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STMicroelectronics STF6N52K3

Part No.:
STF6N52K3
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixSTF6N52K3.pdf
Description:
MOSFET N-CH 525V 5A TO220FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:979

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Product details

Overview

STF6N52K3 from STMicroelectronics is an N-channel 525 V, 1.2 Ω (max), 5 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, featuring 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and Zener-protected gate, designed for high-efficiency flyback and resonant SMPS primary-side switching.

For engineers reviewing the STF6N52K3 datasheet, STF6N52K3 pinout, STF6N52K3 application, or STF6N52K3 equivalent, key selection criteria include avalanche energy rating (110 mJ), reverse recovery charge (1.4 µC), thermal resistance junction-to-case (1.79 °C/W), and built-in gate-source Zener clamping (±30 V).

Technical Context

This MDmesh™ K3 device employs a vertically optimized silicon structure to reduce RDS(on) while maintaining high voltage blocking and fast dynamic performance. Its low Ciss (670 pF typ.) and ultra-low Coss (54 pF typ.) enable high-frequency operation with minimal switching loss.

The integrated source-drain diode exhibits improved reverse recovery characteristics (trr = 206 ns at Tj = 25 °C), and the Zener-protected gate ensures robust ESD immunity without external components. The device operates reliably up to Tj = 150 °C with defined SOA limits across pulse widths from 10 µs to DC.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 525 V - Sustains full mains-referenced DC bus voltages in universal-input offline converters.
RDS(on) max 1.2 Ω @ VGS = 10 V, ID = 2.5 A - Enables low conduction loss in 5–7 A peak-current SMPS designs.
EAS 110 mJ - Supports unclamped inductive switching in hard-switched topologies without external snubbers.
Qg 26 nC - Optimized for efficient gate drive with standard 1-A peak drivers at >100 kHz switching frequencies.
Coss eq. 40 pF - Reduces capacitive turn-on loss and improves light-load efficiency in resonant LLC converters.
trr 206 ns - Minimizes diode commutation loss and associated voltage overshoot during ZVS transitions.
Rthj-case 1.79 °C/W - Allows 70 W dissipation with ≤127 °C case temperature rise above ambient under heatsink mounting.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for enhanced thermal conduction and electrical connection to heatsink or PCB ground plane. Standard 3-pin configuration with gull-wing leads.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate High-impedance control terminal requiring <26 nC total charge for full enhancement; Zener-clamped to ±30 V.
2 (D, TAB) Drain / Exposed Pad Main high-voltage power terminal and thermal interface; electrically connected to drain; must be soldered to copper pour for thermal management.
3 (S) Source Power return path and reference node for gate drive; forms common node with internal body diode cathode.

Key Features

Feature Design Value
100% avalanche tested Guarantees single-pulse avalanche capability up to 110 mJ at Tj = 25 °C - eliminates need for derating in transient-overvoltage conditions.
Extremely high dv/dt capability 12 V/ns rated - prevents false turn-on during fast voltage transients in high-side configurations without extra gate resistors.
Very low intrinsic capacitance Ciss = 670 pF, Coss = 54 pF - reduces switching losses and EMI generation in >200 kHz SMPS designs.
Zener-protected gate Integrated back-to-back Zener diodes clamp VGS to ±30 V - removes requirement for external gate protection networks.
Improved diode reverse recovery Qrr = 1.4 µC, trr = 206 ns - lowers diode switching loss and stress on synchronous rectifiers in quasi-resonant converters.

Applications

Industrial SMPS LED Driver Power Stage

Use Scenario: Primary-side switch in 60–150 W universal-input flyback converters for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 65–130 kHz with discontinuous conduction mode.

Use Value: 525 V rating accommodates 385 VDC bulk input with margin; 1.2 Ω RDS(on) maintains >89% efficiency at full load.

Use Scenario: Buck-boost PFC + isolated flyback stage in outdoor-rated LED streetlight drivers.

IC Role / Device Role / Timing Role: Active clamp switch in transition-mode PFC controller; handles 5 A peak current with tight trr-driven timing control.

Use Value: Low Qrr (1.4 µC) minimizes dead-time loss; Zener gate protection ensures reliability in humid, high-ESD environments.

AC-DC Adapters Server PSU Front-End

Use Scenario: Main switch in compact 45 W USB-C PD adapter with GaN-assisted topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver companion switch; switches at 100–150 kHz with precise gate timing.

Use Value: 26 nC Qg enables clean edge control using low-cost 1-A drivers; DPAK footprint simplifies layout in space-constrained designs.

Use Scenario: Primary switch in 80+ Titanium server PSU LLC resonant half-bridge auxiliary supply.

IC Role / Device Role / Timing Role: High-efficiency, low-noise HV switch operating in soft-switching region; leverages low Coss eq. (40 pF) for ZVS initiation.

Use Value: 40 pF Coss eq. reduces turn-on loss by 35% vs legacy superjunction MOSFETs; 1.79 °C/W Rthj-case supports forced-air cooling at 70 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP6N52K3 TO-220 package; higher Rthj-case (1.25 °C/W); identical electrical specs. Better suited for through-hole prototyping and lower-volume industrial supplies with larger heatsinks. Select when mechanical mounting flexibility and manual assembly outweigh surface-mount density requirements.
STB6N52K3 D²PAK (TO-263) package; lower Rthj-case (0.95 °C/W); same die and ratings. Preferred for high-power-density server/telecom PSUs requiring superior thermal performance at >6 A continuous. Choose when junction temperature must stay below 125 °C under 70 W sustained dissipation with limited airflow.

Compared with STF6N52K3, STP6N52K3 trades surface-mount compactness for easier heatsinking and manual handling, while STB6N52K3 delivers 47% lower thermal resistance but requires larger PCB real estate - all three share identical avalanche, switching, and gate protection behavior.

Availability

STF6N52K3 is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, AC-DC adapters, and server PSU front-end designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF6N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF6N52K3 belongs to the MDmesh™ K3 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space- and thermally-constrained applications.

FAQ

Is STF6N52K3 pin-compatible with STD6N52K3?

Yes - STF6N52K3 and STD6N52K3 share identical DPAK (TO-252) pinout (G-D-S), same electrical specifications, and identical MDmesh™ K3 die. The difference lies only in packaging grade and tape/reel configuration per ST's revision history; both are functionally interchangeable in layout and circuit design.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 3 A at TC = 100 °C, as specified in Table 1 of DS5919 Rev 3. This derating reflects thermal limitations of the DPAK package; operation above this current requires active cooling or reduced ambient temperature to maintain safe junction temperature.

Does STF6N52K3 require external gate protection?

No - STF6N52K3 integrates back-to-back Zener diodes between gate and source, rated for ±30 V breakdown. This eliminates the need for external TVS or Zener clamps in typical gate-drive circuits, provided gate drive voltage stays within ±20 V and peak transient energy remains within diode power limits.

Can STF6N52K3 be used in hard-switched forward converters?

Yes - its 100% avalanche-tested 110 mJ single-pulse energy rating and 12 V/ns dv/dt capability make it suitable for hard-switched forward topologies with proper snubber design. However, its 5 A continuous rating and 70 W power dissipation limit use to ≤100 W output designs with adequate heatsinking and airflow.

STF6N52K3 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH3™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
525 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
670 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP

STF6N52K3 FAQ

1.How can I place an order for STF6N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF6N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF6N52K3 reliable?

The price and inventory of STF6N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF6N52K3 is usually 5 days.

3.What payment methods are accepted for STF6N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF6N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF6N52K3?

STF6N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF6N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF6N52K3?

For technical support, including STF6N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF6N52K3 requirements.

6.How does Aetrix verify that STF6N52K3 is sourced from the original manufacturer or authorized distributors?

All STF6N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF6N52K3 meets industry standards.

7.What is the process for return or replacement of STF6N52K3?

All STF6N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF6N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF6N52K3 part is unused and in its original packaging.

Return procedure for STF6N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STF6N52K3 Tags

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