Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFH24N60M2

Name: STFH24N60M2
Brand: STMicroelectronics
SKU: STFH24N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STFH24N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STFH24N60M2.pdf

Description:: MOSFET N-CH 600V 18A TO220FP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:661

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STFH24N60M2 from STMicroelectronics is an N-channel 600 V, 18 A MDmesh™ M2 Power MOSFET in TO-220FP wide creepage package, featuring 0.168 Ω typ. R_DS(on), 29 nC total gate charge, and 2500 V RMS insulation withstand voltage. It serves as a high-voltage switching device in resonant LLC converters operating at high efficiency and reliability under polluted environmental conditions.

For engineers reviewing the STFH24N60M2 datasheet, STFH24N60M2 pinout, STFH24N60M2 application, or STFH24N60M2 equivalent, key selection criteria include avalanche ruggedness (180 mJ E_AS), low C_oss,eq (258 pF), dv/dt immunity (50 V/ns), and Zener-protected gate for robust gate drive design.

Technical Context

This MOSFET employs ST's MDmesh™ M2 silicon technology with strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching loss. Its low Q_gd/Q_g ratio (12/29 nC) and flat C_oss profile support zero-voltage switching (ZVS) in high-frequency resonant topologies.

The TO-220FP wide creepage package provides 4.25 mm minimum creepage distance between pins and 2500 V RMS isolation from leads to heatsink - critical for industrial power supplies operating in humid or dusty environments where surface arcing must be prevented.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage
R_DS(on) typ.	0.168 Ω @ V_GS = 10 V, I_D = 9 A - enables <1.5 W conduction loss at 12 A continuous drain current
Q_g total	29 nC - reduces gate driver power requirement and enables >200 kHz operation with standard 1-A drivers
C_oss,eq	258 pF @ 0–480 V - ensures predictable turn-off energy and stable ZVS boundary in LLC converters
E_AS	180 mJ - guarantees unclamped inductive switching survival without external snubbers
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during fast voltage transients in high-side configurations
T_j max	150 °C - allows full 18 A rating at T_C = 25 °C with derating to 12 A at T_C = 100 °C

Pinout & Package

TO-220FP wide creepage package with insulated backside, 4.25 mm minimum creepage between pins, and integral mounting hole. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (standard D-G-S configuration with tab connected to Drain).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Low-impedance control input requiring ≤29 nC charge for full enhancement; Zener-protected to ±25 V
Pin 2 (D)	Drain terminal / Heatsink connection	Electrically connected to metal tab; carries full 600 V blocking and 72 A pulsed current; requires isolation from PCB ground plane
Pin 3 (S)	Source terminal	Reference node for gate drive; carries return current of 18 A continuous; forms source-drain diode anode

Key Features

Feature	Design Value
MDmesh™ M2 silicon process	Enables 0.168 Ω R_DS(on) at 600 V while maintaining low Q_g and soft-recovery body diode
Wide creepage TO-220FP package	4.25 mm pin-to-pin creepage + 2500 V RMS isolation enables use in IP65-rated industrial enclosures without conformal coating
100% avalanche tested	Each unit validated for 3.5 A repetitive avalanche current and 180 mJ single-pulse energy - no screening failures
Zener-protected gate	Integrated gate-body Zener clamps transients to ±25 V, eliminating need for external gate protection components
Optimized C_oss profile	C_oss,eq = 258 pF over 0–480 V range ensures consistent turn-off timing and reduced voltage overshoot in hard-switched PFC stages

Applications

Industrial AC-DC Power Supplies

LLC Resonant DC-DC Converters

Use Scenario: 1 kW front-end rectifier stage with active PFC followed by isolated LLC stage in telecom rectifiers.

IC Role / Device Role / Timing Role: High-side primary switch in LLC half-bridge, operating at 200–500 kHz with ZVS.

Use Value: Low C_oss,eq and soft-recovery body diode minimize dead-time losses and enable reliable ZVS across full load range.

Use Scenario: Secondary-side synchronous rectification in server PSU output stage using discrete MOSFETs.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diodes in 12 V/200 A output rail.

Use Value: 0.168 Ω R_DS(on) cuts conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency by 0.8%.

UPS Inverter Stages

Motor Drive Half-Bridge Legs

Use Scenario: 3 kVA online UPS with bidirectional DC-link and transformer-isolated output inverter.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling 18 A RMS with 72 A peak surge capability.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during fast IGBT/MOSFET commutation in noisy motor drive environments.

Use Scenario: 7.5 kW HVAC compressor inverter with field-oriented control and regenerative braking.

IC Role / Device Role / Timing Role: High-voltage bridge arm switch sustaining 600 V DC link and conducting 12 A continuous motor current.

Use Value: 150 °C max junction temperature and 4.2 °C/W R_thj-case allow direct heatsink mounting without thermal interface pads in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N60M2	Same MDmesh™ M2 die, but TO-247 package; R_DS(on) = 0.195 Ω; higher thermal resistance (0.45 °C/W vs 4.2 °C/W case-to-heatsink)	Preferred for >3 kW designs requiring higher power density and forced-air cooling	Select when board space permits larger TO-247 and thermal management includes heatsink finning
FDPF18N60NZ	600 V, 18 A SuperFET II; R_DS(on) = 0.19 Ω; Q_g = 32 nC; no integrated Zener protection	Suitable for cost-sensitive consumer PSUs with simpler gate drive and lower reliability requirements	Choose only if Zener gate protection and 2500 V isolation are not required for end-equipment certification

Compared with STW20N60M2 and FDPF18N60NZ, STFH24N60M2 uniquely combines wide-creepage isolation, Zener gate protection, and MDmesh™ M2 switching performance in a compact through-hole package - making it optimal for space-constrained, safety-critical industrial power modules.

Availability

STFH24N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LLC resonant converters, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and certified isolation performance.

Supply support for STFH24N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh™ M2 product line targets high-efficiency, high-voltage power conversion systems - specifically engineered for LLC, PFC, and resonant topologies demanding low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

Is STFH24N60M2 suitable for hard-switched PFC applications?

Yes - its 50 V/ns dv/dt ruggedness, 600 V V_DS, and low Q_gd/Q_g ratio make it viable for continuous-conduction-mode (CCM) PFC. However, its body diode trr (332 ns) is slower than dedicated PFC MOSFETs; for >100 kHz designs, consider pairing with a SiC diode or selecting a part with faster recovery.

What is the maximum recommended gate resistor value for 300 kHz LLC operation?

With Q_g = 29 nC and typical 1-A peak gate driver capability, R_G ≤ 10 Ω ensures <30 ns effective turn-on delay. For 300 kHz ZVS, use R_G = 4.7 Ω (as tested in datasheet Figure 14) to balance switching speed against ringing and EMI - verified up to 500 kHz in reference designs.

Does the TO-220FP wide creepage package require special PCB layout rules?

Yes - maintain ≥4.5 mm clearance between Drain (tab) and any adjacent copper, and ≥5 mm creepage along solder mask edges. Use isolated thermal pads with ≥2500 V dielectric strength; avoid routing signal traces under the tab. ST recommends FR4 with ≥6.5 mm thickness for reinforced insulation per IEC 62368-1.

Can STFH24N60M2 replace STP20NM60FD in existing designs?

No - STP20NM60FD is a SuperMESH™ device with different gate threshold (3–5 V vs 2–4 V), higher R_DS(on) (0.22 Ω), and no Zener protection. While both are 600 V/20 A, STFH24N60M2's lower Q_g and improved C_oss profile demand gate drive redesign; direct replacement may cause shoot-through or insufficient drive margin.

STFH24N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STFH24N60M2 FAQ

1.How can I place an order for STFH24N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFH24N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFH24N60M2 reliable?

The price and inventory of STFH24N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFH24N60M2 is usually 5 days.

3.What payment methods are accepted for STFH24N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFH24N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFH24N60M2?

STFH24N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFH24N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFH24N60M2?

For technical support, including STFH24N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFH24N60M2 requirements.

6.How does Aetrix verify that STFH24N60M2 is sourced from the original manufacturer or authorized distributors?

All STFH24N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFH24N60M2 meets industry standards.

7.What is the process for return or replacement of STFH24N60M2?

All STFH24N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFH24N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFH24N60M2 part is unused and in its original packaging.

Return procedure for STFH24N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…