STMicroelectronics STFH10N60M2

Overview

STFH10N60M2 from STMicroelectronics is an N-channel 600 V, 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package, featuring 0.60 Ω max R_DS(on), 13.5 nC total gate charge, and 2500 V_RMS insulation withstand voltage. It delivers low conduction loss and optimized switching performance for high-efficiency resonant converters operating in harsh industrial environments.

For engineers reviewing the STFH10N60M2 datasheet, STFH10N60M2 pinout, STFH10N60M2 application, or STFH10N60M2 equivalent, key selection criteria include avalanche ruggedness (110 mJ E_AS), COSS profile (22 pF typ.), dv/dt capability (50 V/ns), and wide creepage (4.25 mm) for pollution degree III compliance.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) while maintaining robust switching behavior. Its Zener-protected gate and 100% avalanche-tested construction ensure reliability under transient overvoltage and unclamped inductive switching stress.

The device operates with V_GS(th) of 2–4 V and supports gate drive at 10 V for full enhancement. Its C_oss = 22 pF and C_rss = 0.84 pF enable fast, low-loss turn-off in LLC topologies, while R_thJC = 5 °C/W facilitates thermal management in compact power stages.

Key Specifications

Pinout & Package

TO-220FP wide creepage package with insulated backside and 4.25 mm minimum creepage distance between leads. Designed for direct mounting to external heat sinks without insulating pads in pollution degree III environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW10N60M2, STFH10N60M2 trades package thermal performance for certified insulation integrity; versus IPP60R099C7, it offers superior avalanche ruggedness and system-level safety certification at the cost of higher conduction loss above 5 A.

Availability

STFH10N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial AC-DC power supplies, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and compliance with reinforced insulation standards.

Supply support for STFH10N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency resonant and hard-switched SMPS topologies demanding low R_DS(on), low gate charge, and robust avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFH10N60M2 supports 4.9 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11690 Rev 5. This derating reflects thermal limitations of the TO-220FP wide creepage package, not silicon capability. Operation above this requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C.

Does the device include integrated gate protection?

Yes - the STFH10N60M2 integrates a Zener diode between gate and source, clamping gate-source voltage to ±25 V. This eliminates the need for external gate protection components in most applications, provided external gate drive circuitry complies with the ±25 V absolute maximum rating.

Can STFH10N60M2 be used in place of STP10NK60Z in existing designs?

No - although both are 600 V N-channel MOSFETs, STFH10N60M2 uses MDmesh M2 technology with lower R_DS(on) (0.60 Ω vs. 0.75 Ω) and significantly lower Q_g (13.5 nC vs. 35 nC), altering gate drive requirements and switching behavior. Layout and driver tuning are required for substitution.

What is the meaning of "wide creepage" in the TO-220FP package designation?

"Wide creepage" refers to the 4.25 mm minimum surface distance between adjacent leads (D–G and G–S), exceeding standard TO-220FP (typically 2.5 mm). This enables reinforced insulation per IEC 62368-1 and IEC 60950-1 in polluted environments without additional conformal coating or spacing on the PCB.