Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF7N52K3

Name: STF7N52K3
Brand: STMicroelectronics
SKU: STF7N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STF7N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF7N52K3.pdf

Description:: MOSFET N-CH 525V 6A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:977

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STD7N52K3 from STMicroelectronics is an N-channel 525 V, 730 mΩ typ. (850 mΩ max.), 6 A MDmesh K3 Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 110 mJ single-pulse avalanche energy, 12 V/ns dv/dt capability, and improved diode reverse recovery (trr = 220 ns at TJ = 25 °C).

For engineers reviewing the STD7N52K3 datasheet, STD7N52K3 pinout, STD7N52K3 application, or STD7N52K3 equivalent, key selection criteria include RDS(on) stability over temperature, Coss eq. (53 pF), EAS rating, gate charge (Qg = 33 nC), and Zener-protected gate robustness against ESD (2.5 kV HBM).

Technical Context

This MDmesh K3 device employs a vertically optimized silicon structure to reduce specific on-resistance while maintaining high breakdown voltage. Its low Crss (13 pF) and high dv/dt immunity enable stable operation in hard-switched topologies with fast voltage transients.

The integrated body diode features reduced Qrr (1.8 µC) and IRRM (16 A) under 100 A/µs di/dt, supporting efficient inductive load switching. Thermal resistance RthJC is 1.39 °C/W, enabling 90 W power dissipation at TC = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	525 V - Supports 400 V AC mains-derived bus voltages with ≥30% margin for surge and ringing.
R_DS(on) max	850 mΩ at V_GS = 10 V, I_D = 3 A - Enables <1.5 W conduction loss at 6 A continuous drain current.
Q_g	33 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
E_AS	110 mJ - Withstands unclamped inductive switching events without failure at V_DD = 50 V, I_AR = 3 A.
C_oss eq.	53 pF - Low output capacitance minimizes turn-off energy loss and improves light-load efficiency in flyback/PFC.
t_rr	220 ns at T_J = 25 °C - Reduces diode recovery-related switching losses and EMI in bridge-leg configurations.
I_D cont	6 A at T_C = 25 °C - Requires thermal design to maintain case temperature ≤100 °C for 3.8 A derated operation.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount, single-ended lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Power Drain / Heat Sink Interface	Electrically connected to drain; must be soldered to large copper pour for thermal management and low-inductance return path.
1 (Gate)	Control Input	High-impedance MOS gate requiring <3.5 Ω intrinsic resistance; sensitive to ESD (2.5 kV HBM); Zener-protected.
3 (Source)	Power Return / Reference Node	Common reference for gate drive and load current; connects to PCB ground plane; carries full 6 A continuous current.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS = 110 mJ performance across production lot-no screening waivers.
Extremely high dv/dt capability	12 V/ns rated slope ensures immunity to false turn-on during fast voltage transients in half-bridge or LLC resonant circuits.
Very low intrinsic capacitance	Ciss = 870 pF, Crss = 13 pF - Reduces Miller effect, enabling faster switching and lower gate drive losses.
Improved diode reverse recovery	Qrr = 1.8 µC, trr = 220 ns - Low stored charge minimizes shoot-through risk and reduces snubber stress in synchronous rectification.
Zener-protected gate	Integrated gate-source Zener clamps V_GS to ±30 V - Eliminates need for external gate protection in most industrial designs.

Applications

AC-DC Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switch in 100–300 W offline flyback and quasi-resonant converters.

IC Role / Device Role: High-voltage power switch handling 400 V DC bus with 525 V V_DS rating.

Use Value: Low R_DS(on) (730 mΩ typ.) and 110 mJ EAS ensure reliable start-up and overload protection without external snubbers.

Use Scenario: Inverter leg switch in 3-phase BLDC drives up to 1 kW.

IC Role / Device Role: N-channel high-side/low-side switching element with fast diode recovery.

Use Value: trr = 220 ns and Qrr = 1.8 µC reduce cross-conduction losses and EMI during PWM commutation.

Power Factor Correction

Uninterruptible Power Systems

Use Scenario: Boost switch in active PFC front-end for telecom rectifiers and server PSUs.

IC Role / Device Role: High-efficiency, high-reliability switching transistor operating at 65–100 kHz.

Use Value: Coss eq. = 53 pF and low Qg = 33 nC minimize switching loss and improve light-load PF correction accuracy.

Use Scenario: DC-DC isolation stage switch in UPS battery backup inverters.

IC Role / Device Role: Robust main switch subjected to frequent bus transients and thermal cycling.

Use Value: 100% avalanche testing and RthJC = 1.39 °C/W support long-term reliability under partial-load derating and thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7N52K3	Same die, TO-220 package; higher RthJA (62 °C/W vs. 50 °C/W), no exposed tab for direct heatsink mounting.	Better suited for through-hole prototyping or low-volume chassis-mounted heatsinks.	Select when mechanical mounting constraints favor TO-220 or when manual soldering is required.
IPP60R099C7	650 V, 99 mΩ typ., 30 A - Lower R_DS(on) but higher Qg (63 nC); CoolMOS C7 technology, not MDmesh K3.	Targets higher-power (>500 W) resonant topologies where conduction loss dominates over switching loss.	Choose only if system-level efficiency gain from lower R_DS(on) outweighs increased gate drive complexity and cost.

Compared with STP7N52K3, STD7N52K3 offers superior thermal performance in SMT layouts and smaller footprint; versus IPP60R099C7, it trades higher R_DS(on) for lower Qg, better dv/dt immunity, and proven avalanche ruggedness in cost-sensitive 100–300 W applications.

Availability

STD7N52K3 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and power factor correction circuits requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STD7N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STD7N52K3 belongs to the MDmesh K3 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline power conversion systems up to 300 W.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD7N52K3 supports 3.8 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS5889 Rev 7. This derating reflects thermal limits imposed by RthJC = 1.39 °C/W and maximum junction temperature of 150 °C. Operation above this requires forced cooling or pulse-width limitation.

Does the body diode support synchronous rectification in LLC resonant converters?

Yes-the body diode exhibits trr = 220 ns and Qrr = 1.8 µC at TJ = 25 °C, with IRRM = 16 A, making it suitable for moderate-frequency (<300 kHz) synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI. At TJ = 150 °C, trr increases to 250 ns and Qrr to 2.2 µC.

Is external gate protection required given the Zener-protected gate?

No external gate Zener is required-the device integrates internal gate-source Zener clamping rated for ±30 V, validated per JEDEC JESD22-A114 (2.5 kV HBM ESD). However, layout best practices (short gate traces, local 100 nF decoupling) remain essential to prevent oscillation and overshoot.

Can STD7N52K3 replace STD7N52K2 in existing designs?

Yes-STD7N52K3 is a direct upgrade from STD7N52K2, offering identical pinout, package, and voltage rating, but with improved RDS(on) (730 mΩ typ. vs. 850 mΩ typ.), lower Qg (33 nC vs. 38 nC), and enhanced diode recovery (trr reduced from 280 ns to 220 ns), yielding measurable efficiency gains in SMPS designs.

STF7N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF7N52K3 FAQ

1.How can I place an order for STF7N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF7N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF7N52K3 reliable?

The price and inventory of STF7N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF7N52K3 is usually 5 days.

3.What payment methods are accepted for STF7N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF7N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF7N52K3?

STF7N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF7N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF7N52K3?

For technical support, including STF7N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF7N52K3 requirements.

6.How does Aetrix verify that STF7N52K3 is sourced from the original manufacturer or authorized distributors?

All STF7N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF7N52K3 meets industry standards.

7.What is the process for return or replacement of STF7N52K3?

All STF7N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STF7N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF7N52K3 part is unused and in its original packaging.

Return procedure for STF7N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…