STMicroelectronics STF7N80K5

Overview

STF7N80K5 from STMicroelectronics is an N-channel 800 V, 0.95 Ω typ. (1.2 Ω max.), 6 A MDmesh K5 Power MOSFET in TO-220FP package, featuring ultra-low gate charge (13.4 nC), Zener-protected gate, and 100% avalanche tested for ruggedness. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial AC-DC converters requiring high power density and efficiency.

For engineers reviewing the STF7N80K5 datasheet, STF7N80K5 pinout, STF7N80K5 application, or STF7N80K5 equivalent, key selection criteria include its 800 V V_DS, 1.2 Ω R_DS(on) max., 13.4 nC Q_g, 2.5 kV insulation withstand voltage, and avalanche energy rating of 88 mJ - all critical for high-reliability HV switching designs.

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to simultaneously reduce R_DS(on) and gate charge while maintaining 800 V breakdown voltage. Its Zener-protected gate (±30 V V_GS) and 100% unclamped inductive avalanche testing (E_AS = 88 mJ) enable robust operation under transient overvoltage and hard-switching conditions.

The TO-220FP package integrates insulated leads with 2.5 kV RMS isolation between drain and heat sink, supporting direct mounting without insulating pads. Dynamic parameters - including C_iss = 360 pF, C_oss = 30 pF, and dv/dt ruggedness up to 50 V/ns - are optimized for fast, low-loss switching in 50–100 kHz SMPS topologies.

Key Specifications

Pinout & Package

TO-220FP (Type B) package with insulated leads and integral heatsink tab. Mounting hole diameter: 3.0–3.2 mm. Lead pitch: 2.54 mm. Total height: 10.0–10.4 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STF8N80K5 and IPP65R190CFD7, the STF7N80K5 delivers optimal balance of 800 V rating, 1.2 Ω R_DS(on), and 13.4 nC Q_g for universal-input PFC and mid-power SMPS where voltage headroom and gate drive simplicity are critical.

Availability

STF7N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STF7N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-voltage power conversion - specifically engineered for PFC, server PSUs, and industrial SMPS where low R_DS(on) × Q_g FoM directly improves system-level efficiency and thermal performance.

FAQ

Is STF7N80K5 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low C_oss (30 pF typ.) and low Q_gd/Q_gs ratio (7.5 nC / 3.7 nC ≈ 2.0) support efficient ZVS in LLC resonant converters. The 50 V/ns dv/dt ruggedness ensures reliable operation during resonant transitions without false triggering.

What is the maximum recommended gate resistor for driving STF7N80K5 at 100 kHz?

A 4.7 Ω gate resistor is validated per datasheet test conditions (V_DD = 400 V, I_D = 3 A). At 100 kHz, this value balances switching speed (t_d(off) = 23.7 ns) and gate oscillation damping; values below 3.3 Ω require careful PCB layout to avoid ringing.

Does STF7N80K5 have an integrated body diode, and what is its reverse recovery performance?

Yes - it features a fast intrinsic body diode with t_rr = 315 ns (T_J = 25 °C) and Q_rr = 2.8 µC. This enables use in synchronous rectification and freewheeling roles, though external SiC diodes are preferred for <100 ns recovery in high-frequency designs.

Can STF7N80K5 be paralleled for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables stable current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 10 Ω gate resistors to suppress oscillation.