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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STFI13N60M2

Name: STFI13N60M2
Brand: STMicroelectronics
SKU: STFI13N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STFI13N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Full Pack, I2PAK

Datasheet:: STFI13N60M2.pdf

Description:: MOSFET N-CH 600V 11A I2PAKFP

Quantity:: RFQ Add To RFQ list

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Inventory:454

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Product details

Overview

STFI13N60M2 from STMicroelectronics is an N-channel 600 V, 350 mΩ (typ), 11 A MDmesh™ M2 Power MOSFET in TO-220FP package, designed for high-efficiency hard-switched and resonant converters. It features extremely low gate charge (17 nC), optimized COSS profile (32 pF), and 100% avalanche tested ruggedness (EAS = 125 mJ), enabling high-frequency operation in PFC and SMPS stages.

For engineers reviewing the STFI13N60M2 datasheet, STFI13N60M2 pinout, STFI13N60M2 application, or STFI13N60M2 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, Zener-protected gate, 2.5 kV isolation rating, and thermal resistance (RthJC = 5 °C/W) - critical for industrial power supplies and solar inverters requiring robust switching under transient stress.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance nonlinearity. Its Coss eq. of 120 pF (0–480 V) and low Crss (1.1 pF) minimize Miller effect and enable fast, controllable turn-off with minimal voltage overshoot.

The device integrates a Zener-protected gate (±25 V rating) and exhibits stable VGS(th) (2–4 V) and RDS(on) over temperature (1.7× increase at TJ = 150 °C). Its unclamped inductive switching capability (IAS = 2.8 A, EAS = 125 mJ) supports reliable operation in flyback and LLC topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	600 V - Supports 400 VAC input rectified systems with ≥20% safety margin for surge immunity.
RDS(on) max	380 mΩ - Enables <1.5 W conduction loss at 11 A DC, suitable for 150–300 W continuous power stages.
Qg	17 nC - Reduces gate drive power and enables use of low-current drivers (e.g., 1-A peak) at 100 kHz+.
EAS	125 mJ - Sustains single-pulse inductive energy without failure in PFC boost diodes or motor drive freewheeling.
RthJC	5 °C/W - Allows 25 W dissipation with ≤125 °C junction rise above 25 °C case, compatible with standard TO-220 heatsinks.
dv/dt ruggedness	50 V/ns - Prevents false turn-on during high-slew-rate commutation in half-bridge configurations.
VISO	2.5 kV RMS - Meets reinforced insulation requirements for AC/DC adapters and medical-grade isolated PSUs.

Pinout & Package

TO-220FP (Type B) package: insulated plastic case with integral heat sink tab; creepage/clearance compliant per IEC 60950; lead-free and RoHS-compliant (ECOPACK®).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; Zener-clamped to ±25 V; requires 10 V for full enhancement; low Qgs (2.5 nC) minimizes Miller plateau duration.
2 (D)	Drain	High-side switching node; connected to heat sink tab; rated for 600 V blocking and 2.5 kV isolation to heatsink.
3 (S)	Source	Power return path; referenced to driver ground; hosts body diode (VSD = 1.6 V @ 11 A) with trr = 297 ns (TJ = 25 °C).

Key Features

Feature	Design Value
MDmesh M2 technology	Combines ultra-low RDS(on) × area with flat Coss vs. VDS curve - reduces switching loss variation across operating voltage range.
Extremely low gate charge	Qg = 17 nC enables <100 ns turn-off delay (td(off) = 41 ns typ) and reduces driver IC stress in high-frequency PFC.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transients - eliminates need for external gate Zener in cost-sensitive designs.
100% avalanche tested	Each unit validated for EAS = 125 mJ - guarantees robustness in unclamped inductive switching without derating.
Optimized COSS profile	Coss = 32 pF @ 100 V, Coss eq. = 120 pF (0–480 V) - improves soft-switching efficiency in LLC and QR flyback converters.

Applications

Industrial Switch-Mode Power Supplies

Solar Microinverters

Use Scenario: Primary-side switch in 300–500 W active clamp forward or asymmetrical half-bridge converters.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 VDC bus with 100–200 kHz switching frequency.

Use Value: Low Qgd (9 nC) and 50 V/ns dv/dt ruggedness prevent spurious turn-on during cross-conduction, improving reliability in high-density layouts.

Use Scenario: DC-DC stage in microinverter power stage converting PV string voltage (30–60 V) to 400 VDC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in interleaved boost converter with bidirectional current capability.

Use Value: Body diode trr = 297 ns and low Qrr (2.8 µC) reduce reverse recovery losses and EMI generation during zero-voltage switching transitions.

Server PSU Front-End PFC

EV On-Board Charger (OBC) Auxiliary Supplies

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage operating at 65–100 kHz with 230 VAC input.

IC Role / Device Role / Timing Role: Main energy transfer switch managing 11 A RMS current and 600 V blocking duty.

Use Value: RthJC = 5 °C/W allows direct mounting to chassis with ≤25 W dissipation - simplifies thermal design versus discrete heatsink solutions.

Use Scenario: Isolated auxiliary supply switch in OBC control board powering gate drivers and MCU from 400 V battery rail.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback converter delivering 12 V/1 A with reinforced insulation.

Use Value: 2.5 kV RMS isolation rating meets IEC 62368-1 creepage requirements without additional barrier materials or spacing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF13N60M2	Identical die, same RDS(on), Qg, and avalanche rating; differs only in marking and packaging (tube vs. tape-and-reel); TO-220FP pinout identical.	No functional difference; used interchangeably in production where tube packaging is acceptable.	Select STF13N60M2 for manual assembly or low-volume prototyping; STFI13N60M2 preferred for automated pick-and-place due to FP package insulation.
IPP60R190C7	650 V, 190 mΩ, 13.5 A; CoolMOS™ C7; lower RDS(on) but higher Qg (32 nC); no integrated gate Zener; 1.5 kV isolation.	Better conduction loss at high current, but requires external gate protection and larger driver; unsuitable where 2.5 kV isolation is mandated.	Choose IPP60R190C7 only when RDS(on) reduction justifies added gate drive complexity and isolation derating.

Compared with STF13N60M2, STFI13N60M2 offers identical electrical performance with certified insulation - making it the sole choice for safety-critical isolated supplies. Versus IPP60R190C7, it trades 190 mΩ for proven ruggedness and integrated protection, favoring reliability over marginal efficiency gain.

Availability

STFI13N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar microinverters, server PSU front-end PFC, and EV on-board charger auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for STFI13N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

STFI13N60M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in industrial, computing, and renewable energy systems.

FAQ

Is STFI13N60M2 pin-compatible with STF13N60M2?

Yes - both share identical TO-220FP (Type B) mechanical outline and pin assignment (G-D-S). The STFI13N60M2 marking denotes the insulated variant; electrically and thermally, they are functionally identical. No PCB redesign is needed for substitution.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies ID = 7 A at TC = 100 °C (Table 1). This reflects thermal derating due to junction-to-case resistance (5 °C/W) and maximum TJ = 150 °C limit. At 100 °C case, 50 °C allowable ΔT permits 10 W dissipation, consistent with RDS(on) × I² calculation.

Does STFI13N60M2 require external gate protection?

No - it integrates a Zener diode between gate and source, rated for ±25 V. This protects against ESD and gate driver overshoot, eliminating the need for external clamping components in most applications unless extreme dv/dt (>50 V/ns) or high-energy transients are present.

Can STFI13N60M2 be used in synchronous rectification?

No - it is an N-channel high-side switch optimized for hard switching, not low-side synchronous rectification. Its body diode has relatively high VSD (1.6 V) and trr (297 ns), making it unsuitable for high-frequency SR where low forward drop and fast recovery are mandatory.

STFI13N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-262-3 Full Pack, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-281 (I2PAKFP)

STFI13N60M2 FAQ

1.How can I place an order for STFI13N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STFI13N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STFI13N60M2 reliable?

The price and inventory of STFI13N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STFI13N60M2 is usually 5 days.

3.What payment methods are accepted for STFI13N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STFI13N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STFI13N60M2?

STFI13N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STFI13N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STFI13N60M2?

For technical support, including STFI13N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STFI13N60M2 requirements.

6.How does Aetrix verify that STFI13N60M2 is sourced from the original manufacturer or authorized distributors?

All STFI13N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STFI13N60M2 meets industry standards.

7.What is the process for return or replacement of STFI13N60M2?

All STFI13N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STFI13N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STFI13N60M2 part is unused and in its original packaging.

Return procedure for STFI13N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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