drain current is 30 A at T_C = 100 °C, derived from the derating factor of 0.2 W/°C applied to its 30 W total dissipation rating. This value ensures safe operation within SOA limits when heatsink temperature remains below 100 °C under sustained load.

Does STF60N55F3 require a gate resistor for typical 10 V PWM drive?

Yes-a 4.7 Ω gate resistor is recommended per Figure 18 test conditions to limit peak gate current, dampen ringing, and control switching speed (t_d(on) ≈ 20 ns, t_f ≈ 11.5 ns). Omitting it risks overshoot, shoot-through, or EMI compliance failure in hard-switched circuits.

Can STF60N55F3 replace STP60N55F3 in an existing TO-220 footprint?

No-STF60N55F3 uses TO-220FP (insulated flange) with different mounting hole spacing and tab insulation, while STP60N55F3 uses standard TO-220 (conductive flange). Mechanical redesign and isolation verification are required for substitution.

What is the significance of the 2500 V RMS insulation rating for STF60N55F3?

The 2500 V RMS insulation withstand voltage (V_ISO) certifies safe operation between all three leads and external heatsink for 1 second at 25 °C. This enables direct mounting to grounded metal chassis without arcing risk-critical for Class I safety-compliant industrial equipment.

STF60N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF60N55F3 FAQ

1.How can I place an order for STF60N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF60N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF60N55F3 reliable?

The price and inventory of STF60N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF60N55F3 is usually 5 days.

3.What payment methods are accepted for STF60N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF60N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF60N55F3?

STF60N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF60N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF60N55F3?

For technical support, including STF60N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF60N55F3 requirements.

6.How does Aetrix verify that STF60N55F3 is sourced from the original manufacturer or authorized distributors?

All STF60N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF60N55F3 meets industry standards.

7.What is the process for return or replacement of STF60N55F3?

All STF60N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STF60N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF60N55F3 part is unused and in its original packaging.

Return procedure for STF60N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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