STMicroelectronics STF9NM60N

Overview

STF9NM60N from STMicroelectronics is a 600 V, 6.5 A N-channel Power MOSFET in TO-220FP package, built on MDmesh™ II technology for high-efficiency switching converters. It delivers 0.63 Ω typ. R_DS(on), 17.4 nC total gate charge, and 100% avalanche tested ruggedness-enabling reliable operation in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STF9NM60N datasheet, STF9NM60N pinout, STF9NM60N application, or STF9NM60N equivalent, key selection criteria include its 25 W thermal dissipation at T_C = 25 °C, 15 V/ns dv/dt immunity, and low 4.8 Ω gate input resistance-critical for fast-switching, high-voltage flyback and half-bridge topologies.

Technical Context

This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 452 pF input capacitance (C_iss) and 9.7 nC gate-drain charge (Q_gd) support clean voltage transitions under high di/dt conditions up to 400 A/μs.

The integrated body diode exhibits 264 ns reverse recovery time (t_rr) and 1.9 μC Q_rr at I_SD = 6.5 A, enabling efficient hard-switched operation without external snubbers in 50–100 kHz power supplies.

Key Specifications

Pinout & Package

TO-220FP package: insulated plastic case with integral heat sink tab; no electrical isolation between drain and tab-requires non-conductive mounting hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Compared with STP9NM60N, STF9NM60N trades 2.8× lower thermal resistance for 2.8× smaller footprint and insulation; versus FQP9N60CTM, it adds guaranteed avalanche ruggedness at cost of 10% higher Q_g, making it preferred for reliability-critical industrial SMPS.

Availability

STF9NM60N is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial PFC modules, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STF9NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STF9NM60N belongs to the MDmesh™ II Power MOSFET product line-engineered specifically for high-efficiency, high-voltage switching power supplies where low R_DS(on) × Q_g and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF9NM60N supports 4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6986 Rev 2. This derating reflects thermal limits of the TO-220FP package's 5 °C/W junction-to-case resistance and ensures safe operation below 150 °C maximum junction temperature.

Is the metal tab electrically isolated from the drain pin?

No-the metal tab in the TO-220FP package is internally connected to the drain (Pin 2). Electrical isolation from heatsink or chassis must be achieved using insulating pads or shoulder washers; direct mounting creates a short between drain and ground unless properly isolated.

Does STF9NM60N require a gate resistor for stability?

A gate resistor is recommended despite the device's 4.8 Ω intrinsic gate resistance. A 10–22 Ω external resistor controls dv/dt-induced Miller turn-on, dampens ringing from PCB trace inductance, and ensures predictable switching timing-especially in high-noise industrial environments.

Can STF9NM60N replace STD9NM60N in a DPAK-based design?

No-STF9NM60N uses TO-220FP packaging with different pinout (G-D-S), thermal interface, and PCB footprint versus STD9NM60N's DPAK (G-S-D) layout. Direct replacement requires board redesign, thermal analysis, and gate drive adjustment due to differing R_thj-case (5 vs. 1.79 °C/W) and package capacitance.