STMicroelectronics STFI13N65M2

Overview

STF13N65M2 from STMicroelectronics is an N-channel 650 V, 10 A Power MOSFET in TO-220FP package, fabricated with MDmesh M2 technology. It delivers 370 mΩ typical R_DS(on), 17 nC total gate charge, and 27.5 pF output capacitance (C_oss), enabling high-efficiency hard-switching in offline SMPS and PFC stages.

For engineers reviewing the STF13N65M2 datasheet, STF13N65M2 pinout, STF13N65M2 application, or STF13N65M2 equivalent, key selection criteria include avalanche ruggedness (350 mJ E_AS), Zener-protected gate, 15 V/ns diode recovery dv/dt capability, and 2.5 kV isolation rating for heatsink mounting.

Technical Context

This device employs a strip-based vertical structure optimized for low conduction loss and fast switching. Its C_oss profile is engineered to minimize switching energy loss during turn-off, while the 1.1 pF Crss supports clean voltage transitions under high dv/dt conditions.

The integrated body diode exhibits 312 ns reverse recovery time at 25 °C and 464 ns at 150 °C, with 2.7 µC Q_rr (25 °C) - critical for reducing commutation losses in bridge-leg configurations and quasi-resonant topologies.

Key Specifications

Pinout & Package

TO-220FP (Type B) package: insulated flange, single in-line 3-pin configuration with vertical lead orientation and heat-transfer optimized tab. Flange electrically connected to drain (D).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF10N65M2, STF13N65M2 provides +25% current headroom without increasing gate drive demand; versus IPP65R430CFD7, it trades slightly higher Q_rr for guaranteed avalanche ruggedness and tighter C_oss control - critical for hard-switched PFC and UPS inverters.

Availability

STF13N65M2 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for STF13N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This part belongs to the MDmesh M2 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC conversion in telecom, server, and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STF13N65M2 supports 6.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10586 Rev 3. This derating reflects thermal limits of the TO-220FP package with R_thJC = 5 °C/W and junction-to-case power dissipation constraints.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic source-drain diode with 312 ns reverse recovery time (t_rr) and 2.7 µC reverse recovery charge (Q_rr) at 25 °C, measured under ISD = 10 A, di/dt = 100 A/µs, and VDD = 60 V per Figure 15 test circuit.

Can STF13N65M2 be used in place of STF13N60M2 in existing designs?

No - STF13N60M2 has 600 V V_DS rating and different R_DS(on) (380 mΩ typ.), gate charge (15 nC), and safe operating area. Substituting requires revalidation of voltage margin, avalanche energy, and thermal performance at 650 V operation.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes, STF13N65M2 is manufactured in ECOPACK2-compliant TO-220FP packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per ST's ECOPACK specifications published at www.st.com.