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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF7N65M2

Name: STF7N65M2
Brand: STMicroelectronics
SKU: STF7N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF7N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF7N65M2.pdf

Description:: MOSFET N-CH 650V 5A TO220FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STF7N65M2 from STMicroelectronics is an N-channel 650 V, 0.98 Ω typ. R_DS(on), 5 A Power MOSFET using MDmesh™ M2 technology in a TO-220FP package. It delivers low gate charge (9 nC), optimized C_oss profile (14.5 pF typ.), and 100% avalanche tested ruggedness for high-efficiency switching converters in industrial SMPS.

For engineers reviewing the STF7N65M2 datasheet, STF7N65M2 pinout, STF7N65M2 application, or STF7N65M2 equivalent, key selection criteria include its 650 V V_DS, 1.15 Ω max R_DS(on) at 25 °C, 20 W P_TOT, 6.25 °C/W R_thj-case, and Zener-protected gate structure - all critical for reliable high-voltage flyback and PFC stage design.

Technical Context

The STF7N65M2 employs ST's MDmesh™ M2 vertical strip layout to simultaneously minimize conduction loss and switching energy. Its 108 pF C_oss,eq (0–520 V) and 4.3 nC Q_gd enable fast, low-loss hard-switching with controlled dv/dt (50 V/ns MOSFET ruggedness).

It integrates a Zener-protected gate for ESD robustness and features a source-drain diode with 1.6 V V_SD at 5 A and 275 ns t_rr at 25 °C, supporting synchronous rectification and inductive load commutation in isolated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports primary-side switching in universal-input offline SMPS up to 400 V DC bus
R_DS(on) max	1.15 Ω at V_GS = 10 V, T_C = 25 °C - enables <5 W conduction loss at 5 A continuous drain current
I_D cont	5 A at T_C = 25 °C - rated for sustained operation in thermally managed TO-220FP heatsink mounts
Q_g	9 nC - reduces gate drive power and enables use with low-current drivers in high-frequency designs
C_oss	14.5 pF typ. at V_DS = 100 V - contributes to low capacitive turn-off loss and stable snubber design
E_AS	103 mJ single-pulse avalanche energy - ensures robustness against unclamped inductive switching transients
t_r/t_f	20 ns rise / 20 ns fall time - supports >500 kHz switching in resonant and quasi-resonant converters

Pinout & Package

TO-220FP package: insulated flange, 3-pin through-hole, vertical mounting with heat transfer via flange (pin 2). Flange electrically connected to drain (pin 2); no external isolation required between heatsink and circuit ground when mounted with insulating washer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for drain current	Low-inductance connection point for source loop routing; referenced to system ground in common-source configuration
2 (Drain)	Main high-voltage power terminal	Internally bonded to flange; must be electrically isolated from heatsink unless system design permits drain-referenced thermal interface
3 (Gate)	Control input for channel modulation	Zener-protected MOS gate; requires ≤±25 V drive; sensitive to ringing - needs local RC snubber or gate resistor ≥4.7 Ω

Key Features

Feature	Design Value
MDmesh™ M2 process	Enables 0.98 Ω R_DS(on) at 650 V - 30% lower on-resistance than prior-generation 650 V superjunction MOSFETs
Extremely low Q_g	9 nC total gate charge - cuts gate driver losses by ~40% vs comparable 600 V devices with >14 nC Q_g
Optimized C_oss profile	14.5 pF C_oss + 108 pF C_oss,eq - minimizes turn-off energy and improves light-load efficiency in LLC resonant converters
100% avalanche tested	Guarantees 1 A I_AR and 103 mJ E_AS - eliminates need for external clamping in PFC boost and flyback snubberless designs

Applications

Industrial SMPS

Server PSU

Use Scenario: 1 kW open-frame AC/DC front-end with active PFC and LLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: Primary-side switch in boost PFC and half-bridge LLC power stage.

Use Value: Low Q_g and C_oss,eq reduce switching loss at 100–300 kHz, enabling >96% full-load efficiency without complex gate drive compensation.

Use Scenario: Hot-swap capable 48 V intermediate bus converter in modular server rack power distribution.

IC Role / Device Role / Timing Role: Isolated forward converter primary switch with synchronous rectification on secondary side.

Use Value: 6.25 °C/W R_thj-case allows 5 A continuous operation at 85 °C case temperature with standard finned heatsink - eliminating forced air cooling.

LED Driver

EV Charger OBC

Use Scenario: High-bay LED streetlight driver with universal AC input and constant-current output.

IC Role / Device Role / Timing Role: Flyback controller primary switch operating in quasi-resonant mode.

Use Value: Zener-protected gate withstands 2 kV ESD events during field service; 275 ns t_rr prevents cross-conduction in QR valley switching.

Use Scenario: On-board charger (OBC) bidirectional AC/DC and DC/DC stage for 11 kW Level 2 EV charging.

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved totem-pole PFC front-end.

Use Value: 50 V/ns dv/dt ruggedness ensures stable operation under grid voltage surges and line transients without false turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF8N65M2	Higher I_D (6 A), same V_DS/R_DS(on), 10.5 nC Q_g	Supports higher peak current in intermittent duty-cycle PFC stages	Select when >5 A pulsed current capability is required without increasing board area
IPP65R099C7	Infineon CoolMOS™ C7; 650 V, 0.099 Ω R_DS(on), 29 nC Q_g, TO-220FP	Lower R_DS(on) but higher Q_g; better conduction, worse switching loss above 150 kHz	Prefer for <100 kHz high-power applications where thermal margin is constrained but gate drive strength is available

Compared with STF8N65M2 and IPP65R099C7, the STF7N65M2 offers the best balance of gate drive simplicity (lowest Q_g) and avalanche ruggedness for cost-sensitive 500 W–1 kW industrial SMPS, while avoiding the thermal trade-offs of ultra-low-R_DS(on) alternatives.

Availability

STF7N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU, LED driver, and EV charger OBC applications requiring stable component supply and long-term production continuity.

Supply support for STF7N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh™ M2 product line targets high-efficiency, high-voltage power conversion - specifically engineered for reduced switching and conduction losses in 600–650 V SMPS, PFC, and lighting applications.

FAQ

What is the maximum safe operating junction temperature for STF7N65M2?

The absolute maximum operating junction temperature is 150 °C. Continuous operation above this limit risks permanent degradation of the silicon die and bond wires. Thermal design must ensure T_j remains ≤150 °C under worst-case ambient and load conditions, using the specified 6.25 °C/W R_thj-case and verified heatsink performance.

Does STF7N65M2 require external gate protection?

No external gate Zener is required - the device integrates internal gate-to-source Zener protection rated for ±25 V. However, a series gate resistor (≥4.7 Ω) and optional RC snubber remain necessary to dampen ringing caused by PCB parasitics and prevent spurious turn-on during high dv/dt transitions.

Can STF7N65M2 replace STP7N65M2 in existing designs?

Yes, STF7N65M2 is a direct drop-in replacement for STP7N65M2 in TO-220FP footprint designs. Both share identical pinout, electrical specs, and thermal characteristics. The "F" suffix denotes the full-pack (insulated flange) variant, whereas "P" indicates non-insulated TO-220 - confirming mechanical and electrical compatibility when heatsink isolation is maintained.

What is the typical reverse recovery behavior of the body diode?

The integrated source-drain diode exhibits t_rr = 275 ns and Q_rr = 1.62 µC at T_j = 25 °C, with I_RRM = 11.8 A. At 150 °C, t_rr increases to 430 ns and Q_rr to 2.54 µC. This soft, moderate Q_rr profile supports reliable operation in flyback and LLC topologies without requiring external diode substitution.

STF7N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.15Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF7N65M2 FAQ

1.How can I place an order for STF7N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF7N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF7N65M2 reliable?

The price and inventory of STF7N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF7N65M2 is usually 5 days.

3.What payment methods are accepted for STF7N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF7N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF7N65M2?

STF7N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF7N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF7N65M2?

For technical support, including STF7N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF7N65M2 requirements.

6.How does Aetrix verify that STF7N65M2 is sourced from the original manufacturer or authorized distributors?

All STF7N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF7N65M2 meets industry standards.

7.What is the process for return or replacement of STF7N65M2?

All STF7N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF7N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF7N65M2 part is unused and in its original packaging.

Return procedure for STF7N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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