STMicroelectronics STF7N95K3

Overview

STF7N95K3 from STMicroelectronics is an N-channel 950 V, 1.1 Ω typ. (1.35 Ω max.), 7.2 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 220 mJ single-pulse avalanche energy, 6 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STF7N95K3 datasheet, STF7N95K3 pinout, STF7N95K3 application, or STF7N95K3 equivalent, key selection criteria include its 950 V V_BRDSS rating, low R_DS(on) at high voltage, fast 450 ns diode t_rr, and TO-220FP thermal resistance of 0.83 °C/W junction-to-case.

Technical Context

This device employs ST's MDmesh K3 vertical superjunction architecture optimized for high-voltage hard-switching applications. Its 1031 pF C_iss, 79 pF C_oss, and 0.9 pF Cr_ss enable efficient high-frequency operation while maintaining robustness against voltage transients.

The integrated Zener-protected gate withstands ±30 V, and its source-drain diode exhibits 1.6 V forward drop at 7.2 A with 6 µC Q_rr at 25 °C-critical for reducing switching losses in bridge configurations and improving EMI performance.

Key Specifications

Pinout & Package

STF7N95K3 uses the TO-220FP type B package: insulated plastic case with metal tab (drain) on backside, 3-pin vertical lead configuration, and 0.83 °C/W R_thJC. The package provides creepage/clearance compliance for reinforced insulation in >300 V AC systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP7N95K3 and STW7N95K3, STF7N95K3 uniquely combines reinforced insulation, compact TO-220FP form factor, and 0.83 °C/W thermal resistance-making it optimal for space-constrained, safety-certified industrial power supplies where galvanic isolation is mandatory.

Availability

STF7N95K3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom PSUs, EV onboard chargers, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for STF7N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STF7N95K3 belongs to the MDmesh K3 family-engineered specifically for high-efficiency, high-reliability 600–1000 V switching applications where avalanche ruggedness, low capacitance, and fast diode recovery are critical.

FAQ

What is the maximum gate-source voltage rating for STF7N95K3?

The absolute maximum V_GS is ±30 V, with integrated Zener protection clamping gate-to-source voltage to approximately ±20 V under transient overvoltage. This eliminates the need for external gate protection in most industrial gate-driver circuits using standard 12–15 V supplies.

Can STF7N95K3 replace STP7N95K3 directly in existing PCB layouts?

No-STF7N95K3 uses TO-220FP (insulated tab), while STP7N95K3 uses TO-220 (non-insulated tab). Pinout is identical (G-D-S), but mechanical mounting differs: STF7N95K3 requires no insulating washer, whereas STP7N95K3 mandates electrical isolation between tab and heatsink. Layout revision is required for safe substitution.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C?

At TJ = 150 °C, Q_rr increases to 8 µC (vs. 6 µC at 25 °C), measured under ISD = 7.2 A, di/dt = 100 A/µs, and VDD = 60 V. This elevated Q_rr must be accounted for in snubber sizing and EMI filter design for high-temperature operation.

Is STF7N95K3 suitable for use in zero-voltage switching (ZVS) topologies?

Yes-its low Cr_ss (0.9 pF) and C_oss (79 pF), combined with 34 nC Q_g, enable predictable resonant turn-on in phase-shifted full-bridge and LLC converters. The 6 V/ns dv/dt rating ensures reliable ZVS initiation even with high stray inductance in high-power layouts.