STMicroelectronics STF6N80K5

Overview

STF6N80K5 from STMicroelectronics is an N-channel 800 V, 4.5 A high-voltage Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.3 Ω typical R_DS(on), 13 nC total gate charge, and 100% avalanche-tested ruggedness for offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STF6N80K5 datasheet, STF6N80K5 pinout, STF6N80K5 application, or STF6N80K5 equivalent, key selection criteria include its 800 V V_DS, ultra-low FoM (R_DS(on) × Q_g = 16.9 Ω·nC), Zener-protected gate, and 2.5 kV insulation rating - critical for high-reliability flyback and resonant converter designs.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 270 pF C_iss, 0.7 pF Crss, and 50 V/ns dv/dt ruggedness enable stable operation in hard-switched topologies up to 400 V bus voltage.

The integrated body diode exhibits 280 ns trr at 25 °C and 450 ns at 150 °C, with 2.2 µC Q_rr (25 °C) and 3.15 µC (150 °C), supporting moderate-frequency discontinuous conduction mode (DCM) PFC without external SiC diode replacement.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with integral heatsink tab; no metal tab exposure - enables direct mounting to PCB without insulator washer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF6N80M2 and IPP60R190C7, the STF6N80K5 uniquely balances 800 V capability, Zener gate protection, and FoM-optimized switching - making it the sole choice for universal-input, high-reliability industrial SMPS where voltage margin and ruggedness are non-negotiable.

Availability

STF6N80K5 is available at Aetrix Electronics and suitable for industrial flyback SMPS, active PFC boost stages, and HV LED drivers requiring stable component supply across extended product lifecycles.

Supply support for STF6N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh K5 series targets high-efficiency, high-voltage power conversion - specifically engineered for offline SMPS, PFC, and industrial motor drive inverters demanding both ruggedness and low FoM.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF6N80K5 supports 2.8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9678 Rev 5. This derating reflects thermal limits of the TO-220FP package with R_thJC = 5 °C/W; proper heatsinking is required to sustain this current without exceeding T_J = 150 °C.

Does the device include integrated gate protection?

Yes - the STF6N80K5 integrates bidirectional Zener clamping between gate and source, rated for ±30 V V_GS. This eliminates the need for external gate protection components in most applications, confirmed by the "Zener-protected" feature statement and absolute maximum rating table.

Can STF6N80K5 replace STF6N80M2 in existing designs?

Direct replacement is possible only if the design operates within 800 V stress and does not rely on the M2's lower R_DS(on) at high frequency. The K5 has higher Q_g (13 nC vs. 16 nC) but adds Zener protection and improved avalanche rating - verify gate driver capability and thermal margin before substitution.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At t_p = 100 µs, the SOA is limited by R_DS(on) conduction, allowing up to ~10 A at V_DS = 100 V (per Figure 1). At higher V_DS, current must be reduced to stay within the single-pulse power limit - e.g., 2.5 A at 400 V - to avoid junction overheating beyond 150 °C.