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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF7N105K5

Name: STF7N105K5
Brand: STMicroelectronics
SKU: STF7N105K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF7N105K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF7N105K5.pdf

Description:: MOSFET N-CH 1050V 4A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:970

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Product details

Overview

STF7N105K5 from STMicroelectronics is a 1050 V, 4 A N-channel Power MOSFET in TO-220FP package, featuring 1.4 Ω typical R_DS(on), 11 nC total gate charge, and 100% avalanche tested. It employs MDmesh K5 vertical structure for ultra-low FoM and high-voltage switching in offline SMPS, PFC stages, and industrial inverters.

For engineers reviewing the STF7N105K5 datasheet, STF7N105K5 pinout, STF7N105K5 application, or STF7N105K5 equivalent, key selection criteria include 1050 V V_DS, Zener-protected gate, 2.5 kV insulation rating, 50 V/ns dv/dt ruggedness, and 132 mJ single-pulse avalanche energy.

Technical Context

This device uses ST's MDmesh K5 proprietary vertical silicon architecture to achieve 1.4 Ω typ. R_DS(on) at 1050 V - a 30% improvement over prior K3/K4 generations. Its ultra-low Q_g (11 nC) and low C_oss (40 pF) enable high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated Zener-protected gate withstands ±30 V V_GS, while 100% unclamped inductive avalanche testing at I_AR = 1.5 A ensures robustness in flyback and resonant converters. The TO-220FP package provides 2.5 kV RMS insulation between leads and heatsink, enabling direct mounting without isolation pads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1050 V - supports 800 V DC bus designs with 31% safety margin for surge transients
R_DS(on) typ.	1.4 Ω at V_GS = 10 V, I_D = 2 A - enables <1.1 W conduction loss at 4 A continuous current
Q_g	11 nC - reduces gate drive power and allows use of low-power drivers like STGAP2S
E_AS	132 mJ - sustains single-pulse inductive energy without failure in PFC boost diodes or motor freewheeling
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during fast voltage transitions in bridge-leg configurations
V_ISO	2.5 kV RMS - eliminates need for insulating washers when mounted to grounded heatsinks
T_J max	150 °C - supports operation in sealed industrial enclosures with limited airflow

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, 3-pin through-hole outline with integral heatsink interface. Dimensions per DS10291 Rev 3 Table 8: L3 = 28.6–30.6 mm, H = 10.0–10.4 mm, Dia = 3.0–3.2 mm mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; Zener-clamped to ±30 V; requires 10 V min. for full enhancement
2 (D)	Drain	High-voltage output node; connected to insulated tab; rated for 1050 V blocking
3 (S)	Source	Power return path; referenced to driver ground; hosts body diode cathode

Key Features

Feature	Design Value
MDmesh K5 silicon process	Reduces R_DS(on) × Q_g FoM by 45% vs. K3, enabling higher power density in 1U server PSUs
100% avalanche tested	Guarantees minimum 1.5 A repetitive avalanche current and 132 mJ energy handling without derating
Zener-protected gate	Integrated 30 V bidirectional clamp eliminates need for external gate protection Zeners in cost-sensitive designs
Low C_oss (40 pF)	Minimizes turn-off losses in LLC resonant converters operating above 300 kHz
2.5 kV insulation rating	Permits direct heatsink mounting in Class I AC/DC supplies without creepage/clearance compromises

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Half-bridge IGBT gate driver stage in 3 kW HVAC inverter with 600 V DC link.

IC Role / Device Role / Timing Role: High-side switch in bootstrap-fed half-bridge; handles 1050 V transient spikes during shoot-through prevention.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during 400 V/µs bus transients; 132 mJ E_AS absorbs regenerative energy during emergency stop.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch clamped by auxiliary winding; operates at 100 kHz with 50% duty cycle.

Use Value: 11 nC Q_g cuts gate drive loss by 38% vs. legacy 1000 V MOSFETs; 1.4 Ω R_DS(on) maintains <0.8% conduction loss at full load.

Industrial PFC Boost Converter

Medical Imaging HV Supply

Use Scenario: Boost switch in 3.3 kW continuous conduction mode (CCM) PFC front-end for MRI power system.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling inductor current into 800 V bulk capacitor.

Use Value: 1050 V V_DS accommodates 800 V bus + 30% line surge; 2 Ω max. R_DS(on) ensures thermal stability at 4 A RMS under 45 °C ambient.

Use Scenario: Series pass element in 50 kV X-ray generator modulator with regulated DC output.

IC Role / Device Role / Timing Role: Linear-mode controlled switch regulating HV output via pulse-width modulation at 20 kHz.

Use Value: 150 °C T_J max and 5 °C/W R_thJC allow stable linear operation with 25 W dissipation; 2.5 kV V_ISO isolates control circuitry from HV section.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW7N105K5	TO-247 package, same die, 4.5 °C/W R_thJC, no insulation	Requires isolated mounting hardware; better thermal performance but larger footprint	Select when board space permits and heatsink interface is electrically isolated
IPP65R110CFD7	650 V SiC MOSFET, 110 mΩ, 35 nC Q_g, no avalanche rating	Enables >300 kHz operation but requires gate driver redesign and lacks 100% avalanche test guarantee	Select only for new designs targeting >98% efficiency where 650 V bus suffices

Compared with STW7N105K5, STF7N105K5 trades 0.5 °C/W higher junction-to-case resistance for integrated 2.5 kV insulation and smaller TO-220FP footprint; versus IPP65R110CFD7, it offers proven 1050 V ruggedness and lower gate drive complexity at the cost of higher R_DS(on) and switching frequency ceiling.

Availability

STF7N105K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, medical HV supplies, and PFC boost converters requiring stable component supply across multi-year production cycles.

Supply support for STF7N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for >800 V offline power conversion systems demanding high reliability, low conduction loss, and robust avalanche immunity.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF7N105K5 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10291 Rev 3. This derating from 4 A at 25 °C reflects thermal limits of the TO-220FP package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic source-drain body diode with 1.6 V forward voltage at 4 A and 370 ns reverse recovery time at T_J = 25 °C. At 150 °C, t_rr increases to 600 ns and Q_rr rises to 4.4 µC - values critical for snubber design in hard-switched PFC stages.

Can STF7N105K5 be used in linear (non-switching) regulator applications?

Yes - its 150 °C maximum junction temperature, 5 °C/W R_thJC, and 25 W P_TOT at T_C = 25 °C support linear-mode operation. However, safe operating area curves (Figure 1) must be consulted to limit V_DS × I_D product and avoid second breakdown at high voltage/low current points.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes - ST certifies the TO-220FP package as ECOPACK2 compliant, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Lead finish is matte tin, and halogen-free molding compound is used per ST's environmental policy published at www.st.com/ecopack.

STF7N105K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1050 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF7N105K5 FAQ

1.How can I place an order for STF7N105K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF7N105K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF7N105K5 reliable?

The price and inventory of STF7N105K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF7N105K5 is usually 5 days.

3.What payment methods are accepted for STF7N105K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF7N105K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF7N105K5?

STF7N105K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF7N105K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF7N105K5?

For technical support, including STF7N105K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF7N105K5 requirements.

6.How does Aetrix verify that STF7N105K5 is sourced from the original manufacturer or authorized distributors?

All STF7N105K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF7N105K5 meets industry standards.

7.What is the process for return or replacement of STF7N105K5?

All STF7N105K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF7N105K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF7N105K5 part is unused and in its original packaging.

Return procedure for STF7N105K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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