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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF6N62K3

Name: STF6N62K3
Brand: STMicroelectronics
SKU: STF6N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF6N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF6N62K3.pdf

Description:: MOSFET N-CH 620V 5.5A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:852

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Product details

Overview

STF6N62K3 from STMicroelectronics is an N-channel 620 V, 0.95 Ω typ. (1.2 Ω max), 5.5 A MDmesh K3 Power MOSFET in IPAK (TO-251) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters where high dv/dt immunity and low output capacitance are critical.

For engineers reviewing the STF6N62K3 datasheet, STF6N62K3 pinout, STF6N62K3 application, or STF6N62K3 equivalent, key selection criteria include avalanche ruggedness (140 mJ EAS), Zener-protected gate, 12 V/ns diode recovery dv/dt capability, and optimized Coss(er) of 28 pF for reduced switching loss in hard-switched topologies.

Technical Context

This device employs ST's MDmesh K3 vertical structure with enhanced charge balancing, delivering lower RDS(on) × Qg figure-of-merit than prior K2 generation. Its intrinsic gate resistance (3.5 Ω) and low Crss (17 pF) enable fast, controllable turn-off with minimal Miller-induced oscillation.

The integrated Zener-protected gate withstands ±30 V stress, while the source-drain diode features improved trr (290 ns @ 25 °C) and reduced Qrr (1.9 µC), supporting quasi-resonant and LLC converter operation without external snubbing in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports 400 VAC mains-derived bus voltages with ≥20% margin for transients
R_DS(on) max	1.2 Ω - ensures <1.3 W conduction loss at 5.5 A continuous drain current
I_D (cont)	5.5 A @ T_C = 25 °C - defines thermal design baseline for heatsink sizing
E_AS	140 mJ - enables unclamped inductive switching without failure up to rated current
C_oss(er)	28 pF - reduces stored energy in output capacitance, lowering turn-on loss in hard-switched converters
dv/dt rating	12 V/ns - sustains rapid voltage transients during commutation without spurious turn-on
Q_g	34 nC - determines gate driver power requirement and switching speed trade-off

Pinout & Package

IPAK (TO-251) package with isolated tab (Drain-connected), 3-pin single-ended leadframe. Thermal resistance R_thJC = 1.39 °C/W enables high-power density mounting on PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; Zener-clamped to ±30 V, requires 10 V drive for full enhancement
2 (TAB)	Drain	High-side power node; electrically connected to exposed metal tab for low-inductance heat path
3 (S)	Source	Power return and reference for gate drive; tied to PCB ground plane for EMI control

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 140 mJ at 25 °C, enabling robust overvoltage survival in flyback and forward converters
Extremely high dv/dt capability	12 V/ns rating prevents false triggering during fast V_DS transitions in bridge-leg configurations
Very low intrinsic capacitance	C_iss = 875 pF, C_oss = 100 pF - minimizes capacitive losses and improves light-load efficiency
Zener-protected gate	Integrated 30 V Zener clamps gate-source voltage, eliminating need for external gate protection components
Improved diode reverse recovery	Q_rr = 1.9 µC, t_rr = 290 ns - reduces switching loss and EMI in discontinuous conduction mode (DCM) PFC

Applications

Industrial Motor Drives

Server PSU Active PFC

Use Scenario: Half-bridge IGBT/MOSFET gate driver stage in 3-phase inverter for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling 400–600 V DC bus with 10–20 kHz PWM.

Use Value: Low R_DS(on) and high avalanche margin reduce thermal stress during motor stall or short-circuit events.

Use Scenario: Boost switch in continuous conduction mode (CCM) active PFC front-end for 1–3 kW server power supplies.

IC Role / Device Role / Timing Role: Main switching transistor operating at 65–100 kHz with high duty-cycle variation.

Use Value: Optimized C_oss(er) and low Q_g minimize turn-on loss and improve efficiency above 96% at full load.

Offline LED Driver

Photovoltaic Microinverter

Use Scenario: Flyback primary switch in constant-current LED drivers for street lighting (230 VAC input).

IC Role / Device Role / Timing Role: Primary-side power switch subjected to repetitive unclamped inductive spikes.

Use Value: 100% avalanche testing ensures reliability under line surge and output short conditions without derating.

Use Scenario: H-bridge switching device in transformerless microinverters interfacing 30–60 V PV panels to 230 VAC grid.

IC Role / Device Role / Timing Role: High-voltage leg switch in bipolar PWM topology with bidirectional current capability.

Use Value: Fast, soft-recovery body diode enables zero-voltage switching (ZVS) assist and reduces reverse recovery loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N62K3	Same die, TO-220 package; R_thJC = 1.0 °C/W vs. 1.39 °C/W; higher thermal performance but larger footprint	Better suited for forced-air-cooled industrial PSUs where board space allows	Select when thermal budget is tighter than board area constraints
IPP60R190C7	600 V, 190 mΩ, 30 A CoolMOS C7; lower R_DS(on) but higher Q_g (53 nC); no integrated Zener	Preferred in high-frequency resonant converters where conduction loss dominates	Choose only if gate drive strength and external protection are available

Compared with STP6N62K3, STF6N62K3 trades 0.39 °C/W higher junction-to-case resistance for 40% smaller footprint and simplified mounting; versus IPP60R190C7, it offers superior avalanche ruggedness and gate protection at the cost of higher conduction loss above 3 A.

Availability

STF6N62K3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU active PFC stages, and offline LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for STF6N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K3 series targets high-efficiency, high-reliability power conversion in 500–800 V applications, emphasizing ruggedness, low switching loss, and ease of use through integrated protection features.

FAQ

What is the maximum safe operating temperature for STF6N62K3?

The STF6N62K3 has a specified operating junction temperature range of –55 °C to 150 °C. Continuous operation at TJ = 150 °C requires strict thermal design: with R_thJC = 1.39 °C/W and P_TOT = 90 W at T_C = 25 °C, actual case temperature must be held ≤ 65 °C to maintain margin. Derating is mandatory above 25 °C ambient.

Does STF6N62K3 require external gate protection?

No. The device integrates a Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external TVS or Zener diodes in most designs. However, a series gate resistor (typically 10–47 Ω) remains necessary to dampen ringing and control dV/dt during switching.

How does the body diode performance compare to standard MOSFETs?

STF6N62K3 features improved reverse recovery characteristics: t_rr = 290 ns and Q_rr = 1.9 µC at 25 °C, significantly better than legacy 600 V MOSFETs (typically >500 ns, >5 µC). This reduces switching loss and EMI in hard-switched PFC and flyback converters, especially under light-load DCM conditions.

Can STF6N62K3 replace STU6N62K3 in existing designs?

Yes - STF6N62K3 and STU6N62K3 share identical electrical specifications, thermal ratings, and pinout. The difference is purely in packaging: STU6N62K3 uses IPAK (TO-251), same as STF6N62K3. Per ST's DS5818 Rev 5 (Oct 2023), both part numbers refer to the same die and package; STF6N62K3 is the current orderable designation.

STF6N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.28Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 875 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF6N62K3 FAQ

1.How can I place an order for STF6N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF6N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF6N62K3 reliable?

The price and inventory of STF6N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF6N62K3 is usually 5 days.

3.What payment methods are accepted for STF6N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF6N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF6N62K3?

STF6N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF6N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF6N62K3?

For technical support, including STF6N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF6N62K3 requirements.

6.How does Aetrix verify that STF6N62K3 is sourced from the original manufacturer or authorized distributors?

All STF6N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF6N62K3 meets industry standards.

7.What is the process for return or replacement of STF6N62K3?

All STF6N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF6N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF6N62K3 part is unused and in its original packaging.

Return procedure for STF6N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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