STMicroelectronics STF8N90K5

Overview

STF8N90K5 from STMicroelectronics is a 900 V, 8 A N-channel power MOSFET in TO-220FP package, featuring 600 mΩ typ. R_DS(on), 11 nC total gate charge, and 100% avalanche tested for ruggedness. It employs MDmesh K5 vertical structure to deliver ultra-low FoM for high-voltage switching in offline SMPS, PFC stages, and industrial inverters.

For engineers reviewing the STF8N90K5 datasheet, STF8N90K5 pinout, STF8N90K5 application, or STF8N90K5 equivalent, key selection criteria include its 2.5 kV insulation withstand voltage, 4.2 °C/W junction-to-case thermal resistance, 50 V/ns MOSFET dv/dt ruggedness, and integrated Zener-protected gate.

Technical Context

This MOSFET uses ST's MDmesh K5 proprietary vertical silicon architecture to simultaneously reduce R_DS(on) and gate charge-achieving 600 mΩ typ. at 10 V_GS and 11 nC Q_g. Its 900 V V_DS rating and 2.7 A repetitive avalanche current support operation in unclamped inductive switching.

The device integrates a robust body diode with 371 ns trr (T_J = 25 °C) and 4.27 µC Q_rr, and features ±30 V gate-source voltage tolerance, 100% production-tested single-pulse avalanche energy of 250 mJ, and 4.5 V/ns diode recovery dv/dt capability.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated tab, vertical mounting, single-row 3-pin outline with integral heatsink interface. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW8N90K5 and IPP60R099C7, STF8N90K5 uniquely balances 900 V capability, TO-220FP mechanical compactness, Zener gate protection, and 2.5 kV isolation-making it optimal for space-constrained, safety-critical 800 V-class industrial and telecom power supplies.

Availability

STF8N90K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV on-board charger PFC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STF8N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF8N90K5 belongs to the MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including server PSUs, industrial inverters, and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF8N90K5 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11941 Rev 2. This derating reflects thermal limits of the TO-220FP package with 4.2 °C/W R_thJC, ensuring safe operation without exceeding 150 °C junction temperature under sustained load.

Does STF8N90K5 include an integrated body diode, and what are its key recovery parameters?

Yes, it features an intrinsic source-drain diode rated for 8 A continuous and 32 A pulsed current. Key recovery specs include 371 ns reverse recovery time (T_J = 25 °C), 4.27 µC Q_rr, and 23 A peak reverse recovery current-validated per Figure 15 test circuit in DS11941.

Can STF8N90K5 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, every unit is 100% production-tested for single-pulse avalanche with 250 mJ energy at T_J = 25 °C (ID = 2.7 A, V_DD = 50 V), per Table 3. Repetitive avalanche is limited to 2.7 A and must respect SOA boundaries shown in Figure 1.

Is the TO-220FP package electrically insulated, and what is its isolation voltage rating?

Yes, the TO-220FP (Type B) package provides reinforced electrical insulation between all three leads and the external heatsink, rated at 2.5 kV RMS for 1 second at T_C = 25 °C (Table 1, V_ISO). This eliminates need for insulating pads in many Class I safety designs.