STMicroelectronics STFI13N80K5

Overview

STFI13N80K5 from STMicroelectronics is an N-channel 800 V, 12 A MDmesh™ K5 Power MOSFET in I²PAKFP (TO-281) package, featuring 0.45 Ω max R_DS(on), 29 nC total gate charge, and 2500 V_RMS insulation withstand voltage. It delivers ultra-low conduction and switching losses for high-efficiency HVAC inverters, industrial SMPS, and photovoltaic string inverters.

For engineers reviewing the STFI13N80K5 datasheet, STFI13N80K5 pinout, STFI13N80K5 application, or STFI13N80K5 equivalent, key selection criteria include avalanche ruggedness (148 mJ E_AS), Zener-protected gate-source junction (30 V breakdown), low-profile insulated package with extended creepage, and industry-leading FoM (R_DS(on) × Q_g = 13.05 Ω·nC).

Technical Context

This device implements ST's MDmesh™ K5 vertical superjunction architecture to achieve simultaneous reduction of R_DS(on) and gate charge-enabling higher power density in 800 V systems. Its fully insulated I²PAKFP package integrates a heatsink-mountable drain plate with 2500 V_RMS isolation between leads and external heatsink.

The built-in back-to-back Zener diodes provide intrinsic ESD protection (V_(BR)GSO = 30 V) and eliminate external clamping components. Avalanche capability is 100% tested (I_AR = 4 A, E_AS = 148 mJ at T_j = 25 °C), supporting robust unclamped inductive switching in motor drives and UPS systems.

Key Specifications

Pinout & Package

The STFI13N80K5 is housed in an I²PAKFP (TO-281) package: a fully insulated, low-profile variant of I²PAK with extended creepage distance and integrated heatsink-mountable drain plate. The package features three leads in a single-row configuration with internal thermal and electrical isolation between pins and heatsink surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW12N80K5, STFI13N80K5 trades 3% higher R_DS(on) for full insulation and 20% smaller footprint; versus IPP60R099C7, it provides native 800 V capability without series stacking, simplifying layout and improving reliability in high-altitude or high-humidity environments.

Availability

STFI13N80K5 is available at Aetrix Electronics and suitable for industrial SMPS, HVAC inverter stages, photovoltaic string inverters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STFI13N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh™ K5 product line targets high-efficiency, high-voltage power conversion systems-specifically engineered to replace older superjunction MOSFETs in 600–800 V applications with superior FoM, ruggedness, and ease of thermal integration.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STFI13N80K5 supports 7.6 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This value is limited by package thermal constraints-not silicon capability-and assumes proper heatsinking with R_thj-case ≤ 3.57 °C/W. Derating curves in Figure 2 confirm safe operation up to 10 ms pulses at 48 A.

Does the I²PAKFP package require an insulating pad when mounted to a heatsink?

No. The I²PAKFP package incorporates full electrical insulation between all three leads and the external heatsink-mounting surface, validated by 2500 V_RMS withstand voltage testing per IEC 60747-5-2. No additional insulating pad or sil-pad is required, reducing thermal resistance and assembly steps.

How does the integrated Zener diode protect the gate?

The gate-source junction includes back-to-back Zener diodes with 30 V breakdown voltage (V_(BR)GSO), clamping transient overvoltage before gate oxide damage occurs. This eliminates need for external TVS diodes in most applications and improves system-level ESD robustness per IEC 61000-4-2 Level 4 (±8 kV contact discharge).

Can STFI13N80K5 replace STP12N80 in existing designs?

Yes-with minor layout review. STFI13N80K5 offers lower R_DS(on) (0.45 Ω vs. 0.52 Ω), lower Q_g (29 nC vs. 45 nC), and integrated insulation. Pinout is identical (G-D-S), but I²PAKFP has different mechanical dimensions than TO-220FP. Thermal pad alignment and screw-hole placement must be verified; no changes to gate drive or biasing are needed.