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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI10N62K3

Name: STFI10N62K3
Brand: STMicroelectronics
SKU: STFI10N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI10N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI10N62K3.pdf

Description:: MOSFET N CH 620V 8.4A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:1,495

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Product details

Overview

STF10N62K3 from STMicroelectronics is an N-channel 620 V, 700 mΩ typ., 8.4 A MDmesh K3 Power MOSFET in TO-220FP package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It features 100% avalanche tested ruggedness, 12 V/ns dv/dt capability, and Zener-protected gate.

For engineers reviewing the STF10N62K3 datasheet, STF10N62K3 pinout, STF10N62K3 application, or STF10N62K3 equivalent, this page delivers verified electrical specs, thermal data, diode recovery metrics, safe operating area limits, and real-world switching performance for high-reliability power conversion design.

Technical Context

This MOSFET employs ST's MDmesh K3 vertical structure with optimized charge balancing, enabling ultra-low R_DS(on) while maintaining high breakdown voltage and fast dynamic response. Its low C_iss (1250 pF), C_oss (138 pF), and Crss (16 pF) reduce switching losses in hard-switched topologies.

The integrated source-drain diode exhibits improved reverse recovery with t_rr = 320 ns (T_J = 25 °C) and Q_rr = 2 µC, supporting ZVS-capable designs. The device is rated for 220 mJ single-pulse avalanche energy at T_J = 25 °C and operates up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - Supports universal-input offline converters up to 400 V DC bus with margin
R_DS(on) max	750 mΩ - Enables low conduction loss at 8.4 A continuous drain current (T_C = 25 °C)
Q_g	42 nC - Determines gate drive power requirement and switching speed in 100–500 kHz applications
E_AS	220 mJ - Confirmed unclamped inductive switching robustness without external snubbers
t_r/t_f	15 ns / 31 ns - Fast edge rates support high-frequency operation with reduced overlap loss
V_GS(th)	3.75 V typ. - Ensures reliable turn-on with standard 5 V or 10 V gate drivers
R_thJC	4.17 °C/W - Defines thermal path efficiency from junction to case for heatsink sizing

Pinout & Package

TO-220FP package: insulated plastic case with integral heatsink tab, 3-pin through-hole mounting, creepage/clearance optimized for 2.5 kV RMS isolation between leads and heat sink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤ ±30 V bias; Zener-protected against ESD (2.5 kV HBM)
2 (D)	Drain	High-voltage output node; connected to heatsink tab electrically in TO-220FP type B
3 (S)	Source	Power return path; referenced to driver ground; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching without derating
Extremely high dv/dt capability	12 V/ns rating prevents spurious turn-on in noisy high-dV/dt environments
Very low intrinsic capacitance	C_iss/C_oss/C_rss values minimize capacitive losses and EMI generation
Improved diode reverse recovery	t_rr = 320 ns and Q_rr = 2 µC reduce diode-induced switching loss and voltage overshoot
Zener-protected gate	Integrated gate-body Zener clamps transients to ±20 V, eliminating external protection components

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 1–3 kW server power supply operating at 100–300 kHz with universal AC input.

IC Role / Device Role / Timing Role: Main switch in LLC resonant half-bridge primary side, handling 620 V DC link and 8.4 A peak current.

Use Value: Low R_DS(on) and fast switching reduce conduction + switching losses; avalanche rating ensures reliability during line surges.

Use Scenario: Active boost PFC stage in factory automation drives requiring >98% efficiency and THD <5%.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, switching at 65–133 kHz.

Use Value: Optimized C_rss and Q_g enable clean zero-voltage switching transitions; low Q_rr minimizes diode commutation loss.

Solar Microinverter DC-DC Stage

EV Onboard Charger HV Isolation Stage

Use Scenario: DC-DC isolated boost converter in residential solar microinverters interfacing 30–60 V PV strings to 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-clamp forward topology, operating at 150–250 kHz.

Use Value: 2.5 kV isolation rating allows direct mounting to chassis; low C_oss enables efficient soft-switching behavior.

Use Scenario: High-voltage isolation barrier in 3.3–6.6 kW bidirectional OBCs converting AC grid to 400/800 V battery.

IC Role / Device Role / Timing Role: Primary switch in dual-active-bridge (DAB) or phase-shifted full-bridge topology.

Use Value: 150 °C max junction temperature and 4.17 °C/W R_thJC support compact heatsinking in space-constrained automotive enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10N62K3	Same die, TO-220 (non-isolated) package; R_thJC = 3.3 °C/W; no 2.5 kV isolation rating	Requires external insulator for heatsink mounting; unsuitable where creepage/clearance mandates isolation	Select when cost-sensitive and mechanical isolation is handled externally
IPP60R190C7	600 V, 190 mΩ, 21 A; CoolMOS C7 technology; lower R_DS(on) but higher Q_g (62 nC)	Better conduction loss at high current; slower switching due to higher gate charge	Select for higher-current, lower-frequency (<100 kHz) applications prioritizing efficiency over speed

Compared with STP10N62K3, STF10N62K3 trades slightly higher thermal resistance for certified isolation and simplified mounting; versus IPP60R190C7, it offers superior dv/dt immunity and lower Q_rr, making it preferable in fast-switching, high-noise industrial PFC and SMPS.

Availability

STF10N62K3 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverter DC-DC stages, and EV onboard charger isolation circuits requiring stable component supply and long-term manufacturability.

Supply support for STF10N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, power, and digital consumer markets.

The MDmesh K3 product line targets high-efficiency, high-reliability power conversion systems demanding rugged 600 V+ switching with minimal gate drive complexity and thermal footprint.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF10N62K3 supports 5.2 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6237 Rev 5. This derating reflects thermal limitations of the TO-220FP package and must be applied in thermal design calculations alongside R_thJC = 4.17 °C/W.

Does the device include internal gate protection?

Yes - the STF10N62K3 integrates a Zener diode between gate and source, providing ±20 V clamping and 2.5 kV human body model ESD protection. This eliminates the need for external gate protection components in most industrial and computing applications.

How does the source-drain diode performance compare to standard MOSFETs?

The STF10N62K3 features improved body diode characteristics: t_rr = 320 ns and Q_rr = 2 µC at T_J = 25 °C, with I_RRM = 13 A. These values are 30–40% better than legacy 600 V MOSFETs, reducing commutation loss and voltage spikes in hard-switched and quasi-resonant topologies.

Is the TO-220FP package rated for insulation from heatsink?

Yes - the TO-220FP type B package provides 2.5 kV RMS insulation withstand voltage from all three leads to an external heatsink (t = 1 s, T_C = 25 °C), per Table 1. This enables direct mounting to grounded metal chassis without additional insulating hardware in safety-critical power systems.

STFI10N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI10N62K3 FAQ

1.How can I place an order for STFI10N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI10N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI10N62K3 reliable?

The price and inventory of STFI10N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI10N62K3 is usually 5 days.

3.What payment methods are accepted for STFI10N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI10N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI10N62K3?

STFI10N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI10N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI10N62K3?

For technical support, including STFI10N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI10N62K3 requirements.

6.How does Aetrix verify that STFI10N62K3 is sourced from the original manufacturer or authorized distributors?

All STFI10N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI10N62K3 meets industry standards.

7.What is the process for return or replacement of STFI10N62K3?

All STFI10N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STFI10N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI10N62K3 part is unused and in its original packaging.

Return procedure for STFI10N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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