STMicroelectronics STF80N1K1K6

Overview

STF80N1K1K6 from STMicroelectronics is a high-voltage N-channel MDmesh K6 Power MOSFET in TO-220FP package, rated for 800 V V_DS, 1.1 Ω R_DS(on) max at 10 V V_GS, and 5 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (5.7 nC), 100% avalanche tested capability (E_AS = 60 mJ), and Zener-protected gate, targeting high-efficiency flyback converters in notebook adapters and LED lighting.

For engineers reviewing the STF80N1K1K6 datasheet, STF80N1K1K6 pinout, STF80N1K1K6 application, or STF80N1K1K6 equivalent, key selection criteria include its 800 V breakdown voltage, 1.1 Ω on-resistance, 5.7 nC total gate charge, 6 °C/W junction-to-case thermal resistance, and TO-220FP insulated package with 2.5 kV RMS isolation rating.

Technical Context

This MOSFET implements ST's MDmesh K6 super-junction architecture, delivering best-in-class R_DS(on) × area and figure-of-merit for high-power-density offline SMPS. Its optimized cell layout reduces output capacitance (C_oss = 4.5 pF) and energy-related capacitance (C_o(er) = 7 pF), enabling fast switching with low E_oss (1.5 µJ at 600 V).

The device integrates a robust body diode with 217 ns reverse recovery time (T_J = 25 °C) and 1.7 µC Q_rr, supporting hard-switched flyback operation up to 100 kHz. Its 120 V/ns dv/dt ruggedness and 100 A/µs di/dt capability ensure reliable operation under inductive load transients without external snubbing.

Key Specifications

Pinout & Package

TO-220FP (Type B) package with insulated tab: plastic body, vertical lead frame, integral heat sink interface, and creepage-enhanced isolation. Mounting hole diameter 3.0–3.2 mm; outline conforms to ECOPACK2 environmental compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STF80N1K1K6, STF80N1K2 trades 9% higher conduction loss for 9% lower gate drive loss, while IPP80N1K2P7 lacks reinforced isolation and adds mechanical complexity-making STF80N1K1K6 optimal for certified, compact, thermally constrained adapters and LED drivers.

Availability

STF80N1K1K6 is available at Aetrix Electronics and suitable for notebook adapters, LED lighting drivers, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and certified isolation performance.

Supply support for STF80N1K1K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K6 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS topologies including flyback, LLC, and resonant converters.

FAQ

What is the maximum safe operating temperature for STF80N1K1K6?

The junction temperature must not exceed 150 °C under continuous operation. With R_thJC = 6 °C/W and P_TOT = 21 W at T_C = 25 °C, the device supports 150 °C T_J at T_C = 85 °C when derated to 11.7 W. Thermal design must account for ambient, heatsink resistance, and duty cycle.

Does STF80N1K1K6 require a gate resistor for stability?

Yes-a 10–22 Ω gate resistor is recommended to dampen oscillation caused by L_g–C_iss resonance and limit peak gate current. Figure 15 in DS14610 shows E_on/E_off trade-offs versus R_G; 10 Ω balances switching loss and ringing suppression for typical 65–100 kHz flyback designs.

Can STF80N1K1K6 replace STF80N1K1 in existing designs?

Yes-STF80N1K1K6 is a direct replacement for STF80N1K1 (same pinout, package, and voltage rating), offering improved R_DS(on) (1.1 Ω vs. 1.2 Ω), lower Q_g (5.7 nC vs. 6.5 nC), and enhanced avalanche ruggedness (60 mJ vs. 45 mJ), enabling efficiency gains without layout changes.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 217 ns t_rr and 1.7 µC Q_rr, making it unsuitable for synchronous rectification. It is optimized for flyback freewheeling, not high-frequency bidirectional conduction. External Schottky or MOSFET synchronous rectifiers are required for SR topologies.