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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF6N95K5

Name: STF6N95K5
Brand: STMicroelectronics
SKU: STF6N95K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF6N95K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF6N95K5.pdf

Description:: MOSFET N-CH 950V 9A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF6N95K5 from STMicroelectronics is a 950 V, 9 A N-channel Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.25 Ω max R_DS(on), 13 nC total gate charge, and 2.5 kV RMS insulation withstand voltage, enabling high-voltage switching in offline SMPS, industrial inverters, and arc welding equipment.

For engineers reviewing the STF6N95K5 datasheet, STF6N95K5 pinout, STF6N95K5 application, or STF6N95K5 equivalent, key selection criteria include avalanche ruggedness (90 mJ E_AS), dv/dt immunity (50 V/ns MOSFET ruggedness), Zener-protected gate, and 100% UIS-tested reliability under unclamped inductive loads.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical superjunction architecture to achieve ultra-low R_DS(on) × Q_g figure of merit-critical for reducing conduction and switching losses in high-frequency, high-voltage topologies. Its 5 Ω/W junction-to-case thermal resistance supports forced-air-cooled designs up to 25 W continuous dissipation.

The integrated body diode features 372 ns typical reverse recovery time at 25 °C and 522 ns at 150 °C, with 4–5 µC Q_rr, making it suitable for hard-switched PFC and resonant converters where diode softness impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - Supports 800 V DC bus designs with 150 V margin for transient overvoltage in industrial AC/DC front-ends.
R_DS(on) max	1.25 Ω @ V_GS = 10 V, I_D = 3 A - Enables <11.3 W conduction loss at 9 A, critical for thermally constrained TO-220FP layouts.
Q_g	13 nC - Reduces gate drive power and enables use of low-current drivers in high-frequency (>100 kHz) flyback or LLC controllers.
E_AS	90 mJ - Confirmed single-pulse avalanche energy at T_J = 25 °C, ensuring robustness against inductive switching faults without external snubbers.
V_ISO	2.5 kV RMS - Allows direct mounting on insulated heat sinks in Class I safety-compliant power supplies without additional isolation barriers.
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during hard commutation, preventing spurious turn-on in high-dV/dt environments like motor drives.

Pinout & Package

TO-220FP (Type B) package: full-molded, isolated tab, vertical mounting with screw-hole for heatsink attachment. Tab is drain-connected; no internal isolation between drain and case.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal requiring ≤±30 V bias; 7 Ω intrinsic gate resistance limits ringing in fast-switching layouts.
2 (D)	Drain	High-voltage output node connected to molded tab; electrically isolated from PCB but thermally coupled to heatsink via 2.5 kV RMS barrier.
3 (S)	Source	Power return path and gate reference; tied to low-side switch node in half-bridge configurations; carries full load current (9 A continuous).

Key Features

Feature	Design Value
Ultra-low gate charge	13 nC total charge enables <100 ns switching transitions with 1 A gate driver, minimizing overlap loss in high-frequency SMPS.
Zener-protected gate	Integrated ±30 V gate-body Zener clamps ESD and transient overvoltage, eliminating need for external gate protection components.
100% avalanche tested	Every unit undergoes unclamped inductive switching stress test per JEDEC JESD22-A109, guaranteeing UIS reliability in real-world fault conditions.
MDmesh K5 technology	Vertical superjunction structure achieves 1.25 Ω R_DS(on) at 950 V - 35% lower on-resistance than prior-generation K3 devices at same voltage rating.

Applications

Industrial AC/DC Power Supplies

Offline LED Drivers

Use Scenario: Primary-side switch in 150–300 W universal-input flyback or quasi-resonant converters powering factory automation controls.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus, operating at 65–130 kHz with zero-voltage switching assistance.

Use Value: 90 mJ E_AS and 50 V/ns dv/dt ruggedness prevent failure during line surges and transformer leakage spikes without snubber networks.

Use Scenario: Constant-current buck-boost stage in outdoor-rated streetlight drivers accepting 277–480 V AC input.

IC Role / Device Role / Timing Role: Main power switch regulating LED string current in high-line, high-temperature ambient (T_C ≥ 100 °C) environments.

Use Value: 6 A continuous current at T_C = 100 °C and low R_DS(on) minimize thermal derating and enable compact heatsink design.

Induction Heating Systems

Plasma Ignition Modules

Use Scenario: Half-bridge upper switch in 2–5 kW resonant inverters driving induction cooktops or metal melting furnaces.

IC Role / Device Role / Timing Role: Fast-turning high-side switch subjected to repetitive 10–30 kHz hard-commutation with >1 kV peak V_DS.

Use Value: 36 A pulsed drain current rating and 372 ns diode t_rr reduce switching loss and diode reverse recovery stress in asymmetrical resonant topologies.

Use Scenario: Primary-side switch in capacitor-discharge ignition (CDI) modules for gas turbine starters and industrial burners.

IC Role / Device Role / Timing Role: Energy-storage discharge switch triggering plasma arcs with 1–5 kV pulses and sub-microsecond rise times.

Use Value: 2.5 kV RMS insulation withstand voltage ensures safe operation across spark-gap isolation barriers without creepage/clearance redesign.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK90Z	900 V rating, 0.42 Ω typ R_DS(on), 20 A ID, TO-247 package - higher current, lower voltage, larger footprint.	Preferred for >15 A continuous designs with ample heatsinking; unsuitable for space-constrained TO-220FP layouts.	Select when higher current headroom and lower conduction loss outweigh board area and cost constraints.
IPP60R099C7	650 V rating, 0.099 Ω R_DS(on), 60 A ID, TO-220 package - lower voltage, much lower R_DS(on), no isolation.	Only viable in 400 V DC bus systems; lacks 2.5 kV isolation and avalanche rating; requires external gate protection.	Choose only for 650 V-class designs prioritizing ultra-low conduction loss and cost, with no safety isolation requirement.

Compared with STW20NK90Z and IPP60R099C7, STF6N95K5 uniquely balances 950 V capability, TO-220FP form factor, integrated isolation, and guaranteed avalanche performance-making it the sole option for compact, safety-certified, high-reliability 800 V+ offline switching.

Availability

STF6N95K5 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, offline LED drivers, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for STF6N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STF6N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion where voltage rating, avalanche robustness, and thermal performance are mission-critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF6N95K5 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10359 Rev 3. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within its 5 °C/W R_thJC constraint without exceeding 150 °C maximum junction temperature.

Does the device include an integrated body diode, and what are its key recovery characteristics?

Yes, STF6N95K5 integrates a source-drain diode rated for 9 A continuous and 36 A pulsed current. At 25 °C, it exhibits 372 ns reverse recovery time (t_rr) and 4 µC reverse recovery charge (Q_rr) under ISD = 6 A, di/dt = 100 A/µs, and VDD = 60 V conditions-values confirmed in Table 7 of the datasheet.

Is the TO-220FP package electrically isolated, and what is its insulation rating?

Yes, the TO-220FP package provides electrical isolation between all three leads (G, D, S) and the external heatsink. Its insulation withstand voltage is rated at 2.5 kV RMS for 1 second at 25 °C, verified per IEC 60747-5-2, enabling direct mounting on grounded metal chassis without additional insulating hardware.

How is avalanche ruggedness validated for this MOSFET?

Each STF6N95K5 unit undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD22-A109. The device is stressed with I_AR = 3 A and E_AS = 90 mJ at T_J = 25 °C, using the test circuit in Figure 17 of DS10359. No parameter degradation is allowed post-test, ensuring field reliability in fault-prone power stages.

STF6N95K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.25Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF6N95K5 FAQ

1.How can I place an order for STF6N95K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF6N95K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF6N95K5 reliable?

The price and inventory of STF6N95K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF6N95K5 is usually 5 days.

3.What payment methods are accepted for STF6N95K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF6N95K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF6N95K5?

STF6N95K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF6N95K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF6N95K5?

For technical support, including STF6N95K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF6N95K5 requirements.

6.How does Aetrix verify that STF6N95K5 is sourced from the original manufacturer or authorized distributors?

All STF6N95K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF6N95K5 meets industry standards.

7.What is the process for return or replacement of STF6N95K5?

All STF6N95K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF6N95K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF6N95K5 part is unused and in its original packaging.

Return procedure for STF6N95K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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