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STMicroelectronics STF7LN80K5

Name: STF7LN80K5
Brand: STMicroelectronics
SKU: STF7LN80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF7LN80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF7LN80K5.pdf

Description:: MOSFET N-CH 800V 5A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF7LN80K5 from STMicroelectronics is an N-channel 800 V, 5 A high-voltage Power MOSFET in TO-220FP package, fabricated with MDmesh K5 vertical structure. It delivers 0.95 Ω typ. R_DS(on), 12 nC total gate charge, and 200 mJ single-pulse avalanche energy-enabling high-efficiency switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STF7LN80K5 datasheet, STF7LN80K5 pinout, STF7LN80K5 application, or STF7LN80K5 equivalent, key selection criteria include its 800 V V_DS, Zener-protected gate, 100% avalanche-tested ruggedness, and ultra-low FoM (R_DS(on) × Q_g = 11.4 nΩ·F) for high-density power stages.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 270 pF C_iss, 0.5 pF Crss, and 48 pF Co(tr) support fast, low-noise hard-switching up to 100 kHz in continuous conduction mode.

The integrated Zener-protected gate withstands ±30 V V_GS, while the 2.5 kV RMS insulation rating between leads and heat sink enables reinforced isolation in Class I/II AC-input systems. Avalanche capability is validated at 1.5 A repetitive I_AR and 200 mJ E_AS at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 650 V AC mains designs with ≥23% margin against line surges
R_DS(on) max	1.15 Ω - ensures ≤5.8 W conduction loss at 5 A DC, enabling TO-220FP thermal operation up to 100 °C case temp
Q_g	12 nC - reduces gate drive power and enables use of low-current drivers (e.g., 100 mA peak)
E_AS	200 mJ - sustains unclamped inductive turn-off events without failure in PFC or flyback snubberless designs
C_oss	22 pF - minimizes capacitive turn-on loss and improves light-load efficiency in QR flybacks
R_thJC	5 °C/W - allows 25 W dissipation with ≤125 °C junction rise above 25 °C case, supporting compact heatsink sizing
dV/dt ruggedness	50 V/ns - prevents spurious turn-on during high-slew-rate commutation in bridge configurations

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, 3-pin through-hole. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Tab is electrically connected to Drain and thermally coupled to case.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Accepts 10 V logic-level drive; Zener-clamped to ±30 V; requires <12 nC charge for full enhancement
Pin 2 (D)	High-voltage drain node	Connected to internal die backside and insulated tab; rated for 800 V blocking and 2.5 kV isolation to heatsink
Pin 3 (S)	Source reference and return path	Serves as local ground reference for gate drive; carries full load current (5 A continuous, 20 A pulsed)

Key Features

Feature	Design Value
Ultra-low gate charge	12 nC total charge enables <1 µs turn-on with 12 mA average gate current, reducing driver stress
Very low FoM (R_DS(on) × Q_g)	11.4 nΩ·F - benchmark figure of merit for high-voltage MOSFETs, directly improving power density in 100–300 W adapters
Zener-protected gate	Integrated bidirectional Zener clamps gate-to-source to ±30 V, eliminating need for external TVS in most layouts
100% avalanche tested	Each unit undergoes single-pulse E_AS validation at 200 mJ, ensuring robustness in real-world overvoltage transients
MDmesh K5 vertical structure	Proprietary superjunction process achieves 25% lower R_DS(on) vs prior K3 generation at same voltage class

Applications

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: Primary-side switch in 300–500 W active clamp forward or LLC resonant converters operating from 85–264 VAC input.

IC Role / Device Role / Timing Role: High-voltage switching element handling 800 V blocking and 5 A peak primary current with <10 ns turn-off delay.

Use Value: 0.95 Ω R_DS(on) and 12 nC Q_g reduce conduction + switching losses by 18% vs comparable 800 V MOSFETs, enabling >94% efficiency at full load.

Use Scenario: PFC boost switch in 1 kW front-end rectifiers with interleaved dual-phase topology.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged device managing 650 V DC bus and 10 A pulsed current per phase.

Use Value: 50 V/ns dV/dt ruggedness prevents false triggering during phase-shifted commutation; 200 mJ E_AS eliminates need for external snubbers.

Motor Drive Inverters

Lighting Ballasts & HID Drivers

Use Scenario: Half-bridge upper-leg switch in 750 W brushless DC motor drives for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side switching transistor subjected to 400 V bus and 20 A pulsed drain current during PWM commutation.

Use Value: TO-220FP insulated tab allows direct mounting to shared heatsink without isolation pads; 2.5 kV V_ISO meets IEC 61800-5-1 creepage requirements.

Use Scenario: Resonant half-bridge switch in 400 W electronic ballasts for high-intensity discharge lamps.

IC Role / Device Role / Timing Role: Hard-switched resonant node device operating at 50–100 kHz with high dv/dt stress during zero-voltage transitions.

Use Value: 4.5 V/ns diode recovery dv/dt rating ensures stable body diode commutation; 276 ns trr minimizes reverse recovery loss at 100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF8N80K5	800 V, 8 A, 0.7 Ω typ. R_DS(on), 16 nC Q_g, same TO-220FP package	Higher current rating suits higher-power PFC stages but increases gate drive demand and cost	Select when >5 A continuous current or lower conduction loss is required; verify gate driver can source 16 nC
IPP60R190C7	600 V, 190 mΩ R_DS(on), 23 nC Q_g, TO-220 package (non-insulated)	Lacks 800 V rating and Zener protection; requires external gate clamp and isolation hardware	Only suitable for 400 V DC bus designs; not drop-in for 800 V AC-input topologies requiring reinforced insulation

Compared with STF8N80K5, STF7LN80K5 trades 3 A current headroom for 25% lower gate charge and reduced system-level gate drive complexity; versus IPP60R190C7, it provides essential 800 V rating, integrated Zener, and 2.5 kV isolation-critical for universal-input offline converters.

Availability

STF7LN80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server SMPS, and motor drive inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for STF7LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-power-density offline power conversion-specifically engineered to replace older superjunction MOSFETs in 85–264 VAC input systems where R_DS(on), Q_g, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF7LN80K5 supports 3.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11431 Rev 3. This derating reflects thermal limits of the TO-220FP package with R_thJC = 5 °C/W and maximum T_J = 150 °C. At 25 °C case, it delivers 5 A continuously.

Does the STF7LN80K5 require an external gate resistor for safe operation?

Yes-a gate resistor is required to control dI/dt and suppress oscillation, especially in hard-switching topologies. The datasheet recommends R_G = 4.7 Ω for switching time characterization (Table 6). Typical design values range from 2.2 Ω to 10 Ω depending on drive strength and EMI constraints.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes. ST specifies the STF7LN80K5 in ECOPACK®-compliant TO-220FP packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full environmental compliance data-including Pb-free plating and halogen-free molding compound-is documented in ST's ECOPACK specifications portal.

Can the body diode be used for synchronous rectification in a flyback converter?

No-the intrinsic body diode has 276 ns reverse recovery time (trr) and 2.13 µC Q_rr at 25 °C, making it unsuitable for synchronous rectification. It is designed for clamping and freewheeling only. For SR applications, a dedicated low-Q_rr Schottky or MOSFET with external control is required.

STF7LN80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.15Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF7LN80K5 FAQ

1.How can I place an order for STF7LN80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF7LN80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF7LN80K5 reliable?

The price and inventory of STF7LN80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF7LN80K5 is usually 5 days.

3.What payment methods are accepted for STF7LN80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF7LN80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF7LN80K5?

STF7LN80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF7LN80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF7LN80K5?

For technical support, including STF7LN80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF7LN80K5 requirements.

6.How does Aetrix verify that STF7LN80K5 is sourced from the original manufacturer or authorized distributors?

All STF7LN80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF7LN80K5 meets industry standards.

7.What is the process for return or replacement of STF7LN80K5?

All STF7LN80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF7LN80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF7LN80K5 part is unused and in its original packaging.

Return procedure for STF7LN80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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