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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF8N80K5

Name: STF8N80K5
Brand: STMicroelectronics
SKU: STF8N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF8N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF8N80K5.pdf

Description:: MOSFET N-CH 800V 6A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:974

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Product details

Overview

STF8N80K5 from STMicroelectronics is an N-channel 800 V, 6 A ultra-high-voltage Power MOSFET in TO-220FP package, featuring 950 mΩ max R_DS(on), 16.5 nC total gate charge, and 100% avalanche tested operation-designed for high-efficiency flyback and resonant SMPS in industrial power supplies.

For engineers reviewing the STF8N80K5 datasheet, STF8N80K5 pinout, STF8N80K5 application, or STF8N80K5 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 2 kV insulation withstand voltage, Zener-protected gate, and MDmesh K5 technology enabling superior power density in space-constrained 400–800 V DC-link switching stages.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical structure to achieve ultra-low FoM (R_DS(on) × Q_g = 15.7 Ω·nC), enabling high-frequency operation up to 100 kHz with minimal conduction and switching losses. Its 114 mJ single-pulse avalanche energy and 2 A repetitive avalanche current support robust unclamped inductive load handling.

The integrated body diode exhibits 300 ns reverse recovery time at 25 °C and 415 ns at 150 °C, with 3.8 µC Q_rr, making it suitable for hard-switched topologies where diode recovery stress must be minimized without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input offline SMPS up to 800 V DC bus
R_DS(on) max	950 mΩ at V_GS = 10 V, I_D = 3 A - enables low conduction loss at 6 A continuous drain current
Q_g	16.5 nC - reduces gate drive power and allows use of smaller, lower-cost drivers
dv/dt ruggedness	50 V/ns - ensures reliable operation under fast voltage transients in high-noise industrial environments
E_AS	114 mJ at T_J = 25 °C - provides margin against single-event inductive energy spikes without external clamping
V_ISO	2 kV RMS - permits direct mounting on insulated heat sinks in Class I safety designs
T_J range	−55 to 150 °C - supports operation in extended-temperature industrial and telecom power systems

Pinout & Package

TO-220FP (Type B) package: full-molded, isolated tab, vertical mounting with internal thermal isolation between drain and case. Tab is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤ ±30 V bias; low 6 Ω intrinsic gate resistance minimizes ringing
2 (D)	Drain	Main high-voltage power terminal; internally bonded to isolated metal tab for heatsink mounting
3 (S)	Source	Power return path and reference for gate drive; tied to PCB ground plane in most flyback configurations

Key Features

Feature	Design Value
Ultra-low gate charge	16.5 nC enables <100 kHz switching with <1 W gate driver loss at 6 A load
Zener-protected gate	Integrated 30 V gate-source Zener clamp prevents ESD-induced gate oxide failure during handling and layout
100% avalanche tested	Every unit validated for 2 A repetitive avalanche current and 114 mJ single-pulse energy per JEDEC JESD22-A109
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM by 40% vs prior K3 generation, improving efficiency in 65–100 kHz SMPS

Applications

Industrial Flyback SMPS

AC-DC Adapter Primary Switch

Use Scenario: 100 W universal-input (85–265 V_AC) flyback converter for PLC power modules.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with DCM/CCM boundary control.

Use Value: 950 mΩ R_DS(on) and 16.5 nC Q_g reduce total losses to <1.2 W at full load, enabling compact heatsink-free design.

Use Scenario: 36 W open-frame AC-DC adapter for IoT gateway power supply.

IC Role / Device Role / Timing Role: Main switching FET in quasi-resonant flyback with valley-switching controller.

Use Value: 50 V/ns dv/dt ruggedness eliminates false triggering during high-slew transient events on 400 V DC bus.

LED Driver Secondary Side

Telecom DC-DC Front-End

Use Scenario: 150 W constant-current LED driver with active PFC + LLC stage.

IC Role / Device Role / Timing Role: PFC boost switch in continuous conduction mode at 70 kHz.

Use Value: 2 kV insulation rating allows direct heatsink mounting without additional isolation pads, reducing thermal resistance by 1.2 °C/W.

Use Scenario: −48 V telecom rectifier front-end with hold-up capacitor charging circuit.

IC Role / Device Role / Timing Role: High-side switch controlling bulk capacitor pre-charge sequence.

Use Value: 100% avalanche testing ensures survival during hot-swap insertion surges up to 800 V peak.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF10N80K5	10 A I_D, 750 mΩ R_DS(on) max, same 800 V rating and TO-220FP package	Higher current capability suits >120 W SMPS but increases gate charge to 20.5 nC	Select when higher continuous current headroom is required and gate drive strength allows extra 4 nC charge
IPP80N08S2L-07	80 A I_D, 7.5 mΩ R_DS(on), 75 V V_DS, TO-220 package (non-isolated tab)	Lower voltage rating and non-isolated tab require redesign of heatsink isolation and snubber network	Only viable for low-voltage (<100 V) DC-DC stages; not a drop-in replacement for 800 V applications

Compared with STF10N80K5 and IPP80N08S2L-07, STF8N80K5 delivers optimal balance of 800 V rating, 6 A current, and 16.5 nC gate charge for cost-sensitive 60–100 W industrial SMPS where thermal and layout constraints favor isolated-tab packaging and moderate conduction loss.

Availability

STF8N80K5 is available at Aetrix Electronics and suitable for industrial flyback SMPS, AC-DC adapters, LED driver PFC stages, and telecom rectifier front-ends requiring stable component supply and long-term lifecycle support.

Supply support for STF8N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STF8N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in 400–800 V applications.

FAQ

What is the maximum safe operating temperature for STF8N80K5?

The STF8N80K5 has a specified junction temperature range of −55 °C to 150 °C. Its R_thJC is 5 °C/W, so with a 25 W power dissipation limit at T_C = 25 °C, the junction will reach 150 °C only if case temperature exceeds 100 °C. Derating is required above 100 °C case temperature per Figure 1 of DS9564.

Does STF8N80K5 have an integrated body diode, and what are its recovery characteristics?

Yes, STF8N80K5 includes a monolithic source-drain body diode rated for 6 A continuous and 24 A pulsed current. At 25 °C, its reverse recovery time is 300 ns with 3 µC Q_rr; at 150 °C, trr increases to 415 ns and Q_rr to 3.8 µC, as measured under ISD = 6 A, di/dt = 100 A/µs, and VDD = 60 V conditions.

Can STF8N80K5 be used in zero-voltage switching (ZVS) topologies?

Yes-its low output capacitance (C_oss = 30 pF typ., Co(er) = 24 pF) and fast switching times (td(off) = 32 ns, tf = 20 ns) support ZVS operation in LLC resonant converters up to 300 kHz. However, ZVS initiation requires careful tuning of resonant tank parameters to ensure V_DS falls to near-zero before turn-on.

Is the TO-220FP package electrically isolated, and what is its insulation rating?

Yes-the TO-220FP (Type B) package features full electrical isolation between the drain-connected metal tab and leads. It is rated for 2 kV RMS insulation withstand voltage (1 s, T_C = 25 °C) from all three leads to external heat sink, complying with IEC 60747-17 for reinforced insulation in Class I equipment.

STF8N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 16.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF8N80K5 FAQ

1.How can I place an order for STF8N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF8N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF8N80K5 reliable?

The price and inventory of STF8N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF8N80K5 is usually 5 days.

3.What payment methods are accepted for STF8N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF8N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF8N80K5?

STF8N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF8N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF8N80K5?

For technical support, including STF8N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF8N80K5 requirements.

6.How does Aetrix verify that STF8N80K5 is sourced from the original manufacturer or authorized distributors?

All STF8N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF8N80K5 meets industry standards.

7.What is the process for return or replacement of STF8N80K5?

All STF8N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STF8N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF8N80K5 part is unused and in its original packaging.

Return procedure for STF8N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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