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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF6N65M2

Name: STF6N65M2
Brand: STMicroelectronics
SKU: STF6N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF6N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF6N65M2.pdf

Description:: MOSFET N-CH 650V 4A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:285

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Product details

Overview

STF6N65M2 from STMicroelectronics is an N-channel 650 V, 1.2 Ω typ. (1.35 Ω max), 4 A MDmesh™ M2 Power MOSFET in TO-220FP package, designed for high-efficiency switching converters requiring low gate charge (9.8 nC), low output capacitance (12.8 pF), and robust avalanche capability (100 mJ). It serves as a primary switching device in offline SMPS and PFC stages.

For engineers reviewing the STF6N65M2 datasheet, STF6N65M2 pinout, STF6N65M2 application, or STF6N65M2 equivalent, key selection criteria include its 650 V V_(BR)DSS, 1.35 Ω R_DS(on) at 10 V_GS, 15 V/ns dv/dt ruggedness, Zener-protected gate, and 100% avalanche-tested reliability under unclamped inductive load conditions.

Technical Context

This MOSFET employs ST's MDmesh™ M2 strip-based silicon process, delivering optimized vertical structure for reduced conduction and switching losses. Its low C_oss (12.8 pF) and C_rss (0.65 pF) enable fast, low-loss hard-switching in 65–100 kHz flyback and LLC resonant topologies.

The device features integrated Zener gate protection (±25 V_GS rating), 100% single-pulse avalanche testing (E_AS = 100 mJ), and a source-drain diode with 260 ns t_rr and 1.2 µC Q_rr at T_j = 25 °C - critical for reducing commutation loss in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands full mains-referred DC bus in universal-input 85–265 VAC systems without derating.
R_DS(on) max	1.35 Ω @ V_GS = 10 V, I_D = 2 A - Enables <1.5 W conduction loss at 4 A continuous drain current in TO-220FP package.
Q_g	9.8 nC - Reduces gate drive power and enables use of low-cost, low-current drivers in high-frequency designs.
C_oss	12.8 pF - Minimizes turn-off energy loss and improves efficiency in hard-switched topologies above 65 kHz.
E_AS	100 mJ - Guarantees reliable operation under unclamped inductive switching stress without external snubbers.
t_r/t_f	7 ns / 20 ns - Supports clean, low-EMI switching transitions with minimal overlap loss in synchronous rectification.

Pinout & Package

STF6N65M2 uses the TO-220FP (Full-Pak) package: insulated plastic case with integral heatsink tab, enabling direct mounting to PCB without insulating washer. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal; requires ≤10 V drive for full enhancement; protected by integrated Zener diode.
Pin 2 (D)	Drain	Internally connected to metal tab; electrically isolated from heatsink via molded plastic; rated for 2500 V_RMS insulation.
Pin 3 (S)	Source	Power return path and reference for gate drive; forms common node with body diode cathode in half-bridge configurations.

Key Features

Feature	Design Value
Extremely low gate charge	9.8 nC total gate charge reduces driver power dissipation and enables >100 kHz operation with standard gate drivers.
Optimized COSS profile	12.8 pF Coss + 0.65 pF Crss yields low turn-off loss and stable voltage-dependent capacitance across 0–520 V range.
Zener-protected gate	Integrated bidirectional Zener clamps gate-source voltage to ±25 V, eliminating need for external gate protection components.
100% avalanche tested	Each unit validated for 100 mJ single-pulse avalanche energy, ensuring robustness in overvoltage transients and layout parasitics.

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-density 1 kW server power supply operating at 85–265 VAC input with active PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage; handles 4 A RMS current at 100 kHz with low conduction and switching loss.

Use Value: 1.35 Ω R_DS(on) and 9.8 nC Q_g reduce thermal stress and improve efficiency beyond 94% at full load.

Use Scenario: DIN-rail mounted 24 V/20 A industrial AC-DC adapter with universal input and reinforced isolation.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback converter; operates in boundary conduction mode at 65–110 kHz.

Use Value: 650 V V_(BR)DSS and 15 V/ns dv/dt ruggedness prevent false triggering during line surges and transformer ringing.

LED Streetlight Driver

Telecom Rectifier Module

Use Scenario: Outdoor-rated 150 W constant-current LED driver with surge immunity up to 6 kV (line-earth).

IC Role / Device Role / Timing Role: High-side switch in buck-boost topology; withstands repeated 100 mJ avalanche events during lightning-induced transients.

Use Value: 100% avalanche-tested design eliminates need for external clamping circuits, reducing BOM cost and board area.

Use Scenario: -48 V telecom rectifier module converting 230 VAC to regulated DC with hot-swap and OR-ing capability.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge; leverages low Coss for ZVS transition at 100 kHz.

Use Value: 114 pF Coss_eq (0–520 V) ensures predictable soft-start behavior and minimizes dead-time loss in ZVS operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6N65M2	Same die, TO-220 package (non-insulated tab); R_th(j-case) = 2.08 °C/W vs. 6.25 °C/W for STF6N65M2.	Requires insulating washer and thermal pad; better suited for heatsink-mounted discrete designs with mechanical isolation constraints.	Select when higher power dissipation (>20 W) demands lower thermal resistance and PCB mounting is not required.
IPP60R099C6	Infineon CoolMOS™ C6; 600 V, 0.099 Ω, 12 A; Q_g = 27 nC; no integrated Zener protection.	Higher current rating but larger gate drive requirement; lacks built-in gate protection and avalanche validation.	Choose only if system-level gate protection and snubber design are already implemented and higher current headroom is needed.

Compared with STP6N65M2, STF6N65M2 trades thermal performance for PCB-mount safety and simplified assembly; versus IPP60R099C6, it offers lower gate drive burden and guaranteed avalanche ruggedness at the cost of higher R_DS(on) and lower current rating.

Availability

STF6N65M2 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, LED streetlight drivers, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STF6N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STF6N65M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating in harsh industrial and telecom environments.

FAQ

What is the maximum continuous drain current for STF6N65M2 at 100 °C case temperature?

The maximum continuous drain current is 2.5 A at T_C = 100 °C, as specified in Table 2 of the preliminary datasheet. This rating is limited by junction temperature and reflects safe operation with adequate heatsinking in TO-220FP package.

Does STF6N65M2 have integrated gate protection?

Yes - STF6N65M2 includes an integrated bidirectional Zener diode between gate and source, providing ±25 V gate-source voltage clamping. This eliminates the need for external gate protection components in most standard drive configurations.

Can STF6N65M2 be used in zero-voltage switching (ZVS) topologies?

Yes - its low and well-characterized C_oss (12.8 pF) and C_oss,eq (114 pF over 0–520 V) enable predictable resonant tank behavior in LLC and phase-shifted full-bridge converters, supporting reliable ZVS operation up to 150 kHz.

Is STF6N65M2 suitable for automotive applications?

No - STF6N65M2 is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension (−40 to 175 °C), or PPAP documentation. It is intended for industrial, telecom, and commercial power supply applications only.

STF6N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 226 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF6N65M2 FAQ

1.How can I place an order for STF6N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF6N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF6N65M2 reliable?

The price and inventory of STF6N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF6N65M2 is usually 5 days.

3.What payment methods are accepted for STF6N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF6N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF6N65M2?

STF6N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF6N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF6N65M2?

For technical support, including STF6N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF6N65M2 requirements.

6.How does Aetrix verify that STF6N65M2 is sourced from the original manufacturer or authorized distributors?

All STF6N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF6N65M2 meets industry standards.

7.What is the process for return or replacement of STF6N65M2?

All STF6N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF6N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF6N65M2 part is unused and in its original packaging.

Return procedure for STF6N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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