STMicroelectronics STFH18N60M2

Overview

STFH18N60M2 from STMicroelectronics is an N-channel 600 V, 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package, featuring 0.255 Ω typical R_DS(on), 21.5 nC total gate charge, and 100% avalanche tested ruggedness. It delivers low conduction loss and optimized switching performance for high-efficiency resonant and LCC converters operating in polluted or high-humidity environments.

For engineers reviewing the STFH18N60M2 datasheet, STFH18N60M2 pinout, STFH18N60M2 application, or STFH18N60M2 equivalent, key selection criteria include its 4.25 mm creepage distance, 2.5 kV insulation withstand voltage, Zener-protected gate, and COSS profile optimized for soft-switching topologies.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) (0.255 Ω typ.) while maintaining robust dv/dt ruggedness (50 V/ns) and low output capacitance (C_oss = 40 pF typ., C_oss,eq = 164.5 pF). Its 13 A continuous drain current at T_C = 25 °C and 8 A at 100 °C supports thermally constrained power stages.

The device integrates a fast-recovery body diode (t_rr = 305 ns at T_j = 25 °C, Q_rr = 3.3 µC) and is rated for unclamped inductive switching with E_AS = 135 mJ, enabling reliable operation in hard- and soft-switched SMPS without external snubbers.

Key Specifications

Pinout & Package

TO-220FP wide creepage package with 4.25 mm minimum creepage distance between pins and insulated backside mounting surface; designed for direct heatsink mounting without insulating pads in pollution degree 3 environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N60DM2 and IPP60R099C7, STFH18N60M2 uniquely balances creepage safety, avalanche ruggedness, and Zener gate protection-making it optimal for cost-sensitive, space-constrained industrial converters where reliability under pollution and transient stress is non-negotiable.

Availability

STFH18N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial AC-DC front-ends, and high-voltage DC-DC isolated converters requiring stable component supply, long-term lifecycle assurance, and compliance with reinforced insulation standards.

Supply support for STFH18N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STFH18N60M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability resonant and soft-switching power supplies operating at 100–500 kHz in harsh environmental conditions.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFH18N60M2 supports 8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11693 Rev 3. This rating reflects thermal derating due to junction-to-case thermal resistance (5 °C/W) and maximum junction temperature limit (150 °C), ensuring safe operation in convection-cooled industrial enclosures.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 13), and ST recommends 4.7–10 Ω for EMI control and ringing suppression. The intrinsic gate resistance is 5.6 Ω, so external series resistance helps dampen gate oscillation and manage dv/dt-induced Miller turn-on in half-bridge configurations.

Can STFH18N60M2 be used in place of STP18N60M2?

No-STP18N60M2 uses the standard TO-220 package without wide creepage or insulated tab, and has lower insulation rating (no V_ISO spec). STFH18N60M2's 4.25 mm creepage and 2.5 kV RMS isolation make it unsuitable as a drop-in replacement where mechanical clearance or safety certification differs; board layout and heatsink isolation must be revalidated.

What is the significance of the "M2" suffix in the part number?

The "M2" denotes ST's second-generation MDmesh (Multi-Die mesh) technology, featuring refined trench geometry and optimized drift region doping to reduce R_DS(on) × area while maintaining high V_DSS and low gate charge. It succeeds M1 and precedes M5/M6 generations, targeting 100–300 kHz resonant and PFC applications.