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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF9N60M2

Name: STF9N60M2
Brand: STMicroelectronics
SKU: STF9N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF9N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF9N60M2.pdf

Description:: MOSFET N-CH 600V 5.5A TO220FP

Quantity:: RFQ Add To RFQ list

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Inventory:1,972

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Product details

Overview

STF9N60M2 from STMicroelectronics is an N-channel 600 V, 5.5 A Power MOSFET in TO-220FP package, fabricated with MDmesh M2 technology. It delivers 720 mΩ typical R_DS(on), 10 nC total gate charge, and 18 pF output capacitance (C_oss), enabling high-efficiency hard-switching in offline SMPS and PFC stages.

For engineers reviewing the STF9N60M2 datasheet, STF9N60M2 pinout, STF9N60M2 application, or STF9N60M2 equivalent, key selection criteria include avalanche ruggedness (105 mJ E_AS), Zener-protected gate, 2.5 kV isolation rating, and optimized C_oss profile for reduced switching loss in continuous conduction mode converters.

Technical Context

This device employs a strip-based MDmesh M2 vertical structure to minimize R_DS(on) while maintaining high voltage blocking capability. Its low Q_gd/Q_gs ratio (5.1 nC / 2 nC) and 50 V/ns MOSFET dv/dt ruggedness support stable operation under fast transient conditions in bridge-leg configurations.

The integrated body diode exhibits 265 ns reverse recovery time at 25 °C and 377 ns at 150 °C, with 1.65–2.3 µC Q_rr, making it suitable for discontinuous-mode flyback and resonant LLC topologies where diode softness impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal-input AC-DC designs up to 400 V DC bus with margin
R_DS(on) max	780 mΩ - enables low conduction loss at 5.5 A continuous drain current (T_C = 25 °C)
Q_g	10 nC - reduces gate drive power and allows use of smaller, lower-cost drivers
C_oss	18 pF - minimizes capacitive turn-off loss and improves zero-voltage switching (ZVS) feasibility
E_AS	105 mJ - ensures robust unclamped inductive switching in PFC and motor control without external snubbers
V_ISO	2.5 kV RMS - provides reinforced insulation between leads and heatsink for Class II safety compliance
T_J range	−55 to 150 °C - supports operation in sealed industrial enclosures and automotive under-hood environments

Pinout & Package

TO-220FP (Full-Pak) package with insulated tab: thermally conductive but electrically isolated case (pin 2 D connected to tab). Mounts directly to heatsink without insulator washer, reducing thermal resistance and assembly cost.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Control terminal; accepts 10 V logic-level drive; Zener-protected ±25 V rating prevents ESD damage
D (Pin 2)	Drain	High-side switch node; connected to insulated metal tab for direct heatsink mounting
S (Pin 3)	Source	Power return path; referenced to driver ground; carries full load current and diode recovery current

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × area product by 30% vs prior-generation 600 V MOSFETs, improving power density
Optimized C_oss profile	C_oss remains stable across 0–480 V, enabling predictable soft-switching behavior in LLC resonant converters
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 105 mJ, eliminating need for system-level derating
Zener-protected gate	Integrated 25 V gate-body clamp eliminates external TVS requirement in noisy industrial gate-drive layouts

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: 1–3 kW telecom/server power supplies operating in continuous conduction mode (CCM) with active clamp or LLC topology.

IC Role / Device Role: High-side main switch handling 400 V DC bus and 5–6 A peak current at 100–300 kHz.

Use Value: Low Q_g and stable C_oss reduce driver losses and improve ZVS window, increasing full-load efficiency by ≥0.4% over legacy 600 V MOSFETs.

Use Scenario: Three-phase industrial motor drives with front-end boost PFC stage requiring >98% efficiency at 10 kW.

IC Role / Device Role: Fast-recovery boost switch subjected to high di/dt and repetitive avalanche stress during line transients.

Use Value: 105 mJ E_AS and 50 V/ns dv/dt ruggedness eliminate need for external clamping, simplifying BOM and layout.

LED Streetlight Driver

EV Onboard Charger (OBC) Input Stage

Use Scenario: Outdoor-rated 150–250 W LED drivers with universal AC input and passive cooling constraints.

IC Role / Device Role: Flyback primary switch operating at 65–130 kHz with high duty cycle and ambient up to 85 °C.

Use Value: R_thJC = 6.25 °C/W and 150 °C T_J rating allow full 5.5 A current derating only to 3.6 A at 100 °C case, sustaining output power without forced air.

Use Scenario: Bidirectional OBC AC/DC stage converting 230 V AC to 400 V DC, subject to grid surges and frequent thermal cycling.

IC Role / Device Role: Bridge-leg switch exposed to 2.5 kV isolation stress and 100 µs surge events per IEC 61000-4-5.

Use Value: 2.5 kV V_ISO and −55 to 150 °C T_stg/T_J ensure long-term reliability in automotive underhood environments with no creepage rework.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9N60M2	Same die, TO-220 (non-isolated tab); R_thJC = 6.25 °C/W identical, but requires insulating washer	Lacks 2.5 kV isolation; unsuitable for double-insulated or medical-grade systems	Select when heatsink isolation is handled externally and cost reduction is critical
IPP60R099C7	99 mΩ R_DS(on) at 600 V, but higher C_oss (42 pF) and Q_g (34 nC); CoolMOS C7 process	Better conduction loss at <2 A, but higher switching loss above 100 kHz due to C_oss nonlinearity	Select for low-frequency, high-current PFC; avoid in high-frequency LLC where C_oss stability matters

Compared with STP9N60M2, STF9N60M2 adds reinforced isolation without thermal penalty; versus IPP60R099C7, it trades conduction efficiency for superior switching consistency and avalanche margin in mid-power SMPS.

Availability

STF9N60M2 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, outdoor LED drivers, and EV onboard charger input stages requiring stable component supply and long-lifecycle support.

Supply support for STF9N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh M2 series targets high-efficiency, high-reliability power conversion-specifically engineered for 600–650 V hard-switched and resonant topologies where R_DS(on), C_oss, and avalanche robustness must co-optimize.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF9N60M2 supports 3.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9709 Rev 3. This derating reflects thermal limits of the TO-220FP package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does the device include an integrated body diode, and what are its recovery characteristics?

Yes, STF9N60M2 features a monolithic N-channel MOSFET body diode with 265 ns reverse recovery time (t_rr) and 1.65 µC reverse recovery charge (Q_rr) at 25 °C, rising to 377 ns and 2.3 µC at 150 °C. These values are measured under standardized inductive-load conditions (I_SD = 5.5 A, di/dt = 100 A/µs, V_DD = 60 V).

Can STF9N60M2 be used in place of STP9N60M2 without board redesign?

No-although both share identical die and electrical specs, STF9N60M2 uses a TO-220FP package with electrically insulated tab, whereas STP9N60M2 uses standard TO-220 with conductive tab. Mechanical mounting and isolation requirements differ; replacing one with the other requires verification of creepage/clearance and heatsink isolation strategy.

What is the significance of the "M2" suffix in the part number?

The "M2" denotes STMicroelectronics' second-generation MDmesh (Multi-Die mesh) superjunction technology, which improves on first-gen M1 with enhanced cell pitch control, reduced specific on-resistance (R_sp), and flatter C_oss vs. V_DS curve-key for consistent soft-switching performance across wide input voltage ranges.

STF9N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 780mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 20W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF9N60M2 FAQ

1.How can I place an order for STF9N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF9N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF9N60M2 reliable?

The price and inventory of STF9N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF9N60M2 is usually 5 days.

3.What payment methods are accepted for STF9N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF9N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF9N60M2?

STF9N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF9N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF9N60M2?

For technical support, including STF9N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF9N60M2 requirements.

6.How does Aetrix verify that STF9N60M2 is sourced from the original manufacturer or authorized distributors?

All STF9N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF9N60M2 meets industry standards.

7.What is the process for return or replacement of STF9N60M2?

All STF9N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STF9N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF9N60M2 part is unused and in its original packaging.

Return procedure for STF9N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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